BSC026N02KS

Mfr. #:: BSC026N02KS
제조사:: Infineon Technologies
설명:
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: BSC026N02KS 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사: 인피니언 테크놀로지스

제품 카테고리: FET - 단일

시리즈: 옵티모스

포장: Digi-ReelR 대체 패키징

부분 별칭: BSC026N02KSGAUMA1 BSC026N02KSGXT SP000379664

장착 스타일: SMD/SMT

상표명: 옵티모스

패키지 케이스: 8-PowerTDFN

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: PG-TDSON-8

구성: 싱글 쿼드 드레인 트리플 소스

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 78W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 20V

입력-커패시턴스-Ciss-Vds: 7800pF @ 10V

FET 기능: Logic Level Gate, 2.5V Drive

Current-Continuous-Drain-Id-25°C: 25A (Ta), 100A (Tc)

Rds-On-Max-Id-Vgs: 2.6 mOhm @ 50A, 4.5V

Vgs-th-Max-Id: 1.2V @ 200μA

Gate-Charge-Qg-Vgs: 52.7nC @ 4.5V

Pd 전력 손실: 2.8 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 9 ns

상승 시간: 115 ns

Vgs 게이트 소스 전압: 12 V

Id-연속-드레인-전류: 25 A

Vds-드레인-소스-고장-전압: 20 V

Rds-On-Drain-Source-Resistance: 2.6 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 52 ns

일반 켜기 지연 시간: 21 ns

채널 모드: 상승

Tags: BSC026N02, BSC026N0, BSC026, BSC02, BSC0, BSC

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

Market price

부분 #	제조	설명	재고	가격
BSC026N02KSGAUMA1 DISTI # V72:2272_06384322	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	4849	3000:$0.6278 1000:$0.6342 500:$0.7785 250:$0.8718 100:$0.8814 25:$1.0937 10:$1.1069 1:$1.2548
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	8909In Stock	1000:$0.8016 500:$1.0154 100:$1.3094 10:$1.6570 1:$1.8700
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	8909In Stock	1000:$0.8016 500:$1.0154 100:$1.3094 10:$1.6570 1:$1.8700
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 20V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR)	On Order	5000:$0.6901
BSC026N02KSGAUMA1 DISTI # 30701482	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	5000	10000:$0.5798 5000:$0.6029
BSC026N02KSGAUMA1 DISTI # 26195427	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON EP T/R RoHS: Compliant	4849	3000:$0.6278 1000:$0.6342 500:$0.7785 250:$0.8718 100:$0.8814 25:$1.0937 11:$1.1069
BSC026N02KSGAUMA1 DISTI # BSC026N02KSGAUMA1	Infineon Technologies AG	Trans MOSFET N-CH 20V 25A 8-Pin TDSON T/R - Tape and Reel (Alt: BSC026N02KSGAUMA1) RoHS: Compliant Min Qty: 5000 Container: Reel	Americas - 0	5000:$0.6789 10000:$0.6549 20000:$0.6309 30000:$0.6099 50000:$0.5989
BSC026N02KSGAUMA1 DISTI # 726-BSC026N02KSGAUMA	Infineon Technologies AG	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 RoHS: Compliant	2883	1:$1.5500 10:$1.3300 100:$1.0200 500:$0.8970 1000:$0.7080
BSC026N02KS G DISTI # 726-BSC026N02KSG	Infineon Technologies AG	MOSFET N-Ch 20V 100A TDSON-8 OptiMOS 2 RoHS: Compliant	7566	1:$1.3700 10:$1.1700 100:$0.8920 500:$0.7880
BSC026N02KSG	Infineon Technologies AG	Power Field-Effect Transistor, 25A I(D), 20V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	40500	1000:$0.5700 500:$0.6000 100:$0.6200 25:$0.6500 1:$0.7000
BSC026N02KSGAUMA1 DISTI # 7528154P	Infineon Technologies AG	MOSFET N-CHANNEL 20V 25A OPTIMOS2 TDSON8, RL	3490	50:£0.8500 250:£0.6650 1250:£0.4650 2500:£0.4400
BSC026N02KSGAUMA1 DISTI # 1775434	Infineon Technologies AG	MOSFET, N CH, 100A, 20V, PG-TDSON-8 RoHS: Compliant	0	1:$2.1700 10:$1.8500 100:$1.4100 500:$1.2500 1000:$0.9840 5000:$0.9840
BSC026N02KSGAUMA1 DISTI # C1S322000653078	Infineon Technologies AG	MOSFETs RoHS: Compliant	4849	250:$0.9013 100:$0.9038 25:$1.1116 10:$1.1161
BSC026N02KSGAUMA1 DISTI # C1S322000644539	Infineon Technologies AG	MOSFETs RoHS: Compliant	5000	5000:$0.6420

관련 상품

영상	부분 #	설명
	Mfr.#: BSC024NE2LS OMO.#: OMO-BSC024NE2LS	MOSFET N-Ch 25V 100A TDSON-8 OptiMOS
	Mfr.#: BSC020N025S G OMO.#: OMO-BSC020N025S-G-INFINEON-TECHNOLOGIES	MOSFET N-CH 25V 100A TDSON-8
	Mfr.#: BSC020N03LSG,1N4148W T/R OMO.#: OMO-BSC020N03LSG-1N4148W-T-R-1190	신규 및 오리지널
	Mfr.#: BSC022N03LSG OMO.#: OMO-BSC022N03LSG-1190	신규 및 오리지널
	Mfr.#: BSC022N03S 30V,50A,FD100 OMO.#: OMO-BSC022N03S-30V-50A-FD100-1190	신규 및 오리지널
	Mfr.#: BSC022N03S,MOSFET,30V,50 OMO.#: OMO-BSC022N03S-MOSFET-30V-50-1190	신규 및 오리지널
	Mfr.#: BSC025N03MS G OMO.#: OMO-BSC025N03MS-G-1190	Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP
	Mfr.#: BSC026N08NS5 OMO.#: OMO-BSC026N08NS5-1190	POWER FIELD-EFFECT TRANSISTOR, 23A I(D), 80V, 0.0026OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: BSC028N06LS3G OMO.#: OMO-BSC028N06LS3G-1190	23 A, 60 V, 0.0028 ohm, N-CHANNEL, Si, POWER, MOSFET
	Mfr.#: BSC028N06LS3GATMA1 OMO.#: OMO-BSC028N06LS3GATMA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 60V 100A TDSON-8

유효성

재고:: Available
주문 시:: 5000
수량 입력:

BSC026N02KS의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.00~~; ~~US$0.00~~

10: ~~US$0.00~~; ~~US$0.00~~

100: ~~US$0.00~~; ~~US$0.00~~

500: ~~US$0.00~~; ~~US$0.00~~

1000: ~~US$0.00~~; ~~US$0.00~~

시작

BSC026N02 4
BSC026N0 8
BSC026 11
BSC02 87
BSC0 601
BSC 999

BSC026N02KS

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes