IPB042N10N3GATMA1

Mfr. #:: IPB042N10N3GATMA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPB042N10N3GATMA1 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: IPB042N10N3GATMA1 추가 정보

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: PG-TO-263-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 100 V

Id - 연속 드레인 전류:: 100 A

Rds On - 드레인 소스 저항:: 4.2 mOhms

Vgs th - 게이트 소스 임계 전압:: 2 V

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 88 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 175 C

Pd - 전력 손실:: 214 W

구성:: 하나의

채널 모드:: 상승

상표명:: 옵티모스

포장:: 릴

키:: 4.4 mm

길이:: 10 mm

시리즈:: OptiMOS 3

트랜지스터 유형:: 1 N-Channel

너비:: 9.25 mm

상표:: 인피니언 테크놀로지스

순방향 트랜스컨덕턴스 - 최소:: 73 S

가을 시간:: 14 ns

상품 유형:: MOSFET

상승 시간:: 59 ns

공장 팩 수량:: 1000

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 48 ns

일반적인 켜기 지연 시간:: 27 ns

부품 번호 별칭:: G IPB042N10N3 IPB42N1N3GXT SP000446880

단위 무게:: 0.139332 oz

Tags: IPB042N10N3GA, IPB042N10N3G, IPB042N10N3, IPB042N1, IPB042, IPB04, IPB0, IPB

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPB042N10N3GATMA1 설명

***p One Stop: Trans MOSFET N-CH 100V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***ure Electronics: Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK

***nell: MOSFET, N CH, 100V, 100A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0036ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

*** Source Electronics: Trans MOSFET N-CH 100V 110A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 110A D2PAK

***ure Electronics: SUM110N10 Series 100 V 110 A 3.75 W SMT N-Channel Mosfet - TO-263 (D2PAK)

***roFlash: Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

***ark: Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:110A; On Resistance Rds(On):0.0095Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V Rohs Compliant: Yes

***ow.cn: Trans MOSFET N-CH 80V 100A Automotive 3-Pin(2+Tab) D2PAK T/R

***ark: MOSFET, N-CH, 80V, 100A, 175DEG C, 214W; Channel Type:N Channel; Drain Source Voltage Vds:80V; Continuous Drain Current Id:100A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2.8V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 80V, 100A, TO-263; Transistor Polarity: N Channel; Continuous Drain Current Id: 100A; Drain Source Voltage Vds: 80V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.8V; Power Dissipation Pd: 214W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: OptiMOS 3 Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: OptiMOS is the market leader in highly efficient solutions for power generation (e.g. solar micro inverter), power supply (e.g. server and telecom) and power consumption (e.g. electric vehicle). | Summary of Features: Optimized technology for DC-DC converters; Excellent gate charge x R DS(ON) product (FOM); Superior thermal resistance; Dual sided cooling; Low parasitic inductance; Low profile (<0,7mm); N-channel, normal level; 100% avalanche tested; Pb-free plating; RoHS compliant | Target Applications: Solar; Consumer; Telecom; Server; PC power; DC-DC; AC-DC; Adapter; SMPS; LED; Motor control

***ure Electronics: Single N-Channel 100 V 8.2 mOhm 42 nC OptiMOS Power Mosfet - D2PAK

***ow.cn: Trans MOSFET N-CH 100V 80A Automotive 3-Pin(2+Tab) D2PAK T/R

***ment14 APAC: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Source Voltage Vds:100V; On Resistance

***ineon SCT: Infineon's 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS, PG-TO263-3, RoHS

***nell: MOSFET, N CH, 100V, 80A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 80A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0072ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2.7V; Power Dissipation Pd: 125W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***ineon: The 100V OptiMOS family offers superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both R DS(on) and FOM (figure of merit). | Summary of Features: Excellent switching performance; Worlds lowest R DS(on); Very low Q g and Q gd; Excellent gate charge x R DS(on) product (FOM); RoHS compliant-halogen free; MSL1 rated 2 | Benefits: Environmentally friendly; Increased efficiency; Highest power density; Less paralleling required; Smallest board-space consumption; Easy-to-design products | Target Applications: Synchronous rectification for AC-DC SMPS; Motor control for 48V80V systems (i.e. domestic vehicles, power-tools, trucks); Isolated DC-DC converters (telecom and datacom systems; Or-ing switches and circuit breakers in 48V systems; Class D audio amplifiers; Uninterruptable power supplies (UPS)

***et: Trans MOSFET N-CH 40V 70A 3-Pin(2+Tab) TO-263

***el Electronic: Power Field-Effect Transistor, 70A I(D), 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN

***ment14 APAC: MOSFET, N CH, 70A, 40V, PG-TO263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:40V; On Resistance Rds(on):4.2mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:79W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Power Dissipation Pd:79W; Transistor Type:Power MOSFET; Voltage Vgs Max:20V

*** Source Electronics: Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK / MOSFET N-CH 100V 90A D2PAK

***ure Electronics: Single N-Channel 100 V 0.0082 O 97 nC Surface Mount Power Mosfet -TO-263 (D2PAK)

***ark: Mosfet, N Channel, 100V, 90A, To-263-3; Channel Type:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:90A; Transistor Mounting:surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:2.5V Rohs Compliant: Yes

***ment14 APAC: MOSFET, N-CH, 100V, 90A, TO-263; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:100V; On Resistance Rds(on):6.7mohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-263; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:90A; Power Dissipation Pd:300W; Voltage Vgs Max:20V

***el Electronic: VISHAY SUM70040E-GE3 MOSFET Transistor, N Channel, 120 A, 100 V, 0.0032 ohm, 10 V, 4 V

***ical: Trans MOSFET N-CH 100V 120A 3-Pin(2+Tab) D2PAK Reel

***ure Electronics: N-Channel 100 V 4 mOhm 375 W SMT ThunderFET Power Mosfet - TO-263

***ment14 APAC: MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity:N Channel; Continuous Drain Current Id:120A; Source Voltage Vds:100V; On Resistance

***ark: MOSFET, N-CH, 100V, 120A, 175DEG C, 375W; Channel Type:N Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:120A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:4V RoHS Compliant: Yes

***nell: MOSFET, N-CH, 100V, 120A, TO-263-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 100V; On Resistance Rds(on): 0.0032ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 375W; Transistor Case Style: TO-263; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited

IPB042N10N3GATMA1 추가 정보

Light Electric Vehicles (LEV): Infineon Light Electric Vehicles have world-changing potential utilizing the emission-free solution for rising megacities. LEV's apply new technology enabling greater power efficiency, smaller size, lighter weight, and lower cost solutions. LEVs cost less when compared to gasoline or battery powered EVs, making them affordable and hence attractive to emerging markets, where a transition to electrified mobility is in progress.

Market price

부분 #	제조	설명	재고	가격
IPB042N10N3GATMA1 DISTI # V72:2272_06378065	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	36	25:$1.9617 10:$1.9682 1:$2.2261
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1CT-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	6222In Stock	500:$1.8588 100:$2.3899 10:$2.9740 1:$3.2900
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1DKR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	6222In Stock	500:$1.8588 100:$2.3899 10:$2.9740 1:$3.2900
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1TR-ND	Infineon Technologies AG	MOSFET N-CH 100V 100A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR)	6000In Stock	1000:$1.4953
IPB042N10N3GATMA1 DISTI # 31049885	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	1000	1000:$1.4933
IPB042N10N3GATMA1 DISTI # 31010737	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	36	25:$1.9617 10:$1.9682 7:$2.2261
IPB042N10N3GXT DISTI # IPB042N10N3GATMA1	Infineon Technologies AG	Trans MOSFET N-CH 100V 100A 3-Pin(2+Tab) TO-263 - Tape and Reel (Alt: IPB042N10N3GATMA1) RoHS: Compliant Min Qty: 1000 Container: Reel	Americas - 1000	1000:$1.2900 2000:$1.1900 4000:$1.1900 6000:$1.1900 10000:$1.1900
IPB042N10N3GATMA1 DISTI # 47Y8047	Infineon Technologies AG	MOSFET Transistor, N Channel, 100 A, 100 V, 0.0036 ohm, 10 V, 2.7 V , RoHS Compliant: Yes	705	1:$2.7600 10:$2.3500 25:$2.1900 50:$2.0400 100:$1.8800 250:$1.7700 500:$1.6500
IPB042N10N3GATMA1	Infineon Technologies AG	Single N-Channel 100 V 4.2 mOhm 88 nC OptiMOS Power Mosfet - D2PAK RoHS: Not Compliant	1000Reel	1000:$1.2400
IPB042N10N3GATMA1	Infineon Technologies AG	Power Field-Effect Transistor, 100A I(D), 100V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB RoHS: Compliant	500	1000:$1.0000 500:$1.0500 100:$1.1000 25:$1.1400 1:$1.2300
IPB042N10N3GATMA1 DISTI # 726-IPB042N10N3GATMA	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 RoHS: Compliant	1607	1:$2.7500 10:$2.3400 100:$1.8700 500:$1.6400 1000:$1.3600 2000:$1.2600
IPB042N10N3 G DISTI # 726-IPB042N10N3G	Infineon Technologies AG	MOSFET N-Ch 100V 100A D2PAK-2 OptiMOS 3 RoHS: Compliant	830	1:$2.7600 10:$2.3500 100:$1.8800 500:$1.6500 1000:$1.3600
IPB042N10N3GATMA1 DISTI # 8275237	Infineon Technologies AG	MOSFET N-CH 100A 100V OPTIMOS3 TO263, PK	370	10:£1.5750 50:£1.3280 250:£1.1860 500:£1.0290
IPB042N10N3GATMA1 DISTI # 8275237P	Infineon Technologies AG	MOSFET N-CH 100A 100V OPTIMOS3 TO263, RL	980	50:£1.3280 250:£1.1860 500:£1.0290
IPB042N10N3GATMA1 DISTI # IPB042N10N3GATMA1	Infineon Technologies AG	Transistor: N-MOSFET,unipolar,100V,100A,214W,PG-TO263-3	778	1:$1.8961 3:$1.6261 10:$1.3077 100:$1.1371 1000:$1.0598
IPB042N10N3GATMA1 DISTI # 2443431	Infineon Technologies AG	MOSFET, N CH, 100V, 100A, TO-263-3 RoHS: Compliant	680	1:$4.3700 10:$3.7200 100:$2.9800 500:$2.6200 1000:$2.1600 2000:$2.0100 5000:$1.9400 10000:$1.8700
IPB042N10N3GATMA1 DISTI # XSFP00000153641	Infineon Technologies AG	PowerField-EffectTransistor,100AI(D),100V,0.0042ohm,1-Element,N-Channel,Silicon,Metal-oxideSemiconductorFET,TO-263AB RoHS: Compliant	1346	1000:$1.6500 1346:$1.5500
IPB042N10N3GATMA1 DISTI # 2443431	Infineon Technologies AG	MOSFET, N CH, 100V, 100A, TO-263-3 RoHS: Compliant	680	1:£2.3700 10:£1.3400 100:£1.2700 250:£1.2000 500:£1.0400
IPB042N10N3GATMA1 DISTI # C1S322000212747	Infineon Technologies AG	Trans MOSFET N-CH 100V 137A Automotive 3-Pin(2+Tab) D2PAK T/R RoHS: Compliant	36	25:$1.9617 10:$1.9682

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IPB042N10N3GATMA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes