IPI65R150CFDXKSA1

IPI65R150CFDXKSA1
Mfr. #:
IPI65R150CFDXKSA1
제조사:
Infineon Technologies
설명:
RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPI65R150CFDXKSA1 데이터 시트
배달:
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ECAD Model:
제품 속성
속성 값
제조사
인피니언 테크놀로지스
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
IPI65R150
포장
튜브
부분 별칭
IPI65R150CFD IPI65R150CFDXK SP000907028
단위 무게
0.073511 oz
상표명
쿨모스
패키지 케이스
TO-262-3
기술
채널 수
1 Channel
트랜지스터형
1 N-Channel
Id-연속-드레인-전류
72 A
Vds-드레인-소스-고장-전압
700 V
Rds-On-Drain-Source-Resistance
150 mOhms
트랜지스터 극성
N-채널
Tags
IPI65R1, IPI65, IPI6, IPI
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
Trans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262
***i-Key
MOSFET N-CH 650V 22.4A TO-262
***ineon
650V CoolMOS CFD2 is Infineon's second generation of market leading high voltage CoolMOS MOSFETs with integrated fast body diode. The CFD2 devices are the successor of 600V CFD with improved energy efficiency. The softer commutation behavior and therefore better EMI behavior gives this product a clear advantage in comparison with competitor parts. | Summary of Features: 650V technology with integrated fast body diode; Limited voltage overshoot during hard commutation; Significant Q g reduction compared to 600V CFD technology; Tighter R DS(ON) max to R DS(on) typ window; Easy to design-in; Lower price compared to 600V CFD technology | Benefits: Low switching losses due to low Q rr at repetitive commutation on body diode; Self limiting di/dt and dv/dt; Low Q oss; Reduced turn on and turn of delay times; Outstanding CoolMOS quality | Target Applications: Telecom; Server; Solar; HID lamp ballast; LED lighting; eMobility
부분 # 제조 설명 재고 가격
IPI65R150CFDXKSA1
DISTI # IPI65R150CFDXKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V 22.4A TO-262
RoHS: Compliant
Min Qty: 500
Container: Tube
Limited Supply - Call
  • 500:$2.2182
IPI65R150CFDXKSA1
DISTI # SP000907028
Infineon Technologies AGTrans MOSFET N-CH 700V 22.4A 3-Pin(3+Tab) TO-262 (Alt: SP000907028)
RoHS: Compliant
Min Qty: 1
Europe - 0
  • 1:€1.5900
  • 10:€1.4900
  • 25:€1.4900
  • 50:€1.3900
  • 100:€1.3900
  • 500:€1.3900
  • 1000:€1.3900
IPI65R150CFDXKSA1Infineon Technologies AGPower Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
RoHS: Compliant
13500
  • 1000:$1.5900
  • 500:$1.6800
  • 100:$1.7500
  • 25:$1.8200
  • 1:$1.9600
IPI65R150CFDXKSA1
DISTI # 726-IPI65R150CFDXKSA
Infineon Technologies AGMOSFET N-Ch 700V 72A I2PAK-3
RoHS: Compliant
0
    영상 부분 # 설명
    IPI65R150CFD

    Mfr.#: IPI65R150CFD

    OMO.#: OMO-IPI65R150CFD-1190

    Power Field-Effect Transistor, 22.4A I(D), 650V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA
    IPI65R150CFDXKSA1

    Mfr.#: IPI65R150CFDXKSA1

    OMO.#: OMO-IPI65R150CFDXKSA1-INFINEON-TECHNOLOGIES

    RF Bipolar Transistors MOSFET N-Ch 700V 72A I2PAK-3
    유효성
    재고:
    Available
    주문 시:
    3500
    수량 입력:
    IPI65R150CFDXKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$2.24
    US$2.24
    10
    US$2.12
    US$21.23
    100
    US$2.01
    US$201.15
    500
    US$1.90
    US$949.90
    1000
    US$1.79
    US$1 788.00
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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