NGTB15N120IHLWG

Mfr. #:: NGTB15N120IHLWG
제조사:: ON Semiconductor
설명:: IGBT Transistors 1200V/15A IGBT LPT TO-247
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: NGTB15N120IHLWG 데이터 시트
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HTML Datasheet:: NGTB15N120IHLWG Datasheet NGTB15N120IHLWG Datasheet (P4-P6)NGTB15N120IHLWG Datasheet (P7-P9)
ECAD Model:

제품 속성
속성 값

제조사: 온세미컨덕터

제품 카테고리: IGBT - 싱글

시리즈: NGTB15N120IHL

포장: 튜브

단위 무게: 0.229281 oz

장착 스타일: 구멍을 통해

패키지 케이스: TO-247-3

입력 유형: 기준

장착형: 구멍을 통해

공급자-장치-패키지: TO-247

파워맥스: 156W

역복구-시간-trr: -

전류 수집기 Ic-Max: 30A

Voltage-Collector-Emitter-Breakdown-Max: 1200V

IGBT형: -

전류 수집기 펄스 Icm: 120A

Vce-on-Max-Vge-Ic: 2.2V @ 15V, 15A

스위칭 에너지: 560μJ (off)

게이트 차지: 160nC

Td-on-off-25°C: -/165ns

시험조건: 600V, 15A, 15 Ohm, 15V

Pd 전력 손실: 250 W

컬렉터-이미터-전압-VCEO-최대: 1200 V

연속 수집기 전류 at-25-C: 30 A

최대 게이트 이미 터 전압: 20 V

Tags: NGTB15N120IHL, NGTB15N120I, NGTB15N12, NGTB15N1, NGTB15, NGTB1, NGTB, NGT

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

NGTB15N120IHLWG 설명

***ark: Igbt Single Transistor, 30 A, 1.8 V, 156 W, 1.2 Kv, To-247, 3 Rohs Compliant: Yes

***Yang: Trans IGBT Chip N-CH 1200V 30A 250mW 3-Pin(3+Tab) TO-247 Tube

***emi: IGBT 1200V 15A FS1 Induction Heating

***r Electronics: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247

***nell: IGBT, 1200V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 156W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Transistor Type: IGBT

***p One Stop: Trans IGBT Chip N-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube

***el Electronic: GRM Series 0402 3.5 pF 50 V ±0.25 pF C0G/NP0 SMT Multilayer Ceramic Capacitor

***ment14 APAC: IGBT, N, 1200V, 15A, TO-247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:15A; No. of Transistors:1; Package / Case:TO-247; Power Dissipation Max:110W; Power Dissipation Pd:110W; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:1.2kV

***ineon SCT: The 1200 V, 15 A hard-switching TRENCHSTOP™ IGBT3 co-packed with free-wheeling diode in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N=-CH 1200V 30A 110000mW 3-Pin(3+Tab) TO-247 Tube

***ure Electronics: TrenchStop Series 1200 V 30 A Through Hole IGBT Trench Field Stop - PG-TO247-3-1

***el Electronic: Multilayer Ceramic Capacitors MLCC - SMD/SMT 0402 9.3pF 25volts C0G +/-0.25pF

***ment14 APAC: IGBT,1200V,15A,TO247; Transistor Type:IGBT; DC Collector Current:15A; Collector Emitter Voltage Vces:2.2V; Power Dissipation Pd:110W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +150°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:110W

***ineon SCT: Infineon's 1200 V, 15 A single TRENCHSTOP™ IGBT3 in a TO247 package, provides significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept, PG-TO247-3, RoHS

***ineon: Infineon's TRENCHSTOP IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of trenchstop-cell and fieldstop concept. The combination of IGBT with soft recovery Emitter Controled Diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. | Summary of Features: Lowest V ce(sat) drop for lower conduction losses; Low switching losses; Easy parallel switching capability due to positive temperature coefficient in V ce(sat); Very soft, fast recovery anti-parallel Emitter Controlled HE diode; High ruggedness, temperature stable behavior; Low EMI emissions; Low gate charge; Very tight parameter distribution | Benefits: Highest efficiency low conduction and switching losses; Comprehensive portfolio in 600V and 1200V for flexibility of design; High device reliability | Target Applications: UPS; Solar inverters; Motor control; Major home appliances; Welding; Other hard switching applications

***ical: Trans IGBT Chip N-CH 1200V 30A 333000mW 3-Pin(3+Tab) TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 30A I(C), 1200V V(BR)CES, N-Channel, TO-247AB

***emi: IGBT, 1200V, 15A, Field Stop Trench

***ark: RAIL/1200V 15A FS2 Trench IGBT

***el Electronic: IC REG LINEAR 24V 500MA TO252-3

***rchild Semiconductor: Using innovative field stop trench IGBT technology, Fairchild’s new series of field stop trench IGBTs offer the optimum performance for hard switching application such as solar inverter, UPS, welder and PFC applications.

***et Europe: Trans IGBT Chip N-CH 1.2KV 30A 3-Pin TO-247 Tube

*** Stop Electro: Insulated Gate Bipolar Transistor, 60A I(C), 1200V V(BR)CES, N-Channel, TO-247AD

***ource: Reverse Conducting IGBT with monolithic body diode

*** Electronic Components: IGBT Transistors REVERSE CONDUCT IGBT 1200V 30A

***ment14 APAC: IGBT+ DIODE,1200V,30A,TO247; Transistor Type:IGBT; DC Collector Current:30A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:390W; Collector Emitter Voltage V(br)ceo:1.2kV; Operating Temperature Range:-40°C to +175°C; Transistor Case Style:TO-247; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Power Dissipation Max:390W

***ical: Trans IGBT Chip N-CH 1200V 30A 294000mW 3-Pin(3+Tab) TO-247 Tube

***r Electronics: Insulated Gate Bipolar Transistor, 20A I(C), 1200V V(BR)CES, N-Channel

***ark: 1200V/15A Very Fast Igbt Fsii To-247 / Tube

***i-Key: IGBT TRENCH/FS 1200V 30A TO247-3

***i-Key Marketplace: INSULATED GATE BIPOLAR TRANSISTO

Market price

부분 #	제조	설명	재고	가격
NGTB15N120IHLWG DISTI # NGTB15N120IHLWGOS-ND	ON Semiconductor	IGBT 1200V 30A 156W TO247-3 RoHS: Compliant Min Qty: 240 Container: Tube	Limited Supply - Call
NGTB15N120IHLWG DISTI # 05W5642	ON Semiconductor	IGBT Single Transistor, 30 A, 1.8 V, 156 W, 1.2 kV, TO-247, 3 , RoHS Compliant: Yes	0
NGTB15N120IHLWG DISTI # 70341210	ON Semiconductor	IGBT,1200V,15A,induction heating,TO247 RoHS: Compliant	0	10:$2.0400 50:$1.9400 100:$1.8400 250:$1.7500
NGTB15N120IHLWG DISTI # 863-NGTB15N120IHLWG	ON Semiconductor	IGBT Transistors 1200V/15A IGBT LPT TO-2 RoHS: Compliant	0
NGTB15N120IHLWG DISTI # 2114671	ON Semiconductor	IGBT, 1200V, 30A, TO247 RoHS: Compliant	0	1:$3.9500 10:$3.2700 100:$2.7100 500:$2.3700 1000:$1.7200 2500:$1.5800 5000:$1.4400 10000:$1.3900

영상	부분 #	설명
	Mfr.#: NGTB15N60R2FG OMO.#: OMO-NGTB15N60R2FG	IGBT Transistors RC2 IGBT 15A 600V
	Mfr.#: NGTB15N120IHRWG OMO.#: OMO-NGTB15N120IHRWG	IGBT Transistors 1200V/15A RC IGBT FSII TO
	Mfr.#: NGTB15N60S1EG OMO.#: OMO-NGTB15N60S1EG	IGBT Transistors 15A 600V IGBT
	Mfr.#: NGTB15N120FL2WG OMO.#: OMO-NGTB15N120FL2WG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/15A VERY FAST IGBT
	Mfr.#: NGTB15N120IHRWG OMO.#: OMO-NGTB15N120IHRWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/15A RC IGBT FSII TO
	Mfr.#: NGTB15N120FLWG OMO.#: OMO-NGTB15N120FLWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/15A IGBT SOLAR/UPS
	Mfr.#: NGTB15N120LWG OMO.#: OMO-NGTB15N120LWG-ON-SEMICONDUCTOR	IGBT Transistors 1200V/15A IGBT LPT TO-247
	Mfr.#: NGTB15N120IHLWG 15N120IHL OMO.#: OMO-NGTB15N120IHLWG-15N120IHL-1190	신규 및 오리지널
	Mfr.#: NGTB15N120IHL OMO.#: OMO-NGTB15N120IHL-1190	신규 및 오리지널
	Mfr.#: NGTB15N60S1 OMO.#: OMO-NGTB15N60S1-1190	신규 및 오리지널

NGTB15N120IHLWG

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes