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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| RF1S30P05SM DISTI # RF1S30P05SM | Renesas Electronics Corporation | - Bulk (Alt: RF1S30P05SM) RoHS: Not Compliant Min Qty: 410 Container: Bulk | Americas - 0 |
|
| IRF1S30P05SM | Harris Semiconductor | RoHS: Not Compliant | 400 |
|
| RF1S30P05 | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA RoHS: Not Compliant | 1040 |
|
| RF1S30P05SM | Harris Semiconductor | Power Field-Effect Transistor, 30A I(D), 50V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Not Compliant | 92 |
|
| RF1S30P05SM | Fairchild Semiconductor Corporation | 139 | ||
| RF1S30P05SM | Intersil Corporation | 45 |
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: RF1S25N06 OMO.#: OMO-RF1S25N06-1190 |
- Bulk (Alt: RF1S25N06) |
|
|
Mfr.#: RF1S30P06SM OMO.#: OMO-RF1S30P06SM-1190 |
Power Field-Effect Transistor, 30A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: RF1S40N10SM OMO.#: OMO-RF1S40N10SM-1190 |
Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: RF1S45N02LSM OMO.#: OMO-RF1S45N02LSM-1190 |
Power Field-Effect Transistor, 45A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
|
|
Mfr.#: RF1S45N03LSNM9A OMO.#: OMO-RF1S45N03LSNM9A-1190 |
신규 및 오리지널 |
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|
Mfr.#: RF1S530 OMO.#: OMO-RF1S530-1190 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET |
|
|
Mfr.#: RF1S60P03 OMO.#: OMO-RF1S60P03-1190 |
신규 및 오리지널 |
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|
Mfr.#: RF1S60P03SM OMO.#: OMO-RF1S60P03SM-1190 |
MOSFET Transistor, P-Channel, TO-263AB |
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Mfr.#: RF1S640SM9A OMO.#: OMO-RF1S640SM9A-1190 |
MOSFET Transistor, N-Channel, TO-263AB |
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|
Mfr.#: RF1S70N06DPAK OMO.#: OMO-RF1S70N06DPAK-1190 |
신규 및 오리지널 |