CSD17507Q5A

Mfr. #:: CSD17507Q5A
설명:: MOSFET N-CH 30V 65A 8SON
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD17507Q5A 데이터 시트
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추가 정보:: CSD17507Q5A 추가 정보 CSD17507Q5A Product Details

제품 속성
속성 값

제조사: 텍사스 인스트루먼트

제품 카테고리: FET - 단일

시리즈: 넥스펫

포장: Digi-ReelR 대체 패키징

장착 스타일: SMD/SMT

상표명: 넥스펫

패키지 케이스: 8-PowerTDFN

기술: 시

작동 온도: -55°C ~ 150°C (TJ)

장착형: 표면 실장

채널 수: 1 Channel

공급자-장치-패키지: 8-VSON (5x6)

구성: 하나의

FET형: MOSFET N-채널, 금속 산화물

파워맥스: 3W

트랜지스터형: 1 N-Channel

드레인-소스 전압 Vdss: 30V

입력-커패시턴스-Ciss-Vds: 530pF @ 15V

FET 기능: 기준

Current-Continuous-Drain-Id-25°C: 13A (Ta), 65A (Tc)

Rds-On-Max-Id-Vgs: 10.8 mOhm @ 11A, 10V

Vgs-th-Max-Id: 2.1V @ 250μA

Gate-Charge-Qg-Vgs: 3.6nC @ 4.5V

Pd 전력 손실: 3 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

Vgs 게이트 소스 전압: 20 V

Id-연속-드레인-전류: 13 A

Vds-드레인-소스-고장-전압: 30 V

Vgs-th-Gate-Source-Threshold-Voltage: 1.6 V

Rds-On-Drain-Source-Resistance: 11.8 mOhms

트랜지스터 극성: N-채널

Qg-Gate-Charge: 2.8 nC

순방향 트랜스컨덕턴스-최소: 16 S

Tags: CSD17507Q, CSD17507, CSD1750, CSD175, CSD17, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

CSD17507Q5A 설명

***as Instruments: 30-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 10.8 mOhm 8-VSONP -55 to 150

***th Star Micro: the nexfet power mosfet has been designed to minimize losses in power conversion applications.

***p One Stop: Trans MOSFET N-CH 30V 13A 8-Pin VSONP EP T/R

***Yang: MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET

***ark: N-CHANNEL, MOSFET, 30V, 65A, SON-8

*** Stop Electro: Power Field-Effect Transistor, 13A I(D), 30V, 0.0161ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***el Electronic: IC REG LIN POS ADJ 250MA 8MSOP

***i-Key Marketplace: CSD17507Q5A 30V N-CHANNEL HIGH S

***ernational Rectifier: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package

***(Formerly Allied Electronics): MOSFET, 30V, 24A, 3.5 MOHM, 20 NC QG, PQFN56

***et Europe: Trans MOSFET N-CH 30V 24A 8-Pin PQFN T/R

***ment14 APAC: MOSFET, N CH, 30V, 24A, PQFN56; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):2.9mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:3.1W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:76A; Power Dissipation Pd:3.1W; Voltage Vgs Max:20V

***emi: N-Channel PowerTrench® MOSFET, Logic Level, 30V, 60A, 9mΩ

***Yang: Trans MOSFET N-CH 30V 60A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel

***ure Electronics: N-Channel 30 V 9 mohm Surface Mount Logic Level PowerTrench Mosfet TO-263AB

*** Stop Electro: Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***el Electronic: Chip Resistor - Surface Mount 680Ohm 0402 (1005 Metric) ±1% ±100ppm/°C Thick Film Tape & Reel (TR) 2 1 (Unlimited) ERJ RES SMD 680 OHM 1% 1/10W 0402

***nell: MOSFET, N-CH, 30V, 60A, TO-263AB-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 60A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0068ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Dissipation Pd: 60W; Transistor Case Style: TO-263AB; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)

***rchild Semiconductor: This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.

***emi: N-Channel PowerTrench® SyncFET™ MOSFET, 30V, 55A, 10.5mΩ

***ure Electronics: N-Channel 30 V 55 A 10.5 mO Surface Mount PowerTrench Mosfet - DPAK

***r Electronics: Power Field-Effect Transistor, 55A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

***ment14 APAC: MOSFET, N, SMD, TO-252; Transistor Polarity:N Channel; Continuous Drain Current Id:55A; Drain Source Voltage Vds:30V; On Resistance Rds(on):10.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.4V; Power Dissipation Pd:60mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-252; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Id Max:55A; Package / Case:DPAK; Power Dissipation Pd:60mW; Pulse Current Idm:100A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

***rchild Semiconductor: The FDD6680AS is designed to replace a single MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDD6680AS includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. The performance of the FDD6680AS as the low-side switch in a synchronous rectifier is indistinguishable from the performance of the FDD6680A in parallel with a Schottky diode.

***(Formerly Allied Electronics): MOSFET, N Ch., 30V, 65A, 8.4 MOHM, 8.5 NC QG, D-PAK, Pb-Free

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***ment14 APAC: MOSFET, N D-PAK; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:65W; Transistor Case Style:D-PAK; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Charge Qrr @ Tj = 25°C Typ:8.5nC; Current Id Max:65A; Package / Case:DPAK; Power Dissipation Pd:65W; Power Dissipation Pd:65W; Pulse Current Idm:260A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:1.9V; Voltage Vgs Rds on Measurement:10V

***ure Electronics: Single N-Channel 30 V 6.1 mOhm 26 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 3.3mm X 3.3mm PQFN package, PQFN 3.3X3.3 8L, RoHS

***ark: TAPE AND REEL / MOSFET, 30V, 25A, 4.9 mOhm, 13nC Qg, PQFN 3.3x3.3

***nell: MOSFET, N-CH, 30V, 57A, PQFN-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 57A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 0.0048ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.7V; Pow

***ineon: Benefits: RoHS Compliant; Low Thermal Resistance to PCB (less than 3.8C/W); Low Profile (less than 1.05 mm); Industry-Standard Pinout; Compatible with Existing Surface Mount Techniques; Qualified Industrial; Qualified MSL1 | Target Applications: Battery Protection; Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Load Switch High Side; Load Switch Low Side; Point of Load ControlFET

***ark: Mosfet Transistor, N Channel, 21 A, 25 V, 0.0063 Ohm, 10 V, 1.9 V

***ure Electronics: IRLR8259 Series 25 V 8.7 mOhm 6.8 nC Surface Mount HEXFET Power MOSFET - DPAK-3

***(Formerly Allied Electronics): MOSFET; 25V; 57A; 8.7MOHM; 6.8 NC QG; LOGIC LEVEL; D-PAK

*** Source Electronics: Trans MOSFET N-CH 25V 57A 3-Pin(2+Tab) DPAK T/R / MOSFET N-CH 25V 57A DPAK

***ineon SCT: 25V Single N-Channel HEXFET Power MOSFET in a D-Pak package, DPAK-3, RoHS

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA

***nell: MOSFET, N-CH 25V 57A DPAK; Transistor Polarity: N Channel; Continuous Drain Current Id: 21A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0063ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.9V; Power Di

Market price

부분 #	설명	재고	가격
CSD17507Q5A DISTI # 296-27791-1-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	10563In Stock	1000:$0.4206 500:$0.5257 100:$0.7097 10:$0.9200 1:$1.0500
CSD17507Q5A DISTI # 296-27791-6-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	10563In Stock	1000:$0.4206 500:$0.5257 100:$0.7097 10:$0.9200 1:$1.0500
CSD17507Q5A DISTI # 296-27791-2-ND	MOSFET N-CH 30V 65A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	10000In Stock	12500:$0.3318 5000:$0.3445 2500:$0.3700
CSD17507Q5A DISTI # CSD17507Q5A	Trans MOSFET N-CH 30V 13A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD17507Q5A) RoHS: Not Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.3359 5000:$0.3199 10000:$0.3089 15000:$0.2989 25000:$0.2909
CSD17507Q5A DISTI # CSD17507Q5A	Trans MOSFET N-CH 30V 13A 8-Pin SON EP T/R (Alt: CSD17507Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Europe - 0	2500:€0.4679 5000:€0.3819 10000:€0.3509 15000:€0.2999 25000:€0.2799
CSD17507Q5A DISTI # 78Y9859		1993	1:$0.8700 10:$0.7200 25:$0.6350 50:$0.5490 100:$0.4640 250:$0.4330 500:$0.4030 1000:$0.3720
CSD17507Q5A	30V N-Channel High Side NexFET Power MOSFET with 20 Volt Vgs	5000	1000:$0.2600 750:$0.3000 500:$0.3700 250:$0.4500 100:$0.4900 25:$0.5700 10:$0.6200 1:$0.6900
CSD17507Q5A DISTI # 595-CSD17507Q5A	MOSFET 30V NChannel Hi Side NexFET Pwr MOSFET RoHS: Compliant	2345	1:$0.8700 10:$0.7200 100:$0.4640 1000:$0.3720 2500:$0.3370
CSD17507Q5A	Power Field-Effect Transistor, 13A I(D), 30V, 0.0161ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET RoHS: Compliant	5360	1000:$0.2900 500:$0.3100 100:$0.3200 25:$0.3400 1:$0.3600
CSD17507Q5A DISTI # 1854245	MOSFET,N CH,30V,65A,SON-8 RoHS: Not Compliant	2038	5:£0.6120 25:£0.5530 100:£0.3510 250:£0.3190 500:£0.2870

영상	부분 #	설명
	Mfr.#: CSD17307Q5A OMO.#: OMO-CSD17307Q5A	MOSFET 30V N Channel NexFET Power MOSFET
	Mfr.#: CSD17578Q5A OMO.#: OMO-CSD17578Q5A	MOSFET 30V, N ch NexFET MOSFETG , single SON5x6, 9.3mOhm 8-VSONP
	Mfr.#: CSD17313Q2Q1T OMO.#: OMO-CSD17313Q2Q1T	MOSFET Automotive 30-V N-Channel NexFET Power MOSFET 6-WSON -55 to 150
	Mfr.#: CSD17322Q5A OMO.#: OMO-CSD17322Q5A	MOSFET 30V,NCh Nex FET Pwr MOSFET
	Mfr.#: CSD17382F4 OMO.#: OMO-CSD17382F4	MOSFET 30V, N ch NexFET MOSFETG , single LGA 1.0 x 0.6mm, 67mOhm 3-PICOSTAR -55 to 150
	Mfr.#: CSD17313Q2T OMO.#: OMO-CSD17313Q2T-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 5A
	Mfr.#: CSD17506Q OMO.#: OMO-CSD17506Q-TEXAS-INSTRUMENTS	신규 및 오리지널
	Mfr.#: CSD17556Q5B/CSD16321 OMO.#: OMO-CSD17556Q5B-CSD16321-TEXAS-INSTRUMENTS	신규 및 오리지널
	Mfr.#: CSD17577Q5AT OMO.#: OMO-CSD17577Q5AT-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 60A 8VSON
	Mfr.#: CSD17510Q5A OMO.#: OMO-CSD17510Q5A-TEXAS-INSTRUMENTS	MOSFET N-CH 30V 100A 8SON

CSD17507Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes