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MRFE8VP8600HR5

MRFE8VP8600HR5
Mfr. #:
MRFE8VP8600HR5
제조사:
NXP / Freescale
설명:
RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
MRFE8VP8600HR5 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
NXP
제품 카테고리:
RF MOSFET 트랜지스터
RoHS:
Y
트랜지스터 극성:
듀얼 N-채널
기술:
시
Id - 연속 드레인 전류:
2.8 A
Vds - 드레인 소스 항복 전압:
- 500 mV, 115 V
얻다:
21 dB
출력 파워:
140 W
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
장착 스타일:
SMD/SMT
패키지/케이스:
NI-1230H-4
포장:
릴
동작 주파수:
470 MHz to 860 MHz
시리즈:
MRFE8VP8600H
유형:
RF 전력 MOSFET
상표:
NXP / 프리스케일
채널 수:
2 Channel
Pd - 전력 손실:
1.25 kW
상품 유형:
RF MOSFET 트랜지스터
공장 팩 수량:
50
하위 카테고리:
MOSFET
Vgs - 게이트 소스 전압:
- 6 V, 10 V
Vgs th - 게이트 소스 임계 전압:
1.3 V
부품 번호 별칭:
935318365178
단위 무게:
0.464343 oz
Tags
MRFE, MRF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor,470 to 860 MHz, - W, Typ Gain in dB is 20 @ 810 MHz, 50 V, LDMOS, SOT1787
***ark
140 W Avg. Over 470-870 Mhz, 50 V Rf Power Ldmos Transistor Rohs Compliant: Yes
***escale Semiconductor
Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
***et Europe
Trans MOSFET N-CH 115V 5-Pin NI-1230H T/R
***ical
RF Power LDMOS Transistor
***i-Key
TRANS RF N-CH 600W 50V
***hardson RFPD
RF POWER TRANSISTOR
부분 # 제조 설명 재고 가격
MRFE8VP8600HR5
DISTI # V72:2272_07204249		NXP SemiconductorsTrans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R25
  • 25:$128.0100
  • 10:$129.9900
  • 1:$131.3000
MRFE8VP8600HR5
DISTI # MRFE8VP8600HR5-ND		NXP SemiconductorsTRANS RF N-CH 600W 50V
RoHS: Compliant
Min Qty: 50
Container: Tape & Reel (TR)		Temporarily Out of Stock
  • 50:$135.6182
MRFE8VP8600HR5
DISTI # 25767387		NXP SemiconductorsTrans RF MOSFET N-CH 115V 5-Pin NI-1230H T/R25
  • 25:$128.0100
  • 10:$129.9900
  • 1:$131.3000
MRFE8VP8600HR5
DISTI # MRFE8VP8600HR5		Avnet, Inc.Trans MOSFET N-CH 115V 5-Pin NI-1230H T/R - Tape and Reel (Alt: MRFE8VP8600HR5)
RoHS: Compliant
Min Qty: 50
Container: Reel		Americas - 150
  • 50:$132.7900
  • 100:$132.4900
  • 200:$132.1900
  • 300:$131.7900
  • 500:$131.4900
MRFE8VP8600HR5
DISTI # MRFE8VP8600HR5		Avnet, Inc.Trans MOSFET N-CH 115V 5-Pin NI-1230H T/R (Alt: MRFE8VP8600HR5)
RoHS: Compliant
Min Qty: 50
Container: Tape and Reel		Asia - 0
    MRFE8VP8600HR5.
    DISTI # 23AC7247    		NXP Semiconductors140 W AVG. OVER 470-870 MHZ, 50 V RF POWER LDMOS TRANSISTOR ROHS COMPLIANT: YES0
    • 1:$132.7900
    • 100:$132.4900
    • 200:$132.1900
    • 300:$131.7900
    • 500:$131.4900
    MRFE8VP8600HR5
    DISTI # 841-MRFE8VP8600HR5    		NXP SemiconductorsRF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
    RoHS: Compliant    		0
    • 1:$156.9200
    • 5:$153.8700
    • 10:$148.7900
    • 25:$142.4900
    • 50:$140.5400
    MRFE8VP8600HR5Freescale SemiconductorRF Power Field-Effect Transistor
    RoHS: Not Compliant    		225
    • 1000:$129.3000
    • 500:$136.1100
    • 100:$141.7000
    • 25:$147.7700
    • 1:$159.1400
    MRFE8VP8600HR5
    DISTI # MRFE8VP8600HR5    		NXP SemiconductorsRF POWER TRANSISTOR
    RoHS: Compliant    		26
    • 1:$164.3200
    • 10:$151.8800
    • 25:$147.4100
    MRFE8VP8600HR5
    DISTI # C1S233100416356    		NXP SemiconductorsMOSFETs
    RoHS: Not Compliant    		25
    • 25:$128.1100
    • 10:$199.3100
    • 1:$216.4900
    영상 부분 # 설명
    MRFE8VP8600HR5

    Mfr.#: MRFE8VP8600HR5

    OMO.#: OMO-MRFE8VP8600HR5

    		 RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
    MRFE8VP8600HSR5

    Mfr.#: MRFE8VP8600HSR5

    OMO.#: OMO-MRFE8VP8600HSR5

    		 RF MOSFET Transistors 140 W Avg. over 470-870 MHz, 50 V RF Power LDMOS Transistor
    MRFE8VP8600HSR5

    Mfr.#: MRFE8VP8600HSR5

    OMO.#: OMO-MRFE8VP8600HSR5-NXP-SEMICONDUCTORS

    		 BROADBAND RF POWER LDMOS TRANSIS
    MRFE8VP8600HR5

    Mfr.#: MRFE8VP8600HR5

    OMO.#: OMO-MRFE8VP8600HR5-NXP-SEMICONDUCTORS

    		 RF MOSFET Transistors Broadband RF Power LDMOS Transistor, 470-860 MHz, 600 W, 50 V
    유효성
    재고:
    Available
    주문 시:
    4000
    수량 입력:
    MRFE8VP8600HR5의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$156.92
    US$156.92
    5
    US$153.87
    US$769.35
    10
    US$148.79
    US$1 487.90
    25
    US$142.49
    US$3 562.25
    2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
    시작
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