SIZF300DT-T1-GE3

SIZF300DT-T1-GE3
Mfr. #:
SIZF300DT-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIZF300DT-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIZF300DT-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAIR3x3-4
채널 수:
2 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
30 V
Id - 연속 드레인 전류:
75 A, 141 A
Rds On - 드레인 소스 저항:
4.5 mOhms, 1.84 mOhms
Vgs th - 게이트 소스 임계 전압:
1 V, 1.1 V
Vgs - 게이트 소스 전압:
- 16 V, 20 V, - 12 V, 16 V
Qg - 게이트 차지:
22 nC, 62 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
74 W
구성:
듀얼
채널 모드:
상승
상표명:
TrenchFET
포장:
시리즈:
사이즈
트랜지스터 유형:
2 N-Channel
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
60 S, 90 S
가을 시간:
7 ns, 12 ns
상품 유형:
MOSFET
상승 시간:
40 ns, 53 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
23 ns, 30 ns
일반적인 켜기 지연 시간:
17 ns, 25 ns
Tags
SIZF, SiZ
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
SkyFET® Power MOSFETs
Vishay Siliconix's SkyFET® Power MOSFETs are MOSFETs that integrate a MOSFET and a schottky diode and are ideal for increasing efficiency at light loads and higher frequencies, thus reducing power losses in servers, notebooks, and VRMs. Their low VF and Qrr provide an advantage over standard trench MOSFETs. Features include increased efficiency for DC-DC converter applications, reduced space and solution cost by eliminating external schottky diodes, ideal low-side switch for synchronous rectification, and reduces power losses linked to the body diode of the MOSFET. Typical applications include POL, synchronous rectification, VRM, synchronous buck low side for core voltages, and graphics cards.
Integrated MOSFET Solutions
Vishay Integrated MOSFET Solutions combine components into a single monolithic chip to increase power density, increase efficiency, simplify design, and reduce Bill of Material (BOM) costs. These single- and multi-die MOSFETs integrate features such as Schottky Barrier diodes and ESD protection. These MOSFETs feature low ON-resistance N- and P-channel TrenchFET® technologies and low thermal resistance. 
PowerPAIR® Dual-MOSFETs
Vishay PowerPAIR® Dual-MOSFETs combine optimized combinations of MOSFETs in one compact package. The co-packaged PowerPAIR Dual-MOSFETs use less space and offer increased performance over separate discretes. By having the two MOSFETs already connected inside the PowerPAIR package, layouts are made easier and parasitic inductance from PCB traces are reduced, increasing efficiency. 
부분 # 제조 설명 재고 가격
SIZF300DT-T1-GE3
DISTI # V99:2348_22587811
Vishay IntertechnologiesDual N-Channel 30 V (D-S) MOSFET with Schottky Diode PowerPAIR F 3.3 x 3.3 1G SG 2 mil , 1.84 m @ 100
  • 3000000:$0.5350
  • 600000:$0.5358
  • 60000:$0.5365
  • 6000:$0.5366
SIZF300DT-T1-GE3
DISTI # SIZF300DT-T1-GE3TR-ND
Vishay SiliconixMOSFET DUAL N-CHAN 30V PPAIR 3X3
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
On Order
  • 15000:$0.4906
  • 6000:$0.5097
  • 3000:$0.5365
SIZF300DT-T1-GE3
DISTI # SIZF300DT-T1-GE3CT-ND
Vishay SiliconixMOSFET DUAL N-CHAN 30V PPAIR 3X3
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
Temporarily Out of Stock
  • 1000:$0.5921
  • 500:$0.7500
  • 100:$0.9079
  • 10:$1.1650
  • 1:$1.3000
SIZF300DT-T1-GE3
DISTI # SIZF300DT-T1-GE3DKR-ND
Vishay SiliconixMOSFET DUAL N-CHAN 30V PPAIR 3X3
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
Temporarily Out of Stock
  • 1000:$0.5921
  • 500:$0.7500
  • 100:$0.9079
  • 10:$1.1650
  • 1:$1.3000
SIZF300DT-T1-GE3
DISTI # SIZF300DT-T1-GE3
Vishay Intertechnologies- Tape and Reel (Alt: SIZF300DT-T1-GE3)
RoHS: Compliant
Min Qty: 6000
Container: Reel
Americas - 0
  • 60000:$0.4669
  • 30000:$0.4799
  • 18000:$0.4939
  • 12000:$0.5149
  • 6000:$0.5309
SIZF300DT-T1-GE3
DISTI # 81AC3510
Vishay IntertechnologiesDUAL N-CH 30-V (D-S) MOSFET W/SCHOTT0
  • 10000:$0.4640
  • 6000:$0.4750
  • 4000:$0.4930
  • 2000:$0.5480
  • 1000:$0.6030
  • 1:$0.6280
SIZF300DT-T1-GE3
DISTI # 78-SIZF300DT-T1-GE3
Vishay IntertechnologiesMOSFET 30V Vds,16/-12V Vgs PowerPAIR F 3.3x3.3
RoHS: Compliant
0
  • 1:$1.2700
  • 10:$1.0500
  • 100:$0.8070
  • 500:$0.6940
  • 1000:$0.5480
  • 3000:$0.5110
영상 부분 # 설명
SIZF300DT-T1-GE3

Mfr.#: SIZF300DT-T1-GE3

OMO.#: OMO-SIZF300DT-T1-GE3

MOSFET 30V Vds; 16/-12V Vgs PowerPAIR F 3.3x3.3
SIZF300DT-T1-GE3

Mfr.#: SIZF300DT-T1-GE3

OMO.#: OMO-SIZF300DT-T1-GE3-VISHAY

MOSFET DUAL N-CHAN 30V PPAIR 3X3
유효성
재고:
Available
주문 시:
3500
수량 입력:
SIZF300DT-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$1.27
US$1.27
10
US$1.05
US$10.50
100
US$0.81
US$80.70
500
US$0.69
US$347.00
1000
US$0.55
US$548.00
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