SI4816BDY-T1-GE3

Mfr. #:: SI4816BDY-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 30V Vds 20V Vgs SO-8
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SI4816BDY-T1-GE3 데이터 시트
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HTML Datasheet:: SI4816BDY-T1-GE3 Datasheet SI4816BDY-T1-GE3 Datasheet (P4-P6)SI4816BDY-T1-GE3 Datasheet (P7-P9)SI4816BDY-T1-GE3 Datasheet (P10-P12)
ECAD Model:
추가 정보:: SI4816BDY-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SO-8

채널 수:: 2 Channel

트랜지스터 극성:: N-채널

Id - 연속 드레인 전류:: 6.8 A, 11.4 A

Rds On - 드레인 소스 저항:: 11.5 mOhms, 18.5 mOhms

Vgs th - 게이트 소스 임계 전압:: 1 V

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 7.8 nC, 11.6 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 1.4 W, 2.4 W

구성:: 듀얼

채널 모드:: 상승

상표명:: TrenchFET

포장:: 릴

키:: 1.75 mm

길이:: 4.9 mm

시리즈:: SI4

트랜지스터 유형:: 2 N-Channel

너비:: 3.9 mm

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 30 S, 31 S

가을 시간:: 9 ns, 11 ns

상품 유형:: MOSFET

상승 시간:: 9 ns, 9 ns

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 24 ns, 31 ns

일반적인 켜기 지연 시간:: 11 ns, 13 ns

부품 번호 별칭:: SI4816DY-T1-E3-S

단위 무게:: 0.006596 oz

Tags: SI4816BDY-T, SI4816BD, SI4816B, SI4816, SI481, SI48, SI4

Service Guarantees

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SI4816BDY-T1-GE3 설명

***ure Electronics: Dual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8

***ical: Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R

***nell: MOSFET, NN CH, 30V, 8SOIC; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:5.8A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0155ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:1W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SOIC; No. of Pins:8; Operating Temperature Range:-55°C to +150°C

SI4816BDY-T1-GE3 추가 정보

SkyFET® Power MOSFETs: Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.

Si4 MOSFETs: Vishay/Siliconix Si4 MOSFETs are TrenchFET® power MOSFETs used for amplifying electronic signals. These Si4 MOSFETs are available in N-channel, P-channel, and N- & P-channel. The Si4 MOSFETs offer different VGS, VDS, and temperature ranges. The Si4 MOSFETs operate in an enhancement mode and used for switching between electronic signals. These MOSFETs are a surface mount, 100% Rg and UIS tested, and comes in a reel-package.Learn More

Market price

부분 #	제조	설명	재고	가격
SI4816BDY-T1-GE3 DISTI # V72:2272_09216580	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R RoHS: Compliant	2370	1000:$0.5306 500:$0.8441 250:$0.9448 100:$0.9467 25:$1.1658 10:$1.1691 1:$1.3618
SI4816BDY-T1-GE3 DISTI # V36:1790_09216580	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R RoHS: Compliant	0
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3CT-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	321In Stock	1000:$0.9253 500:$1.1055 100:$1.4057 10:$1.7360 1:$1.9100
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3DKR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	321In Stock	1000:$0.9253 500:$1.1055 100:$1.4057 10:$1.7360 1:$1.9100
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3TR-ND	Vishay Siliconix	MOSFET 2N-CH 30V 5.8A 8-SOIC RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	12500:$0.7950 5000:$0.8109 2500:$0.8400
SI4816BDY-T1-GE3 DISTI # 32378715	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R RoHS: Compliant	2370	1000:$0.5704 500:$0.9074 250:$1.0157 100:$1.0177 25:$1.2532 15:$1.2568
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.7209 5000:€0.4919 10000:€0.4229 15000:€0.3909 25000:€0.3639
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R (Alt: SI4816BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
SI4816BDY-T1-GE3 DISTI # SI4816BDY-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4816BDY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.7709 5000:$0.7479 10000:$0.7179 15000:$0.6979 25000:$0.6789
SI4816BDY-T1-GE3 DISTI # 26R1889	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	500:$0.9280 250:$0.9940 100:$1.0600 50:$1.1600 25:$1.2700 10:$1.3700 1:$1.6500
SI4816BDY-T1-GE3 DISTI # 15R5082	Vishay Intertechnologies	DUAL N CHANNEL MOSFET, 30V, SOIC, FULL REEL,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V RoHS Compliant: Yes	0	10000:$0.6630 6000:$0.6890 4000:$0.7160 2000:$0.7950 1000:$0.8380 1:$0.8910
SI4816BDY-T1-GE3 DISTI # 78Y6742	Vishay Intertechnologies	MOSFET, NN CH, 30V, 8SOIC,Transistor Polarity:Dual N Channel,Continuous Drain Current Id:5.8A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0155ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power Dissipation, RoHS Compliant: Yes	1785	500:$1.1400 250:$1.2100 100:$1.2900 50:$1.4000 25:$1.5100 10:$1.6200 1:$1.9200
SI4816BDY-T1-GE3 DISTI # 781-SI4816BDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	818	1:$1.6400 10:$1.3600 100:$1.0600 500:$0.9280
SI4816BDY-T1-GE3	Vishay Intertechnologies	RoHS: Compliant	2380Cut Tape/Mini-Reel	1:$0.9050 50:$0.6550 100:$0.6150 250:$0.5700 500:$0.4700
SI4816BDY-T1-GE3	Vishay Intertechnologies	Dual N-Channel 30 V 0.0185/0.0115 O 10 nC Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant	17500Reel	2500:$0.4250
SI4816BDY-T1-GE3 DISTI # TMOSP10764	Vishay Intertechnologies	DUAL30V 6,8A 18,5mOhm SO-8 RoHS: Compliant	Stock DE - 0Stock HK - 0Stock US - 0	2500:$0.5497
SI4816BDY-T1-GE3	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA RoHS: Compliant	Europe - 2500
SI4816BDY-T1-GE3	Vishay Intertechnologies	INSTOCK	910
SI4816BDY-T1-GE3	Vishay Intertechnologies	MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant	Americas - 2500
SI4816BDY-T1-GE3 DISTI # 2101479	Vishay Intertechnologies	MOSFET, NN CH, 30V, 8SOIC RoHS: Compliant	2290	500:£0.7290 250:£0.7810 100:£0.8330 25:£1.0700 5:£1.1700
SI4816BDY-T1-GE3 DISTI # 2101479	Vishay Intertechnologies	MOSFET, NN CH, 30V, 8SOIC RoHS: Compliant	1807	2500:$1.3800 500:$1.4000 100:$1.6000 10:$2.0500 1:$2.4700
SI4816BDY-T1-GE3 DISTI # XSFR00000009895	Vishay Intertechnologies	RoHS: Compliant	0 in Stock0 on Order
SI4816BDY-T1-GE3 DISTI # XSFP00000102898	Vishay Siliconix	RoHS: Compliant	16286 in Stock0 on Order	16286:$1.6500 2500:$1.8100

관련 상품

영상	부분 #	설명
	Mfr.#: M24M02-DRMN6TP OMO.#: OMO-M24M02-DRMN6TP	EEPROM 2 Mbit serial I2C 1.8V to 5.5V EEPROM
	Mfr.#: SP3010-04UTG OMO.#: OMO-SP3010-04UTG	TVS Diodes / ESD Suppressors 4 Ch 8kV 6V .45pF
	Mfr.#: SN74LVC1G125DCKR OMO.#: OMO-SN74LVC1G125DCKR	Buffers & Line Drivers SINGLE BUS BUFFER GATE
	Mfr.#: MBR0540T1G OMO.#: OMO-MBR0540T1G	Schottky Diodes & Rectifiers 0.5A 40V
	Mfr.#: ADP1850ACPZ-R7 OMO.#: OMO-ADP1850ACPZ-R7	Switching Controllers Wide Range Input Dual-Phase Sync
	Mfr.#: ISL6236AIRZ OMO.#: OMO-ISL6236AIRZ	Switching Controllers ISL6236 QD QUTPUT CNTRLR IMVP-6 32LD
	Mfr.#: LD1117DT50TR OMO.#: OMO-LD1117DT50TR	LDO Voltage Regulators 5.0V 0.8A Positive
	Mfr.#: TL1963A-18DCYR OMO.#: OMO-TL1963A-18DCYR	LDO Voltage Regulators 1.5A Lo-Noise Fast- Trans-Resp LDO Reg
	Mfr.#: ISL6236AIRZ OMO.#: OMO-ISL6236AIRZ-INTERSIL	Switching Controllers ISL6236 QD QUTPUT CNTRLR IMVP-6 32LD
	Mfr.#: 06033C103KAT2A OMO.#: OMO-06033C103KAT2A-AVX	Multilayer Ceramic Capacitors MLCC - SMD/SMT 25volts 0.01uF 10% X7R

유효성

재고:: Available
주문 시:: 1990
수량 입력:

SI4816BDY-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.64~~; ~~US$1.64~~

10: ~~US$1.36~~; ~~US$13.60~~

100: ~~US$1.06~~; ~~US$106.00~~

500: ~~US$0.93~~; ~~US$463.50~~

1000: ~~US$0.77~~; ~~US$768.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

SI4816BDY-T 4
SI4816BD 5
SI4816B 6
SI4816 12
SI481 53
SI48 447
SI4 2994

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SI4816BDY-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes