SCT3105KLHRC11

SCT3105KLHRC11
Mfr. #:
SCT3105KLHRC11
제조사:
Rohm Semiconductor
설명:
MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SCT3105KLHRC11 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SCT3105KLHRC11 추가 정보
제품 속성
속성 값
제조사:
로옴 반도체
제품 카테고리:
MOSFET
RoHS:
Y
기술:
SiC
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247N-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1200 V
Id - 연속 드레인 전류:
24 A
Rds On - 드레인 소스 저항:
105 mOhms
Vgs th - 게이트 소스 임계 전압:
2.7 V
Vgs - 게이트 소스 전압:
- 4 V, 22 V
Qg - 게이트 차지:
51 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
Pd - 전력 손실:
134 W
구성:
하나의
채널 모드:
상승
포장:
튜브
시리즈:
SCT3x
트랜지스터 유형:
1 N-Channel
상표:
로옴 반도체
순방향 트랜스컨덕턴스 - 최소:
3.4 S
가을 시간:
17 ns
상품 유형:
MOSFET
상승 시간:
27 ns
공장 팩 수량:
30
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
31 ns
일반적인 켜기 지연 시간:
17 ns
Tags
SCT31, SCT3, SCT
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
Silicon Carbide (SiC) Power Devices
ROHM Semiconductor SiC Power Devices deliver 10x the dielectric breakdown field strength, 3x the bandgap, and 3x the thermal conductivity of conventional silicon solutions. This translates to lower switching loss, lower ON resistance, and support for high-temperature operation, making it possible to minimize power loss along with module size. SiC also allows designers to use fewer components, further reducing design complexity.
SCT3x 3rd Generation SiC Trench MOSFETs
ROHM Semiconductor® SCT3x Series SiC Trench MOSFETs utilize a proprietary trench gate structure that reduces ON resistance by 50% and input capacitance by 35% compared with planar-type SiC MOSFETs. This results in significantly lower switching loss and faster switching speeds, improving efficiency operation while reducing power loss in a variety of equipment. The lineup includes 650V and 1200V variants for broad applicability.
N-Channel SiC Power MOSFETs
ROHM Semiconductor N-Channel SiC (Silicon Carbide) Power MOSFETs feature no tail current during switching, resulting in faster operation and reduced switching loss. In addition, low ON resistance minimizes power dissipation and provides greater energy savings.
AEC-Q101 SiC Power MOSFETs
ROHM Semiconductor AEC-Q101 SiC Power MOSFETs are ideal for automotive and switch mode power supplies. The SiC Power MOSFETs can be used to boost switching frequency, decreasing the volumes of capacitors, reactors, and other components required. AEC-Q101 SiC Power MOSFETs offer excellent reductions in size and weight within various drive systems, such as inverters and DC-DC converters in vehicles.
부분 # 제조 설명 재고 가격
SCT3105KLHRC11
DISTI # SCT3105KLHRC11-ND
ROHM SemiconductorAUTOMOTIVE GRADE N-CHANNEL SIC P
RoHS: Compliant
Min Qty: 1
Container: Tube
450In Stock
  • 450:$13.9593
  • 25:$16.6612
  • 10:$17.3820
  • 1:$18.9100
SCT3105KLHRC11
DISTI # 02AH4687
ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W,Transistor Polarity:N Channel,Continuous Drain Current Id:24A,Drain Source Voltage Vds:1.2kV,On Resistance Rds(on):0.105ohm,Rds(on) Test Voltage Vgs:18V,Threshold Voltage Vgs:5.6V,PowerRoHS Compliant: Yes0
  • 500:$11.6400
  • 250:$12.0300
  • 100:$13.6800
  • 50:$14.5300
  • 25:$16.1000
  • 10:$16.5700
  • 1:$17.7200
SCT3105KLHRC11
DISTI # 755-SCT3105KLHRC11
ROHM SemiconductorMOSFET 1200V 24A 134W SIC 105mOhm TO-247N
RoHS: Compliant
450
  • 1:$18.9000
  • 10:$17.3800
  • 25:$16.6600
SCT3105KLHRC11
DISTI # TMOS2743
ROHM SemiconductorSiC N-CH 1200V 24A 105mOhm
RoHS: Compliant
Stock DE - 0Stock HK - 0Stock US - 0
  • 450:$12.3800
SCT3105KLHRC11ROHM SemiconductorMOSFET 1200V 24A 134W SIC 105mOhm TO-247N
RoHS: Compliant
Americas -
    SCT3105KLHRC11
    DISTI # 3052191
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W
    RoHS: Compliant
    0
    • 100:$19.6300
    • 50:$20.7300
    • 10:$21.9400
    • 5:$24.7400
    • 1:$25.4400
    SCT3105KLHRC11
    DISTI # 3052191
    ROHM SemiconductorMOSFET, N-CH, 1.2KV, 24A, 175DEG C, 134W0
    • 100:£11.6900
    • 50:£12.2000
    • 10:£12.7100
    • 5:£13.9100
    • 1:£15.1100
    영상 부분 # 설명
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11

    MOSFET Nch 1200V 24A SiC TO-247N
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11

    MOSFET 1200V 24A 134W SIC 105mOhm TO-247N
    SCT3105KLGC11

    Mfr.#: SCT3105KLGC11

    OMO.#: OMO-SCT3105KLGC11-ROHM-SEMI

    SCT3105KL IS AN SIC (SILICON CAR
    SCT3105KLHRC11

    Mfr.#: SCT3105KLHRC11

    OMO.#: OMO-SCT3105KLHRC11-ROHM-SEMI

    AUTOMOTIVE GRADE N-CHANNEL SIC P
    유효성
    재고:
    450
    주문 시:
    2433
    수량 입력:
    SCT3105KLHRC11의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$18.90
    US$18.90
    10
    US$17.38
    US$173.80
    25
    US$16.66
    US$416.50
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