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IXFN66N85X

IXFN66N85X
Mfr. #:
IXFN66N85X
제조사:
Littelfuse
설명:
MOSFET 850V Ultra Junction X-Class Pwr MOSFET
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFN66N85X 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFN66N85X DatasheetIXFN66N85X Datasheet (P4-P5)
ECAD Model:
추가 정보:
IXFN66N85X 추가 정보
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
섀시 마운트
패키지/케이스:
SOT-227-4
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
850 V
Id - 연속 드레인 전류:
65 A
Rds On - 드레인 소스 저항:
65 mOhms
Vgs th - 게이트 소스 임계 전압:
3.5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
230 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
830 mW
구성:
하나의
채널 모드:
상승
상표명:
HiPerFET
포장:
튜브
트랜지스터 유형:
1 N-Channel
상표:
익시스
순방향 트랜스컨덕턴스 - 최소:
25 S
가을 시간:
20 ns
상품 유형:
MOSFET
상승 시간:
48 ns
공장 팩 수량:
10
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
105 ns
일반적인 켜기 지연 시간:
40 ns
단위 무게:
1.058219 oz
Tags
IXFN6, IXFN, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 850V 65A 4-Pin SOT-227B
***ure Electronics
MOSFET 850V Ultra Junction X-Class Pwr MOSFET
***i-Key
MOSFET N-CH 850V 65A SOT227B
X-Class 850V - 1000V Power MOSFETs with HiPerFET™
IXYS X-Class 850V-1000V Power MOSFETs with HiPerFET™ with fast body diodes are rugged devices that display the lowest on-state resistances in the industry. This enables a very high power density in high-voltage power conversion applications. Developed using the charge compensation principle and proprietary process technology, these devices exhibit low gate charges and superior dv/dt performance. In addition, thanks to the fast soft-recovery body diode, these ultra-junction MOSFETs help reduce switching losses and Electromagnetic Interference (EMI).
Electrical Vehicle DC Fast Chargers
DC charging stations are designed to convert the electrical grid’s AC power into DC power that can then be fed directly into a vehicle’s battery system for fast charging – in 30 minutes or less. Because the conversion from AC to DC power is being done in the charging station, these units can provide higher levels of power (50kW to 350kW and beyond) to the vehicle compared to AC charging stations. Working with tens to hundreds of kilowatts of power, efficient conversion, reliability of the system, and user safety are critical.
Ultra Junction MOSFETs
IXYS Ultra Junction MOSFETs feature low RDS(on) and low Qg in low inductance industry standard packages. These devices enable high power density, easy mounting, and space-saving opportunities. The ultra junction MOSFETs are ideal solutions in SMPS, DC-DC converters, PFC circuits, AC and DC motor drives, and robotics/servo controls.
부분 # 제조 설명 재고 가격
IXFN66N85X
DISTI # IXFN66N85X-ND		IXYS Corporation850V/65A ULTRA JUNCTION X-CLASS
RoHS: Compliant
Min Qty: 1
Container: Tube		20In Stock
  • 100:$25.9120
  • 30:$27.8800
  • 10:$30.3400
  • 1:$32.8000
IXFN66N85X
DISTI # 747-IXFN66N85X		IXYS CorporationMOSFET 850V Ultra Junction X-Class Pwr MOSFET
RoHS: Compliant		0
  • 1:$32.8000
  • 5:$31.1600
  • 10:$30.3400
  • 25:$27.8800
  • 50:$26.6900
  • 100:$25.9100
  • 200:$23.7800
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유효성
재고:
30
주문 시:
2013
수량 입력:
IXFN66N85X의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$32.80
US$32.80
5
US$31.16
US$155.80
10
US$30.34
US$303.40
25
US$27.88
US$697.00
50
US$26.69
US$1 334.50
100
US$25.91
US$2 591.00
200
US$23.78
US$4 756.00
500
US$22.63
US$11 315.00
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