FGY60T120SQDN

FGY60T120SQDN
Mfr. #:
FGY60T120SQDN
제조사:
ON Semiconductor
설명:
IGBT Transistors IGBT 1200V 60A UFS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FGY60T120SQDN 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FGY60T120SQDN 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
패키지/케이스:
TO-247-3
장착 스타일:
구멍을 통해
구성:
하나의
컬렉터-이미터 전압 VCEO 최대:
1200 V
수집기-이미터 포화 전압:
1.7 V
최대 게이트 이미터 전압:
25 V
25C에서 연속 수집기 전류:
120 A
Pd - 전력 손실:
517 W
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
포장:
튜브
연속 수집가 현재 IC 최대:
120 A
상표:
온세미컨덕터
게이트-이미터 누설 전류:
200 nA
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
Tags
FGY
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT
ON Semiconductor FGY60T120SQDN 1200V 60A Ultra Field Stop IGBT (Insulated Gate Bipolar Transistor) features a robust and cost effective Ultra Field Stop Trench construction. The FGY60T120SQDN provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The FGY60T120SQDN also features an integrated soft and fast co-packaged free wheeling diode with a low forward voltage for fast recovery.
부분 # 제조 설명 재고 가격
FGY60T120SQDN
DISTI # V99:2348_22865638
ON SemiconductorIGBT 1200V 60A UFS0
  • 450000:$4.4170
  • 225000:$4.4230
  • 45000:$5.4410
  • 4500:$7.6630
  • 450:$8.0600
FGY60T120SQDN
DISTI # FGY60T120SQDNOS-ND
ON SemiconductorIGBT 1200V 60A UFS
RoHS: Not compliant
Min Qty: 1
Container: Tube
On Order
  • 900:$5.5172
  • 450:$6.0512
  • 25:$7.2968
  • 10:$7.6530
  • 1:$8.4700
FGY60T120SQDN
DISTI # FGY60T120SQDN
ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube - Rail/Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 450
Container: Tube
Americas - 0
  • 4500:$4.0900
  • 2700:$4.1900
  • 1800:$4.2900
  • 450:$4.3900
  • 900:$4.3900
FGY60T120SQDN
DISTI # FGY60T120SQDN
ON SemiconductorTrans IGBT Chip N-CH 1200V 120A 3-Pin TO-247 Tube (Alt: FGY60T120SQDN)
RoHS: Compliant
Min Qty: 1
Container: Tube
Europe - 0
  • 500:€4.2900
  • 1000:€4.2900
  • 100:€4.3900
  • 50:€4.4900
  • 25:€4.7900
  • 10:€4.8900
  • 1:€6.0900
FGY60T120SQDN
DISTI # 85AC2840
ON SemiconductorIGBT 1200V 60A UFS0
  • 500:$4.4100
  • 250:$4.5500
  • 100:$5.4300
  • 50:$5.8300
  • 25:$6.2400
  • 10:$6.8500
  • 1:$7.6300
FGY60T120SQDN
DISTI # 863-FGY60T120SQDN
ON SemiconductorIGBT Transistors IGBT 1200V 60A UFS
RoHS: Compliant
0
  • 1:$8.0600
  • 10:$7.2800
  • 25:$6.9500
  • 100:$6.0300
  • 250:$5.7600
  • 500:$5.2500
  • 1000:$4.5700
FGY60T120SQDN
DISTI # 3010444
ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W
RoHS: Compliant
0
  • 250:$6.4100
  • 100:$7.5900
  • 50:$8.2000
  • 10:$8.8100
  • 5:$9.9700
  • 1:$10.7600
FGY60T120SQDN
DISTI # 3010444
ON SemiconductorIGBT, 1.2KV, 120A, 175DEG C, 517W0
  • 100:£4.3700
  • 50:£4.7100
  • 10:£5.0400
  • 5:£5.8400
  • 1:£6.3700
영상 부분 # 설명
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN

IGBT Transistors IGBT 1200V 60A UFS
FGY60T120SQDN

Mfr.#: FGY60T120SQDN

OMO.#: OMO-FGY60T120SQDN-ON-SEMICONDUCTOR

IGBT 1200V 60A UFS
유효성
재고:
349
주문 시:
2332
수량 입력:
FGY60T120SQDN의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$8.06
US$8.06
10
US$7.28
US$72.80
25
US$6.95
US$173.75
100
US$6.03
US$603.00
250
US$5.76
US$1 440.00
500
US$5.25
US$2 625.00
1000
US$4.57
US$4 570.00
2500
US$4.40
US$11 000.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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