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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| BSC886N03LS G DISTI # 30579819 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1CT-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT) | 4185In Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1DKR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 1 Container: Digi-Reel® | 4185In Stock |
|
| BSC886N03LSGATMA1 DISTI # BSC886N03LSGATMA1TR-ND | Infineon Technologies AG | MOSFET N-CH 30V 65A TDSON-8 RoHS: Compliant Min Qty: 5000 Container: Tape & Reel (TR) | Temporarily Out of Stock |
|
| BSC886N03LS G DISTI # C1S322000282117 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R RoHS: Compliant | 10000 |
|
| BSC886N03LS G DISTI # BSC886N03LS G | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R (Alt: BSC886N03LS G) RoHS: Compliant Min Qty: 5000 Container: Tape and Reel | Asia - 0 | |
| BSC886N03LSGXT DISTI # BSC886N03LSGATMA1 | Infineon Technologies AG | Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R - Tape and Reel (Alt: BSC886N03LSGATMA1) RoHS: Compliant Min Qty: 5000 Container: Reel | Americas - 0 |
|
| BSC886N03LSGATMA1 DISTI # 97Y1253 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8,Transistor Polarity:N Channel,Continuous Drain Current Id:65A,Drain Source Voltage Vds:30V,On Resistance Rds(on):0.005ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.2V,Power , RoHS Compliant: Yes | 4977 |
|
| BSC886N03LS G | Infineon Technologies AG | RoHS: Not Compliant | 5000 |
|
| BSC886N03LSG | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 9609 |
|
| BSC886N03LSGATMA1 | Infineon Technologies AG | Power Field-Effect Transistor, 13A I(D), 30V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | 5000 |
|
| BSC886N03LS G DISTI # 726-BSC886N03LSG | Infineon Technologies AG | MOSFET N-Ch 30V 65A TDSON-8 RoHS: Compliant | 0 |
|
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4977 |
|
| BSC886N03LSGATMA1 DISTI # 2617422 | Infineon Technologies AG | MOSFET, N-CH, 30V, 65A, PG-TDSON-8 RoHS: Compliant | 4977 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: BSC883N03LS G OMO.#: OMO-BSC883N03LS-G |
MOSFET N-Ch 34V 98A TDSON-8 |
|
|
Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G |
MOSFET N-Ch 30V 65A TDSON-8 |
|
Mfr.#: BSC883N03LSGXT OMO.#: OMO-BSC883N03LSGXT-1190 |
Trans MOSFET N-CH 34V 17A 8-Pin TDSON EP - Tape and Reel (Alt: BSC883N03LSGATMA1) |
|
Mfr.#: BSC882N03MSGATMA1 |
MOSFET N-CH 34V 22A TDSON-8 |
|
|
Mfr.#: BSC882N03MSGXT OMO.#: OMO-BSC882N03MSGXT-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC883N03LSG OMO.#: OMO-BSC883N03LSG-1190 |
Power Field-Effect Transistor, 17A I(D), 34V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
|
|
Mfr.#: BSC884N03MS OMO.#: OMO-BSC884N03MS-1190 |
신규 및 오리지널 |
|
|
Mfr.#: BSC886N03LS G OMO.#: OMO-BSC886N03LS-G-1190 |
Trans MOSFET N-CH 30V 13A 8-Pin TDSON EP T/R |
|
|
Mfr.#: BSC886N03LSGATMA1 , TDZF |
신규 및 오리지널 |
|
|
Mfr.#: BSC883N03MS G OMO.#: OMO-BSC883N03MS-G-126 |
IGBT Transistors MOSFET N-Ch 30V 19A TDSON-8 |