T2G6003028-FL

T2G6003028-FL
Mfr. #:
T2G6003028-FL
제조사:
Qorvo
설명:
RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
T2G6003028-FL 데이터 시트
배달:
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지불:
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ECAD Model:
추가 정보:
T2G6003028-FL 추가 정보
제품 속성
속성 값
제조사
트라이퀸트(Qorvo)
제품 카테고리
트랜지스터 - FET, MOSFET - 단일
시리즈
T2G
포장
쟁반
부분 별칭
1100007
기술
GaN SiC
트랜지스터형
헴트
Tags
T2G6003028-F, T2G6003, T2G6, T2G
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***W
RF Power Transistor, DC to 6 GHz, 30 W, 14 dB, 28 V, GaN
T2G GaN HEMT Transistors
QorvoT2G GaN HEMT Transistors are 15W to 30W (P3dB) discrete GaN on SiC HEMT which operate from DC to 3.5GHz and 6.0GHz. These devices are constructed with Qorvo's proven TQGaN25 process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can potentially lower system costs in terms of fewer amplifier line-ups and lower thermal management costs.Learn More
QPD GaN RF Transistors
Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.
부분 # 제조 설명 재고 가격
T2G6003028-FL
DISTI # 772-T2G6003028-FL
QorvoRF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
RoHS: Compliant
108
  • 1:$157.9200
  • 25:$142.5200
영상 부분 # 설명
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6003028-FS

Mfr.#: T2G6003028-FS

OMO.#: OMO-T2G6003028-FS

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flangeless
T2G6001528-Q3

Mfr.#: T2G6001528-Q3

OMO.#: OMO-T2G6001528-Q3-318

RF JFET Transistors DC-6.0GHz 18 Watt 28V GaN
T2G6003028-FL

Mfr.#: T2G6003028-FL

OMO.#: OMO-T2G6003028-FL-318

RF JFET Transistors DC-6.0GHz 30 Watt 28V GaN Flanged
T2G6001528-SG

Mfr.#: T2G6001528-SG

OMO.#: OMO-T2G6001528-SG-318

RF JFET Transistors DC-6.0GHz 15 Watt 28V GaN
T2G6001528-SG-EVB

Mfr.#: T2G6001528-SG-EVB

OMO.#: OMO-T2G6001528-SG-EVB-1152

RF Development Tools
T2G6000528-Q3, EVAL BOAR

Mfr.#: T2G6000528-Q3, EVAL BOAR

OMO.#: OMO-T2G6000528-Q3-EVAL-BOAR-1190

신규 및 오리지널
T2G6000528-XCC-1-Q3

Mfr.#: T2G6000528-XCC-1-Q3

OMO.#: OMO-T2G6000528-XCC-1-Q3-1190

신규 및 오리지널
T2G6003028-FL-EVB

Mfr.#: T2G6003028-FL-EVB

OMO.#: OMO-T2G6003028-FL-EVB-1190

신규 및 오리지널
T2G6003028-FS EVAL BOARD

Mfr.#: T2G6003028-FS EVAL BOARD

OMO.#: OMO-T2G6003028-FS-EVAL-BOARD-1152

RF Development Tools DC-6.0GHz 30 Watt 28V GaN FS Eval Brd
유효성
재고:
Available
주문 시:
4500
수량 입력:
T2G6003028-FL의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$213.78
US$213.78
10
US$203.09
US$2 030.91
100
US$192.40
US$19 240.20
500
US$181.71
US$90 856.50
1000
US$171.02
US$171 024.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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