IPP65R110CFDAAKSA1

IPP65R110CFDAAKSA1
Mfr. #:
IPP65R110CFDAAKSA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 650V 31.2A TO220-3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPP65R110CFDAAKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPP65R110CFDAAKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-220-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
650 V
Id - 연속 드레인 전류:
31.2 A
Rds On - 드레인 소스 저항:
110 mOhms
구성:
하나의
상표명:
쿨모스
포장:
튜브
키:
15.65 mm
길이:
10 mm
시리즈:
쿨모스 CFDA
트랜지스터 유형:
1 N-Channel
너비:
4.4 mm
상표:
인피니언 테크놀로지스
상품 유형:
MOSFET
공장 팩 수량:
500
하위 카테고리:
MOSFET
부품 번호 별칭:
IPP65R110CFDA IPP65R11CFDAXK SP000895234
단위 무게:
0.211644 oz
Tags
IPP65R110CFDA, IPP65R11, IPP65R1, IPP65, IPP6, IPP
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 650V 31.2A Automotive 3-Pin(3+Tab) TO-220 Tube
***et Europe
Trans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube
*** Source Electronics
Metal Oxide Semiconductor Field Effect Transistor
***i-Key
MOSFET N-CH 650V TO-220-3
***ronik
N-CH 650V 31,2A 110mOhm TO220-3
***ark
MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, AEC-Q101, N-CH, 650V, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:31.2A; Drain Source Voltage Vds:650V; On Resistance Rds(on):0.099ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:277.8W; Transistor Case Style:TO-220; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:CoolMOS Series; Automotive Qualification Standard:AEC-Q101; SVHC:No SVHC (15-Jan-2019)
***nell
MOSFET, AEC-Q101, CAN N, 650V, TO-220-3; Polarità Transistor:Canale N; Corrente Continua di Drain Id:31.2A; Tensione Drain Source Vds:650V; Resistenza di Attivazione Rds(on):0.099ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:4V; Dissipazione di Potenza Pd:277.8W; Modello Case Transistor:TO-220; No. di Pin:3Pin; Temperatura di Esercizio Max:150°C; Gamma Prodotti:CoolMOS Series; Standard di Qualifica Automotive:AEC-Q101; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (15-Jan-2019)
***ineon
650V CoolMOS CFDA is Infineon's second generation of market leading automotive qualified high voltage CoolMOS MOSFET. In addition to the well-known attributes of high quality and reliability required by the automotive industry, the new CoolMOS CFDA series provides now also an integrated fast body diode. | Summary of Features: First 650V automotive qualified technology with integrated fast body diode on the market; Limited voltage overshoot during hard commutation self limiting di/dt and dv/dt; Low gate charge value Q g; Low Q rr at repetitive commutation on body diode & lowQ oss; Reduced turn on and turn of delay times; Compliant to AEC Q101 standard | Benefits: Increased safety margin due to higher breakdown voltage; Reduced EMI appearance and easy to design in; Better light load efficiency; Lower switching losses; Higher switching frequency and/or higher duty cycle possible; High quality and reliability | Target Applications: Unidirectional and bidirectional DC-DC converter; Battery charger; HID lighting
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
부분 # 제조 설명 재고 가격
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1-ND
Infineon Technologies AGMOSFET N-CH 650V TO-220-3
RoHS: Compliant
Min Qty: 1
Container: Tube
458In Stock
  • 1000:$3.8455
  • 500:$4.5597
  • 100:$5.6310
  • 10:$6.8670
  • 1:$7.6900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDAAKSA1
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube - Rail/Tube (Alt: IPP65R110CFDAAKSA1)
RoHS: Compliant
Min Qty: 500
Container: Tube
Americas - 0
  • 500:$3.4900
  • 1000:$3.3900
  • 2000:$3.2900
  • 3000:$3.1900
  • 5000:$3.0900
IPP65R110CFDAAKSA1
DISTI # IPP65R110CFDA
Infineon Technologies AGTrans MOSFET N-CH 650V 31.2A 3-Pin TO-220 Tube (Alt: IPP65R110CFDA)
RoHS: Compliant
Min Qty: 500
Container: Tube
Asia - 0
    IPP65R110CFDAAKSA1
    DISTI # 726-IPP65R110CFDAAKS
    Infineon Technologies AGMOSFET N-Ch 650V 31.2A TO220-3
    RoHS: Compliant
    263
    • 1:$6.6100
    • 10:$5.6200
    • 100:$4.8700
    • 250:$4.6200
    • 500:$4.1500
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    MOSFET N-CH 600V 29A TO220
    유효성
    재고:
    736
    주문 시:
    2719
    수량 입력:
    IPP65R110CFDAAKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$6.61
    US$6.61
    10
    US$5.61
    US$56.10
    100
    US$4.87
    US$487.00
    250
    US$4.62
    US$1 155.00
    500
    US$4.14
    US$2 070.00
    1000
    US$3.49
    US$3 490.00
    2500
    US$3.32
    US$8 300.00
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