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Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| HGTG11N120CND DISTI # HGTG11N120CND-ND | ON Semiconductor | IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 1 Container: Tube | 208In Stock |
|
| HGTG11N120CN DISTI # HGTG11N120CN-ND | ON Semiconductor | IGBT 1200V 43A 298W TO247 RoHS: Compliant Min Qty: 300 Container: Tube | Limited Supply - Call | |
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Rail/Tube (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 30 Container: Tube | Americas - 0 |
|
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail (Alt: HGTG11N120CND) RoHS: Compliant Min Qty: 1 | Europe - 0 |
|
| HGTG11N120CND DISTI # 58K8900 | ON Semiconductor | Trans IGBT Chip N-CH 1.2KV 43A 3-Pin(3+Tab) TO-247 Rail - Bulk (Alt: 58K8900) RoHS: Compliant Min Qty: 1 Container: Bulk | Americas - 0 |
|
| HGTG11N120CND DISTI # 58K8900 | ON Semiconductor | SINGLE IGBT, 1.2KV, 43A,DC Collector Current:43A,Collector Emitter Saturation Voltage Vce(on):1.2kV,Power Dissipation Pd:298W,Collector Emitter Voltage V(br)ceo:1.2kV,No. of Pins:3Pins,Operating Temperature Max:150°C,MSL:- RoHS Compliant: Yes | 858 |
|
| HGTG11N120CND DISTI # 512-HGTG11N120CND | ON Semiconductor | IGBT Transistors 43A 1200V NCh w/Anti Parallel Hyprfst Dde RoHS: Compliant | 449 |
|
| HGTG11N120CN DISTI # 512-HGTG11N120CN | ON Semiconductor | IGBT Transistors 43A 1200V N-Ch RoHS: Compliant | 0 | |
| HGTG11N120CND | ON Semiconductor | HGTG11N120CND Series 1200 V 43 A Flange Mount NPT N-Channel IGBT-TO-247 RoHS: Compliant | 7200Tube |
|
| HGTG11N120CN | Fairchild Semiconductor Corporation | Insulated Gate Bipolar Transistor, 43A I(C), 1200V V(BR)CES, N-Channel, TO-247 RoHS: Compliant | 1098 |
|
| HGTG11N120CND DISTI # HGTG11N120CND | ON Semiconductor | Transistor: IGBT,1.2kV,22A,298W,TO247-3 | 83 |
|
| HGTG11N120CND | Fairchild Semiconductor Corporation | RoHS: Compliant | 200 | |
| HGTG11N120CND | ON Semiconductor | 1200V NPT IGBT | 1350 |
|
| HGTG11N120CND DISTI # 1611490 | ON Semiconductor | IGBT, N | 1895 |
|
| HGTG11N120CND DISTI # XSFP00000009698 | Fairchild Semiconductor Corporation | RoHS: Compliant | 5850 in Stock0 on Order |
|
| HGTG11N120CND DISTI # XSKDRABV0037819 | ON SEMICONDUCTOR | RoHS: Compliant | 360 in Stock0 on Order |
|
| HGTG11N120CND DISTI # 1611490 | ON Semiconductor | IGBT, N RoHS: Compliant | 1431 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: G11N120 OMO.#: OMO-G11N120-1190 |
신규 및 오리지널 |
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Mfr.#: G11N120BND OMO.#: OMO-G11N120BND-1190 |
신규 및 오리지널 |
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Mfr.#: G11N120CN OMO.#: OMO-G11N120CN-1190 |
신규 및 오리지널 |
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Mfr.#: G11N120CND OMO.#: OMO-G11N120CND-1190 |
신규 및 오리지널 |
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Mfr.#: G11N60C2 OMO.#: OMO-G11N60C2-1190 |
신규 및 오리지널 |