SISA01DN-T1-GE3

Name: Vishay - SISA01DN-T1-GE3
Brand: Vishay
SKU: OMO-4066000
Price: 1.00 USD
Availability: InStock
Rating: 4.9 (1 reviews)

Mfr. #:: SISA01DN-T1-GE3
제조사:: Vishay
설명:: MOSFET P-CH 30V POWERPAK 1212-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SISA01DN-T1-GE3 데이터 시트
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추가 정보:: SISA01DN-T1-GE3 추가 정보

제품 속성
속성 값

Tags: SISA0, SISA, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISA01DN-T1-GE3 설명

***et Europe: TrenchFET Gen IV Power MOSFET P-Channel Single -30V VDS +16V -20V VGS -60A ID 8-Pin PowerPAK 1212 T/R

***i-Key: MOSFET P-CH 30V POWERPAK 1212-8

***ark: Mosfet, P-Ch, -30V, -60A, Powerpak 1212; Transistor Polarity:p Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(On):0.0041Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Rohs Compliant: Yes

***ment14 APAC: Prices include import duty and tax. MOSFET, P-CH, -30V, -60A, POWERPAK 1212; Transistor Polarity:P Channel; Continuous Drain Current Id:-60A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.0041ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.2V; Power Dissipation Pd:52W; Transistor Case Style:PowerPAK 1212; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:TrenchFET Gen IV Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2018)

***nell: MOSFET, CA-P, -30V, -60A, POWERPAK 1212; Polarità Transistor:Canale P; Corrente Continua di Drain Id:-60A; Tensione Drain Source Vds:-30V; Resistenza di Attivazione Rds(on):0.0041ohm; Tensione Vgs di Misura Rds(on):-10V; Tensione di Soglia Vgs:-2.2V; Dissipazione di Potenza Pd:52W; Modello Case Transistor:PowerPAK 1212; No. di Pin:8Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:TrenchFET Gen IV Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2018)

SISA01DN-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET® P-Channel MOSFETs: Vishay Siliconix TrenchFET® P-Channel MOSFETs feature the newest generation of P-channel silicon technology. This enables these devices to provide industry-best on-resistance specifications like 1.9 milliohms in the PowerPAK® SO-8. The P-channel MOSFETs have on-resistance as low as half the level of the next best devices on the market. These MOSFETs are available in two variants that employ either Generation III or Generation IV technology. The Gen-IV P-channel MOSFETs offer low on-resistance and come in a thermally enhanced compact package.

Market price

부분 #	제조	설명	재고	가격
SISA01DN-T1-GE3 DISTI # SISA01DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 30V POWERPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2431In Stock	1000:$0.4284 500:$0.5355 100:$0.7229 10:$0.9370 1:$1.0700
SISA01DN-T1-GE3 DISTI # SISA01DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 30V POWERPAK 1212-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2431In Stock	1000:$0.4284 500:$0.5355 100:$0.7229 10:$0.9370 1:$1.0700
SISA01DN-T1-GE3 DISTI # SISA01DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 30V POWERPAK 1212-8 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	Temporarily Out of Stock	3000:$0.3769
SISA01DN-T1-GE3 DISTI # SISA01DN-T1-GE3	Vishay Intertechnologies	TrenchFET Gen IV Power MOSFET P-Channel Single -30V VDS +16V -20V VGS -60A ID8-Pin PowerPAK 1212 T/R - Tape and Reel (Alt: SISA01DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Reel	Americas - 0	3000:$0.3429 6000:$0.3329 12000:$0.3199 18000:$0.3109 30000:$0.3019
SISA01DN-T1-GE3 DISTI # 50AC9662	Vishay Intertechnologies	MOSFET, P-CH, -30V, -60A, POWERPAK 1212,Transistor Polarity:P Channel,Continuous Drain Current Id:-60A,Drain Source Voltage Vds:-30V,On Resistance Rds(on):0.0041ohm,Rds(on) Test Voltage Vgs:-10V,Threshold Voltage Vgs:-2.2V,RoHS Compliant: Yes	5595	1000:$0.3790 500:$0.4730 250:$0.5230 100:$0.5720 50:$0.6330 25:$0.6930 10:$0.7540 1:$0.9400
SISA01DN-T1-GE3 DISTI # 78-SISA01DN-T1-GE3	Vishay Intertechnologies	MOSFET -30V Vds 16V Vgs PowerPAK 1212-8 RoHS: Compliant	3754	1:$0.9400 10:$0.7540 100:$0.5720 500:$0.4730 1000:$0.3790 3000:$0.3430
SISA01DN-T1-GE3 DISTI # 2846634	Vishay Intertechnologies	MOSFET, P-CH, -30V, -60A, POWERPAK 1212 RoHS: Compliant	5595	5000:$0.5640 1000:$0.5840 500:$0.6170 250:$0.7270 100:$0.8840 25:$1.1300 5:$1.3600
SISA01DN-T1-GE3 DISTI # 2846634	Vishay Intertechnologies	MOSFET, P-CH, -30V, -60A, POWERPAK 1212 RoHS: Compliant	5625	500:£0.3680 250:£0.4070 100:£0.4460 25:£0.5900 5:£0.6580

SISA01DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes