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IPD70R600P7SAUMA1

IPD70R600P7SAUMA1
Mfr. #:
IPD70R600P7SAUMA1
제조사:
Infineon Technologies
설명:
MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPD70R600P7SAUMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IPD70R600P7SAUMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
TO-252-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
700 V
Id - 연속 드레인 전류:
8.5 A
Rds On - 드레인 소스 저항:
490 mOhms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
16 V
Qg - 게이트 차지:
10.5 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
43.1 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
릴
키:
2.3 mm
길이:
6.5 mm
시리즈:
CoolMOS P7
트랜지스터 유형:
1 N-Channel
너비:
6.22 mm
상표:
인피니언 테크놀로지스
가을 시간:
23 ns
습기에 민감한:
네
상품 유형:
MOSFET
상승 시간:
5.5 ns
공장 팩 수량:
2500
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
63 ns
일반적인 켜기 지연 시간:
14 ns
부품 번호 별칭:
IPD70R600P7S SP001491636
단위 무게:
0.011993 oz
Tags
IPD70R600P, IPD70R6, IPD70R, IPD70, IPD7, IPD
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
Single N-Channel 700 V 600 mOhm 10.5 nC CoolMOS™ Power Mosfet - DPAK
***ark
Mosfet, N-Ch, 700V, 8.5A, 150Deg C/43.1W; Transistor Polarity:n Channel; Drain Source Voltage Vds:700V; Continuous Drain Current Id:8.5A; On Resistance Rds(On):0.49Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes
***ineon
Developed to serve todays and especially tomorrows trends in flyback topologies the new 700V CoolMOS P7 series addresses the low power SMPS market, such as mobile phone chargers or notebook adapters by offering fundamental performance gains compared to superjunction technologies used today. By combining customers feedback with over 20 years of superjunction MOSFET experience, 700V CoolMOS P7 enables best fit for target applications in terms of: | Summary of Features: Extremely low FOM R DS(on) x E oss; lower Q g, E on and E off; Highly performant technology Low switching losses (E oss) Highly efficient Excellent thermal behavior; Allowing high speed switching; Integrated protection Zener diode; Optimized V (GS)th of 3V with very narrow tolerance of 0.5V; Finely graduated portfolio | Benefits: Cost competitive technology; Up to 2.4% efficiency gain and 12K lower device temperature compared to C6 technology; Further efficiency gain at higher switching speed; Supporting less magnetic size with lower BOM costs; High ESD ruggedness up to HBM Class 2 level; Easy to drive and design-in; Enabler for smaller form factors and high power density designs; Excellent choice in selecting the best fitting product | Target Applications: Charger; Adapter; TV; Lighting; Audio; Aux power
CoolMOS™ 7 Superjunction MOSFETs
Infineon Technologies CoolMOS™ 7 Superjunction MOSFETs set new standards for energy efficiency, power density and ease of use. CoolMOS 7 technology is optimized for specific applications with innovative package concepts and various technologies. CoolMOS 7 MOSFETS are ideal for applications like making electric vehicle charging stations smaller with higher outputs resulting in faster car charging. Thanks to CoolMOS 7, new generations of adapters and chargers are smaller, lighter and more efficient. With CoolMOS 7, engineers can make renewable energy systems cheaper and more efficient.
700V CoolMOS™ P7 MOSFETs
Infineon Technologies 700V CoolMOS™ P7 MOSFETs feature a revolutionary technology for high voltage power MOSFETs. The 700V are designed according to the superjunction (SJ) principle and pioneered by Infineon. The latest 700V CoolMOS P7 are an optimized platform tailored to target cost sensitive applications in consumer markets like chargers, adapters, lighting, TVs and more. The new series provides all the benefits of a fast switching Superjunction MOSFET, combined with an excellent price/performance ratio and state of the art ease-of-use level. The technology meets highest efficiency standards and supports high power density, enabling customers going towards very slim designs.
CoolMOS™ Power Transistors
Infineon CoolMOS™ Power Transistors use the revolutionary CoolMOS™ technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOS™ C6 and E6 power transistor series combine the experience of the leading SJ MOSFET supplier with high class innovation. The resulting devices provide all the benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
CoolMOS™ P7 MOSFETs
Infineon Technologies CoolMOS™ P7 MOSFETs deliver best-in-class price/performance ratio with excellent ease-of-use to address challenges in various applications. The 700V and 800V CoolMOS P7 power MOSFETs have been developed for flyback-based low-power SMPS applications including adapter and charger, lighting, audio SMPS, AUX and industrial power. The 600V CoolMOS P7 power MOSFETs target not only low power but also high-power SMPS applications like solar inverters, server, telecomand EV charging stations. The P7 MOSFETs are fully optimized for hard- and soft-switching topologies. 
부분 # 제조 설명 재고 가격
IPD70R600P7SAUMA1
DISTI # V72:2272_16668136		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
  • 500:$0.3545
  • 250:$0.3938
  • 100:$0.4084
  • 25:$0.6002
  • 10:$0.6016
  • 1:$0.7022
IPD70R600P7SAUMA1
DISTI # V36:1790_16668136		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R0
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1CT-ND    		Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1DKR-ND    		Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 1
    Container: Digi-Reel®    		1272In Stock
    • 1000:$0.4322
    • 500:$0.5298
    • 100:$0.7004
    • 10:$0.8950
    • 1:$1.0200
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1TR-ND    		Infineon Technologies AGMOSFET N-CH 700V 8.5A TO252-3
    RoHS: Compliant
    Min Qty: 2500
    Container: Tape & Reel (TR)    		On Order
    • 2500:$0.3841
    IPD70R600P7SAUMA1
    DISTI # 30281696    		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R2500
    • 2500:$0.2640
    IPD70R600P7SAUMA1
    DISTI # 27460734    		Infineon Technologies AGTrans MOSFET N-CH 700V 8.5A 3-Pin(2+Tab) TO-252 T/R615
    • 500:$0.3811
    • 250:$0.4233
    • 100:$0.4390
    • 25:$0.6452
    • 24:$0.6467
    IPD70R600P7SAUMA1
    DISTI # SP001491636    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: SP001491636)
    RoHS: Compliant
    Min Qty: 2500    		Europe - 50
    • 2500:€0.3979
    • 5000:€0.3249
    • 10000:€0.2979
    • 15000:€0.2749
    • 25000:€0.2559
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7SAUMA1    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET - Tape and Reel (Alt: IPD70R600P7SAUMA1)
    RoHS: Compliant
    Min Qty: 2500
    Container: Reel    		Americas - 0
    • 2500:$0.3099
    • 5000:$0.2979
    • 10000:$0.2879
    • 15000:$0.2779
    • 25000:$0.2729
    IPD70R600P7SAUMA1
    DISTI # IPD70R600P7S    		Infineon Technologies AG650V and 700V CoolMOS N-Channel Power MOSFET (Alt: IPD70R600P7S)
    RoHS: Compliant
    Min Qty: 2500    		Asia - 0
      IPD70R600P7SAUMA1
      DISTI # 16AC3358      		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252,Transistor Polarity:N Channel,Continuous Drain Current Id:8.5A,Drain Source Voltage Vds:700V,On Resistance Rds(on):0.49ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes2863
      • 1000:$0.3450
      • 500:$0.3740
      • 250:$0.4020
      • 100:$0.4310
      • 50:$0.5100
      • 25:$0.5890
      • 10:$0.6680
      • 1:$0.8000
      IPD70R600P7SAUMA1
      DISTI # 726-IPD70R600P7AUMA1      		Infineon Technologies AGMOSFET
      RoHS: Compliant      		4722
      • 1:$0.8000
      • 10:$0.6680
      • 100:$0.4310
      • 1000:$0.3450
      IPD70R600P7SAUMA1
      DISTI # 2750412      		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant      		2863
      • 100:£0.4150
      • 25:£0.6580
      • 5:£0.7230
      IPD70R600P7SAUMA1
      DISTI # 2750412      		Infineon Technologies AGMOSFET, N-CH, 700V, 8.5A, TO-252
      RoHS: Compliant      		2863
      • 1000:$0.5800
      • 500:$0.7250
      • 100:$0.9780
      • 10:$1.2700
      • 1:$1.4600
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      유효성
      재고:
      Available
      주문 시:
      1986
      수량 입력:
      IPD70R600P7SAUMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$0.80
      US$0.80
      10
      US$0.67
      US$6.68
      100
      US$0.43
      US$43.10
      1000
      US$0.34
      US$345.00
      2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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