A3G20S250-01SR3

Mfr. #:: A3G20S250-01SR3
제조사:: NXP Semiconductors
설명:: RF MOSFET Transistors Airfast RF Power GaN Transistor, 1800-2200 MHz, 45 W Avg., 48 V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: A3G20S250-01SR3 데이터 시트
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추가 정보:: A3G20S250-01SR3 추가 정보 A3G20S250-01SR3 Product Details

제품 속성
속성 값

제조사:: NXP

제품 카테고리:: RF MOSFET 트랜지스터

트랜지스터 극성:: N-채널

기술:: GaN Si

Id - 연속 드레인 전류:: 250 mA

Vds - 드레인 소스 항복 전압:: 150 V

얻다:: 18.2 dB

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

장착 스타일:: SMD/SMT

패키지/케이스:: NI-400S-2

포장:: 릴

동작 주파수:: 1800 MHz to 2200 MHz

시리즈:: A3G20S250

유형:: RF 전력 MOSFET

상표:: NXP반도체

채널 수:: 1 Channel

상품 유형:: RF MOSFET 트랜지스터

공장 팩 수량:: 250

하위 카테고리:: MOSFET

Vgs - 게이트 소스 전압:: - 8 V

Vgs th - 게이트 소스 임계 전압:: - 2.3 V

부품 번호 별칭:: 935377832118

Tags: A3G

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

A3G20S250-01SR3 추가 정보

RF Power GaN Portfolio: NXP Semiconductors RF Power Gallium Nitride (GaN) Portfolio provides state of the art linearizability and RF performance that enables 5G deployment. These transistors offer solutions for cellular infrastructure, defense, and industrial markets. The GaN transistors provide wideband performance and high-frequency operation. These transistors feature end-to-end applications, solution support, and high-volume production. The GaN transistors come with advanced GaN on SiC technology that offers high power density. These transistors are designed for cellular base station applications.

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