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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC034N03LSGATMA1 DISTI # V72:2272_06384624 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 4240 |
|
| BSC034N03LSGATMA1 DISTI # BSC034N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 100A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | 5000In Stock |
|
| BSC034N03LSGATMA1 DISTI # 27607303 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP T/R RoHS: Compliant | 4240 |
|
| BSC034N03LSGXT DISTI # BSC034N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 100A 8-Pin TDSON EP - Tape and Reel (Alt: BSC034N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 5000 |
|
| BSC034N03LSGATMA1 DISTI # 97Y1248 | Infineon Technologies AG | MOSFET, N-CH, 30V, 100A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power RoHS Compliant: Yes | 3279 |
|
| BSC034N03LSGATMA1. DISTI # 27AC1073 | Infineon Technologies AG | Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.0028ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power Dissipation Pd:57W,No. of Pins:8Pins RoHS Compliant: Yes | 0 |
|
| BSC034N03LS G DISTI # 726-BSC034N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 246 |
|
| BSC034N03LSGATMA1 DISTI # 726-BSC034N03LSGATMA | Infineon Technologies AG | MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 RoHS: Compliant | 6331 |
|
| BSC034N03LSGATMA1 DISTI # BSC034N03LSGATMA1 | Infineon Technologies AG | Transistor: N-MOSFET,unipolar,30V,100A,57W,PG-TDSON-8 | 2534 |
|
| BSC034N03LSGATMA1 DISTI # 2617420 | Infineon Technologies AG | MOSFET, N-CH, 30V, 100A, PG-TDSON-8 RoHS: Compliant | 3279 |
|
| BSC034N03LSGATMA1 DISTI # C1S322000626320 | Infineon Technologies AG | MOSFETs RoHS: Compliant | 4240 |
|
| BSC034N03LSGATMA1 DISTI # 2617420 | Infineon Technologies AG | MOSFET, N-CH, 30V, 100A, PG-TDSON-8 RoHS: Compliant | 3282 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC034N03LSGATMA1 OMO.#: OMO-BSC034N03LSGATMA1 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC034N03LS G OMO.#: OMO-BSC034N03LS-G |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC034N06NSATMA1 OMO.#: OMO-BSC034N06NSATMA1 |
MOSFET MV POWER MOS |
|
Mfr.#: BSC034N03LS G OMO.#: OMO-BSC034N03LS-G-1190 |
MOSFET N-Ch 30V 100A TDSON-8 OptiMOS 3 |
|
|
Mfr.#: BSC034N03LSG OMO.#: OMO-BSC034N03LSG-1190 |
신규 및 오리지널 |
|
Mfr.#: BSC034N03LSGATMA1 |
MOSFET N-CH 30V 100A TDSON-8 |
|
|
Mfr.#: BSC034N03LSGATMA1 , TDA7 |
신규 및 오리지널 |
|
|
Mfr.#: BSC034N06NS OMO.#: OMO-BSC034N06NS-1190 |
MOSFET DIFFERENTIATED MOSFETS |
|
|
Mfr.#: BSC034N06NSATMA1 |
MOSFET N-CH 60V 100A 8TDSON |
|
|
Mfr.#: BSC034N06NSATMA1-CUT TAPE |
신규 및 오리지널 |