SIA527DJ-T1-GE3

Name: Vishay - SIA527DJ-T1-GE3
Brand: Vishay
SKU: OMO-3518518
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SIA527DJ-T1-GE3
제조사:: Vishay
설명:: MOSFET N/P-CH 12V 4.5A SC-70-6
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SIA527DJ-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SIA527DJ-T1-GE3 추가 정보

제품 속성
속성 값

제조사: 비쉐이 실리콘

제품 카테고리: FET - 어레이

시리즈: 트렌치FETR

포장: Digi-ReelR 대체 패키징

단위 무게: 0.000988 oz

장착 스타일: SMD/SMT

상표명: TrenchFET

패키지 케이스: PowerPAKR SC-70-6 Dual

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 2 Channel

공급자-장치-패키지: PowerPAKR SC-70-6 Dual

구성: 1 N-Channel 1 P-Channel

FET형: N 및 P-채널

파워맥스: 7.8W

트랜지스터형: 1 N-Channel 1 P-Channel

드레인-소스 전압 Vdss: 12V

입력-커패시턴스-Ciss-Vds: 500pF @ 6V

FET 기능: 로직 레벨 게이트

Current-Continuous-Drain-Id-25°C: 4.5A

Rds-On-Max-Id-Vgs: 29 mOhm @ 5A, 4.5V

Vgs-th-Max-Id: 1V @ 250μA

Gate-Charge-Qg-Vgs: 15nC @ 8V

Pd 전력 손실: 7.8 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns

상승 시간: 10 ns

Vgs 게이트 소스 전압: + /- 8 V

Id-연속-드레인-전류: 4.5 A

Vds-드레인-소스-고장-전압: 12 V

Vgs-th-Gate-Source-Threshold-Voltage: 1 V - 1 V

Rds-On-Drain-Source-Resistance: 41 mOhms

트랜지스터 극성: N-채널 P-채널

일반 꺼짐 지연 시간: 22 ns

일반 켜기 지연 시간: 10 ns

Qg-Gate-Charge: 5.6 nC

채널 모드: 상승

Tags: SIA5, SIA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SIA527DJ-T1-GE3 설명

***et Europe: Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R

*** Americas: N- AND P-CHANNEL 12-V (D-S) MOSFET

***ark: N/P-Ch PPAK SC-70 12V 29/41mohms @ 4.5V

***ronik: N+P-MOS-FET 4,5A 12V PP-SC70-6

SIA527DJ-T1-GE3 추가 정보

Integrated MOSFET Solutions: Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance.

N & P Channel Pair Thermally Enhanced MOSFETs: Vishay N and P Channel Pair Thermally Enhanced MOSFETs combine the N-channel and P-channel MOSFET pairs into one single package. These N and P Channel MOSFETs are designed to minimize the ON-state Resistance (RDS(on)) while maintaining superior switching performance. In addition, combining both the N-channel and P-channel MOSFETs into a single IC saves PCB space and simplifies application design.

Market price

부분 #	제조	설명	재고	가격
SIA527DJ-T1-GE3 DISTI # V72:2272_09216728	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	4416	3000:$0.1770 1000:$0.2034 500:$0.2497 250:$0.2869 100:$0.3187 25:$0.4239 10:$0.4710 1:$0.6063
SIA527DJ-T1-GE3 DISTI # V36:1790_09216728	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	0	6000000:$0.1636 3000000:$0.1638 600000:$0.1750 60000:$0.1925 6000:$0.1953
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3CT-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	36100In Stock	1000:$0.2206 500:$0.2855 100:$0.3634 10:$0.4870 1:$0.5700
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	36100In Stock	1000:$0.2206 500:$0.2855 100:$0.3634 10:$0.4870 1:$0.5700
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3TR-ND	Vishay Siliconix	MOSFET N/P-CH 12V 4.5A SC-70-6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	33000In Stock	30000:$0.1613 15000:$0.1701 6000:$0.1827 3000:$0.1953
SIA527DJ-T1-GE3 DISTI # 27089799	Vishay Intertechnologies	Trans MOSFET N/P-CH Si 12V 4.5A 6-Pin PowerPAK SC-70 T/R RoHS: Compliant	4416	38:$0.6063
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R - Tape and Reel (Alt: SIA527DJ-T1-GE3) RoHS: Not Compliant Min Qty: 3000 Container: Reel	Americas - 12000
SIA527DJ-T1-GE3 DISTI # SIA527DJ-T1-GE3	Vishay Intertechnologies	Trans MOSFET N/P-CH 12V 4.5A/4.5A 6-Pin PowerPAK SC-70 T/R (Alt: SIA527DJ-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.1559 18000:€0.1669 12000:€0.1809 6000:€0.2109 3000:€0.3089
SIA527DJ-T1-GE3 DISTI # 67X6801	Vishay Intertechnologies	N- AND P-CHANNEL 12-V (D-S) MOSFET	0	50000:$0.1550 30000:$0.1620 20000:$0.1740 10000:$0.1860 5000:$0.2020 1:$0.2070
SIA527DJ-T1-GE3 DISTI # 78-SIA527DJ-T1-GE3	Vishay Intertechnologies	MOSFET -12V Vds 8V Vgs SC-70 N&P PAIR RoHS: Compliant	622	1:$0.5600 10:$0.4330 100:$0.3210 500:$0.2640 1000:$0.2040 3000:$0.1850 6000:$0.1730 9000:$0.1620

SIA527DJ-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes