IPD60R1K5CEAUMA1

Mfr. #:: IPD60R1K5CEAUMA1
제조사:: Infineon Technologies
설명:: MOSFET CONSUMER
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPD60R1K5CEAUMA1 데이터 시트
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추가 정보:: IPD60R1K5CEAUMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: TO-252-3

Vds - 드레인 소스 항복 전압:: 600 V

상표명:: 쿨모스

포장:: 릴

키:: 2.3 mm

길이:: 6.5 mm

시리즈:: 쿨모스 CE

너비:: 6.22 mm

상표:: 인피니언 테크놀로지스

습기에 민감한:: 네

상품 유형:: MOSFET

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

부품 번호 별칭:: IPD60R1K5CE SP001396902

단위 무게:: 0.011993 oz

Tags: IPD60R1K5, IPD60R1K, IPD60R1, IPD60R, IPD60, IPD6, IPD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPD60R1K5CEAUMA1 설명

***Yang: N-Channel 600 V 1.5 mOhm 9.4 nC CoolMOS™ CE Power Transistor - TO-252

***ark: Mosfet, N-Ch, 600V, 5A, To-252; Transistor Polarity:N Channel; Continuous Drain Current Id:5A; Drain Source Voltage Vds:600V; On Resistance Rds(On):1.26Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Dissipation Rohs Compliant: Yes |Infineon IPD60R1K5CEAUMA1

***icontronic: Power Field-Effect Transistor, 5A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***ure Electronics: Single N-Channel 600 V 500 Ohm 0.65 nC SIPMOS® Small Signal Mosfet - SOT-23

***ical: Trans MOSFET N-CH 600V 0.021A Automotive 3-Pin SOT-23 T/R

***ark: Mosfet, N-Ch, 600V, 0.021A, 0.5W; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:21Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Infineon BSS127H6327XTSA2

***ineon: All Small Signal n-channel products are suitable for automotive applications (excluding 2N7002). | Summary of Features: Enhancement mode; Avalanche rated; Pb-free lead plating; RoHS compliant; Qualified according to AEC Q101 | Target Applications: Automotive; Consumer; DC-DC; eMobility; Motor control; Onboard charger; Telecom

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 21 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 500 / Gate-Source Voltage V = 20 / Fall Time ns = 115 / Rise Time ns = 9.7 / Turn-OFF Delay Time ns = 14 / Turn-ON Delay Time ns = 6.1 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Automotive Qualification Standard = AEC-Q101 / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500

***ure Electronics: Single N-Channel 600 V 2.1 Ohm 6.7 nC CoolMOS Power Mosfet - SOT-223

***ical: Trans MOSFET N-CH 600V 3.7A 3-Pin(2+Tab) SOT-223 T/R

***ark: MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:3.7A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

***ineon: Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer

***nell: MOSFET, N-CH, 600V, 3.7A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.7A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.89ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ure Electronics: Single N-Channel 600 V 3.4 Ohm 4.6 nC CoolMOS Power Mosfet - SOT-223

***Yang: Trans MOSFET N-CH 650V 3.9A 3-Pin SOT-223 - Tape and Reel

***nell: MOSFET, N-CH, 600V, 2.6A, SOT-223-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 2.6A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 3.06ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 5W; Transistor Case Style: SOT-223; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: CoolMOS CE Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: Cost-effective drop-in replacement for DPAK | Summary of Features: Drop-in replacement for DPAK at lower cost; Space savings in designs with low power dissipation; Comparable thermal behavior to DPAK | Target Applications: Lighting; Adapter; Consumer

***icroelectronics: N-channel 600 V, 13 Ohm typ., 0.3 A Zener-protected SuperMESH Power MOSFET in SOT-223 package

***ure Electronics: N-Channel 600 V 15 Ohm 4.9 nC Surface Mount SuperMESH Power MosFet- SOT-223

***ical: Trans MOSFET N-CH 600V 0.3A 4-Pin(3+Tab) SOT-223 T/R

***ment14 APAC: Transistor, MOSFET; Transistor Polarity:N Channel; Continuous Drain Current Id:300mA; Source Voltage Vds:600V; On Resistance Rds(on):15ohm;

***trelec: Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) mA = 300 / Drain-Source Voltage (Vds) V = 600 / ON Resistance (Rds(on)) Ohm = 15 / Gate-Source Voltage V = 30 / Fall Time ns = 28 / Rise Time ns = 5 / Turn-OFF Delay Time ns = 13 / Turn-ON Delay Time ns = 5.5 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-223 / Pins = 4 / Mounting Type = SMD / Packaging = Tape & Reel / Power Dissipation (Pd) W = 3.3

***nell: TRANSISTOR, MOSFET; Transistor Polarity: N Channel; Continuous Drain Current Id: 300mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 15ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 2W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (17-Dec-2015); Current Id Max: 300mA; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Termination Type: Surface Mount Device; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

***ure Electronics: Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Silicon SMT Mosfet - SOT-23

***ical: Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SOT-23 T/R

***(Formerly Allied Electronics): N-Channel Enhancement MOSFET SOT-23 | Diodes Inc BSS127S-7

***nell: MOSFET, N-CH, 600V, 0.05A, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 50mA; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 80ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4.5V; Power Dissipation Pd: 610mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ark: Mosfet, N-Ch, 600V, 0.05A, Sc-59 Rohs Compliant: Yes |Diodes Inc. BSS127SSN-7

***ure Electronics: Single N-Channel 600 V 190 Ohm 1.08 nC 1.25 W Mosfet - SOT-23

***ical: Trans MOSFET N-CH 600V 0.07A Automotive 3-Pin SC-59 T/R

***des Inc SCT: N-CHANNEL ENHANCEMENT MODE FIELD MOSFET, 600V VDS, 20±V VGS,

***nsix Microsemi: Small Signal Field-Effect Transistor, 0.045A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***nell: MOSFET, N-CH, 600V, 0.05A, SC-59;

***S: French Electronic Distributor since 1988

IPD60R1K5CEAUMA1 추가 정보

CoolMOS™ Power Transistors: Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.

CoolMOS™ CE Power MOSFETs: Infineon's CoolMOS™ CE Power MOSFETs are a technology platform of high voltage power MOSFETs that are designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. CoolMOS™ CE portfolio offers 500V, 600V, 650V, 700V, and 800V devices targeting low power chargers for mobile devices and power tools, adapters for notebook and laptops, LCD, LED TV and LED lighting. This new series of CoolMOS™ is cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still being price attractive.

CoolMOS CE Power MOSFETs - 600-650V: Infineon 600V/650V CoolMOS™ CE N-Channel Power MOSFETs are a technology platform of Infineon's market leading high voltage power MOSFET designed according to the superjunction principle (SJ) and conceived to fulfill consumer requirements. These 600V/650V CoolMOS™ MOSFETs are cost optimized to meet typical requirements in consumer with no compromise on proven CoolMOS™ quality and reliability while still been price attractive. These devices target low power chargers for mobile devices and power tools, LCD, LED TV and LED lighting applications.

Market price

부분 #	제조	설명	재고	가격
IPD60R1K5CEAUMA1 DISTI # V36:1790_13982026	Infineon Technologies AG	Trans MOSFET N-CH 600V 5A T/R	0
IPD60R1K5CEAUMA1 DISTI # IPD60R1K5CEAUMA1CT-ND	Infineon Technologies AG	MOSFET N-CHANNEL 650V 5A TO252 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	7374In Stock	1000:$0.3060 500:$0.3877 100:$0.5183 10:$0.6820 1:$0.8100
IPD60R1K5CEAUMA1 DISTI # IPD60R1K5CEAUMA1DKR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 650V 5A TO252 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	7374In Stock	1000:$0.3060 500:$0.3877 100:$0.5183 10:$0.6820 1:$0.8100
IPD60R1K5CEAUMA1 DISTI # IPD60R1K5CEAUMA1TR-ND	Infineon Technologies AG	MOSFET N-CHANNEL 650V 5A TO252 RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	5000In Stock	25000:$0.2304 12500:$0.2415 5000:$0.2574 2500:$0.2733
IPD60R1K5CEAUMA1 DISTI # 30163693	Infineon Technologies AG	Trans MOSFET N-CH 600V 5A T/R	2500	2500:$0.1791
IPD60R1K5CEAUMA1 DISTI # IPD60R1K5CEAUMA1	Infineon Technologies AG	CONSUMER - Tape and Reel (Alt: IPD60R1K5CEAUMA1) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.2069 5000:$0.1999 10000:$0.1929 15000:$0.1859 25000:$0.1829
IPD60R1K5CEAUMA1 DISTI # SP001396902	Infineon Technologies AG	CONSUMER (Alt: SP001396902) RoHS: Compliant Min Qty: 2500	Europe - 0	2500:€0.3159 5000:€0.2679 10000:€0.2379 15000:€0.2139 25000:€0.1989
IPD60R1K5CEAUMA1 DISTI # 34AC1676	Infineon Technologies AG	MOSFET, N-CH, 600V, 5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:5A,Drain Source Voltage Vds:600V,On Resistance Rds(on):1.26ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation RoHS Compliant: Yes	0	1000:$0.2460 500:$0.2700 250:$0.2940 100:$0.3180 50:$0.3860 25:$0.4530 10:$0.5210 1:$0.6200
IPD60R1K5CEAUMA1 DISTI # 726-IPD60R1K5CEAUMA1	Infineon Technologies AG	MOSFET CONSUMER RoHS: Compliant	19977	1:$0.6200 10:$0.5210 100:$0.3180 1000:$0.2460 2500:$0.2100
IPD60R1K5CEAUMA1 DISTI # 2781167	Infineon Technologies AG	MOSFET, N-CH, 600V, 5A, TO-252 RoHS: Compliant	0	5000:$0.3230 1000:$0.3410 500:$0.3610 250:$0.4170 100:$0.4930 25:$0.6050 5:$0.6940
IPD60R1K5CEAUMA1 DISTI # 2781167	Infineon Technologies AG	MOSFET, N-CH, 600V, 5A, TO-252 RoHS: Compliant	884	500:£0.1940 250:£0.2210 100:£0.2500 25:£0.4300 5:£0.4630

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IPD60R1K5CEAUMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes