We guarantee 100% customer satisfaction.
Quality GuaranteesWe provide 90-360 days warranty.
If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.
we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.
Email: [email protected]
| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSB012N03LX3 G DISTI # BSB012N03LX3GTR-ND | Infineon Technologies AG | MOSFET N-CH 30V 180A 2WDSON RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Limited Supply - Call | |
| BSB012N03LX3 G DISTI # BSB012N03LX3GCT-ND | Infineon Technologies AG | MOSFET N-CH 30V 180A 2WDSON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | Limited Supply - Call | |
| BSB012N03LX3 G DISTI # BSB012N03LX3GDKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 180A 2WDSON RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | Limited Supply - Call | |
| BSB012N03LX3 DISTI # BSB012N03LX3 | Infineon Technologies AG | - Bulk (Alt: BSB012N03LX3) Min Qty: 404 Container: Bulk | Americas - 0 |
|
| BSB012N03LX3G DISTI # BSB012N03LX3G | Infineon Technologies AG | Trans MOSFET N-CH 30V 39A 7-Pin WDSON - Bulk (Alt: BSB012N03LX3G) RoHS: Compliant Min Qty: 334 Container: Bulk | Americas - 0 |
|
| BSB012N03LX3GXUMA1 DISTI # BSB012N03LX3GXUMA1 | Infineon Technologies AG | - Bulk (Alt: BSB012N03LX3GXUMA1) RoHS: Compliant Min Qty: 334 Container: Bulk | Americas - 0 |
|
| BSB012N03LX3 G DISTI # 726-BS726-B012N03LX3 | Infineon Technologies AG | MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 RoHS: Compliant | 0 | |
| BSB012N03LX3 | Infineon Technologies AG | Infineon OptlMOS™ N-Channel Power MOSFETBSB012N03LX3 - WDSON-2-8 RoHS: Not Compliant | 3581 |
|
| BSB012N03LX3GXUMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSB012N03LX3G | Infineon Technologies AG | Power Field-Effect Transistor, 39A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 7372 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSB012NE2LXIXUMA1 OMO.#: OMO-BSB012NE2LXIXUMA1 |
MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS |
|
|
Mfr.#: BSB012NE2LXI OMO.#: OMO-BSB012NE2LXI |
MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS |
|
|
Mfr.#: BSB012N03LX3 G OMO.#: OMO-BSB012N03LX3-G |
MOSFET N-Ch 30V 180A CanPAK3 MX OptiMOS 3 |
|
Mfr.#: BSB012N03LX3 OMO.#: OMO-BSB012N03LX3-1190 |
- Bulk (Alt: BSB012N03LX3) |
|
|
Mfr.#: BSB012N03LX3GXUMA1 OMO.#: OMO-BSB012N03LX3GXUMA1-1190 |
- Bulk (Alt: BSB012N03LX3GXUMA1) |
|
|
Mfr.#: BSB012NE2LX5G OMO.#: OMO-BSB012NE2LX5G-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSB012NE2LXI OMO.#: OMO-BSB012NE2LXI-1190 |
MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS |
|
|
Mfr.#: BSB012NE2LXXUMA1 OMO.#: OMO-BSB012NE2LXXUMA1-1190 |
신규 및 오리지널 |
|
Mfr.#: BSB012NE2LX |
IGBT Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS |
|
|
Mfr.#: BSB012NE2LXIXUMA1 |
RF Bipolar Transistors MOSFET N-Ch 25V 170A CanPAK-3 MX OptiMOS |