SISS92DN-T1-GE3

Mfr. #:: SISS92DN-T1-GE3
제조사:: Vishay / Siliconix
설명:: MOSFET 250V Vds; +/-20V Vgs PowerPAK 1212-8S
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: SISS92DN-T1-GE3 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: SISS92DN-T1-GE3 추가 정보

제품 속성
속성 값

제조사:: 비쉐이

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PowerPAK-1212-8SH-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 250 V

Id - 연속 드레인 전류:: 12.3 A

Rds On - 드레인 소스 저항:: 173 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 16 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 65.8 W

구성:: 하나의

채널 모드:: 상승

상표명:: 트렌치펫; 파워팩

포장:: 릴

트랜지스터 유형:: 1 N-Channel

상표:: 비쉐이 / 실리콘닉스

순방향 트랜스컨덕턴스 - 최소:: 12 S

가을 시간:: 6 ns

상품 유형:: MOSFET

상승 시간:: 4 ns

공장 팩 수량:: 3000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 17 ns

일반적인 켜기 지연 시간:: 10 ns

Tags: SISS9, SISS, SIS

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

SISS92DN-T1-GE3 추가 정보

Industrial Power Solution: Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors.

TrenchFET Gen IV MOSFETs: Vishay / Siliconix TrenchFET® Gen IV MOSFETs are next-generation TrenchFET® family of power MOSFETs. These new devices utilize a new high-density design and the SiR182DP, SiR186DP, and SiSS26DN. The TrenchFET Gen IV MOSFETs offer industry-low on-resistance and low total gate charge in the PowerPAK® SO-8 and 1212-8S packages. These TrenchFET Gen IV MOSFETs feature extremely low RDS(on) that translates to lower conduction losses for reduced power consumption. The TrenchFET MOSFETs also come with space-saving PowerPAK® 1212-8 packages with similar efficiency with a third of its size. Typical applications include high power DC/DC converters, synchronous rectification, solar micro-inverters, and motor drive switch.

Market price

부분 #	제조	설명	재고	가격
SISS92DN-T1-GE3 DISTI # V72:2272_22989550	Vishay Intertechnologies	SISS92DN-T1-GE3	5520	75000:$0.4588 30000:$0.4611 15000:$0.4633 6000:$0.4655 3000:$0.4677 1000:$0.4699 500:$0.5699 250:$0.6778 100:$0.7067 50:$0.8402 25:$0.9335 10:$1.0541 1:$1.3044
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 250V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5980In Stock	1000:$0.5597 500:$0.7089 100:$0.8582 10:$1.1010 1:$1.2300
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 250V POWERPAK 1212 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5980In Stock	1000:$0.5597 500:$0.7089 100:$0.8582 10:$1.1010 1:$1.2300
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 250V POWERPAK 1212 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	15000:$0.4637 6000:$0.4818 3000:$0.5071
SISS92DN-T1-GE3 DISTI # 32725040	Vishay Intertechnologies	SISS92DN-T1-GE3	5520	15000:$0.4633 6000:$0.4655 3000:$0.4677 1000:$0.4699 500:$0.5699 250:$0.6778 100:$0.7067 50:$0.8402 25:$0.9335 15:$1.0541
SISS92DN-T1-GE3 DISTI # SISS92DN-T1-GE3	Vishay Intertechnologies	Transistor MOSFET N-CH 250V 12.3A 8-Pin PowerPAK 1212-S T/R (Alt: SISS92DN-T1-GE3) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	30000:€0.4609 18000:€0.4819 12000:€0.5449 6000:€0.6719 3000:€0.9369
SISS92DN-T1-GE3 DISTI # 99AC2832	Vishay Intertechnologies	MOSFET, N-CH, 250V, 12.3A, 150DEG C,Transistor Polarity:N Channel,Continuous Drain Current Id:12.3A,Drain Source Voltage Vds:250V,On Resistance Rds(on):0.14ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:4V,Power RoHS Compliant: Yes	30	500:$0.6490 250:$0.7340 100:$0.8750 50:$0.9640 25:$1.0700 10:$1.1800 1:$1.2500
SISS92DN-T1-GE3 DISTI # 78-SISS92DN-T1-GE3	Vishay Intertechnologies	MOSFET 250V Vds,+/-20V Vgs PowerPAK 1212-8S RoHS: Compliant	5474	1:$1.2000 10:$0.9940 100:$0.7630 500:$0.6560 1000:$0.5180 3000:$0.4830 6000:$0.4590 9000:$0.4420
SISS92DN-T1-GE3 DISTI # 3019146	Vishay Intertechnologies	MOSFET, N-CH, 250V, 12.3A, 150DEG C	34	500:£0.5760 250:£0.6550 100:£0.7340 10:£0.9690 1:£1.1900
SISS92DN-T1-GE3 DISTI # 3019146	Vishay Intertechnologies	MOSFET, N-CH, 250V, 12.3A, 150DEG C RoHS: Compliant	30	1000:$0.6380 500:$0.7860 250:$0.8610 100:$0.9360 25:$1.2100 5:$1.3200

관련 상품

영상	부분 #	설명
	Mfr.#: AD8691AKSZ-REEL7 OMO.#: OMO-AD8691AKSZ-REEL7	Precision Amplifiers Low Noise SGL CMOS RRO
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	Mfr.#: BQ25601DRTWR OMO.#: OMO-BQ25601DRTWR	Battery Management I2C controlled single cell 3-A battery charger with high input voltage and power path 24-WQFN -40 to 85
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	Mfr.#: STL3NM60N OMO.#: OMO-STL3NM60N-STMICROELECTRONICS	MOSFET N-CH 600V 0.65A POWERFLAT
	Mfr.#: STM32L433CBT6 OMO.#: OMO-STM32L433CBT6-STMICROELECTRONICS	IC MCU 32BIT 128KB FLASH 48LQFP
	Mfr.#: TACL105K010RTA OMO.#: OMO-TACL105K010RTA-AVX	Tantalum Capacitors - Solid SMD 0603 10V 1.0uF 10%

유효성

재고:: Available
주문 시:: 1988
수량 입력:

SISS92DN-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.20~~; ~~US$1.20~~

10: ~~US$0.99~~; ~~US$9.94~~

100: ~~US$0.76~~; ~~US$76.30~~

500: ~~US$0.66~~; ~~US$328.00~~

1000: ~~US$0.52~~; ~~US$518.00~~

시작

SISS9 3
SISS 45
SIS 843

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SISS92DN-T1-GE3

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes