IPB60R299CPATMA1

IPB60R299CPATMA1
Mfr. #:
IPB60R299CPATMA1
제조사:
Infineon Technologies
설명:
MOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IPB60R299CPATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
TO-263-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
11 A
Rds On - 드레인 소스 저항:
270 mOhms
Vgs th - 게이트 소스 임계 전압:
2.5 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
29 nC
최소 작동 온도:
- 40 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
96 W
구성:
하나의
채널 모드:
상승
상표명:
쿨모스
포장:
키:
4.4 mm
길이:
10 mm
시리즈:
쿨모스 CE
트랜지스터 유형:
1 N-Channel
너비:
9.25 mm
상표:
인피니언 테크놀로지스
가을 시간:
5 ns
상품 유형:
MOSFET
상승 시간:
5 ns
공장 팩 수량:
1000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
40 ns
일반적인 켜기 지연 시간:
10 ns
부품 번호 별칭:
IPB60R299CP IPB6R299CPXT SP000301161
단위 무게:
0.139332 oz
Tags
IPB60R299CPA, IPB60R29, IPB60R2, IPB60R, IPB60, IPB6, IPB
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
TransMOSFETNCH600V11AAutomotive3Pin2TabD2PAKTR
***ineon
CoolMOSCPInfineonsfifthseriesofCoolMOSisdesignedforhardandsoftswitchingtopologiesCCMPFCaswellasPWMforATXnotebookadapterPDPandLCDTVSummaryofFeaturesLowestfigureofmeritRonxQg;Ultralowgatecharge;Extremedvdtrate;UltralowRDSonultralowgatechargeveryfastswitching;Vth3VgfsveryhighinternalRgverylow;Highcurrentcapability;Significantreductionofconductionandswitchinglosses;Highpowerdensityandefficiencyforsuperiorpowerconversionsystems;BestinclasspriceperformanceratioTargetApplicationsSolar;Server;Telecom;Consumer;Adapter;PCpower
***ment14APAC
MOSFETNTO263;TransistorPolarityNChannel;ContinuousDrainCurrentId11A;DrainSourceVoltageVds650V;OnResistanceRdson299mohm;RdsonTestVoltageVgs10V;ThresholdVoltageVgsTyp3V;PowerDissipationPd96W;OperatingTemperatureRange55Cto150C;TransistorCaseStyleTO263;NoofPins3;SVHCNoSVHC19Dec2011;CurrentIdMax11A;PackageCaseTO263;PowerDissipationPd96W;TerminationTypeSMD;TransistorTypePowerMOSFET;VoltageVdsTyp650V;VoltageVgsMax20V;VoltageVgsRdsonMeasurement10V
부분 # 제조 설명 재고 가격
IPB60R299CPATMA1
DISTI # V72:2272_06378240
Infineon Technologies AGTrans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
RoHS: Compliant
270
  • 75000:$1.2870
  • 30000:$1.2900
  • 15000:$1.2930
  • 6000:$1.2950
  • 3000:$1.2980
  • 1000:$1.3000
  • 500:$1.5750
  • 250:$1.8170
  • 100:$1.8360
  • 50:$2.3140
  • 25:$2.3380
  • 10:$2.3609
  • 1:$3.0865
IPB60R299CPATMA1
DISTI # IPB60R299CPATMA1TR-ND
Infineon Technologies AGMOSFET N-CH 600V 11A TO-263
RoHS: Compliant
Min Qty: 1000
Container: Tape & Reel (TR)
Limited Supply - Call
    IPB60R299CPATMA1
    DISTI # IPB60R299CPATMA1CT-ND
    Infineon Technologies AGMOSFET N-CH 600V 11A TO-263
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)
    Limited Supply - Call
      IPB60R299CPATMA1
      DISTI # IPB60R299CPATMA1DKR-ND
      Infineon Technologies AGMOSFET N-CH 600V 11A TO-263
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®
      Limited Supply - Call
        IPB60R299CPATMA1
        DISTI # 26194980
        Infineon Technologies AGTrans MOSFET N-CH 600V 11A Automotive 3-Pin(2+Tab) D2PAK T/R
        RoHS: Compliant
        270
        • 5:$3.0865
        IPB60R299CPATMA1
        DISTI # IPB60R299CPATMA1
        Infineon Technologies AG- Bulk (Alt: IPB60R299CPATMA1)
        Min Qty: 285
        Container: Bulk
        Americas - 0
        • 855:$1.0900
        • 1425:$1.0900
        • 2850:$1.0900
        • 285:$1.1900
        • 570:$1.1900
        IPB60R299CPATMA1
        DISTI # 726-IPB60R299CPATMA1
        Infineon Technologies AGMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
        RoHS: Compliant
        638
        • 1:$2.8200
        • 10:$2.3900
        • 100:$1.9100
        • 500:$1.6700
        • 1000:$1.3900
        • 2000:$1.2900
        • 5000:$1.2400
        IPB60R299CP
        DISTI # 726-IPB60R299CP
        Infineon Technologies AGMOSFET N-Ch 600V 11A D2PAK-2 CoolMOS CP
        RoHS: Compliant
        19
        • 1:$2.8200
        • 10:$2.3900
        • 100:$1.9100
        • 500:$1.6700
        • 1000:$1.3900
        • 2000:$1.2900
        • 5000:$1.2400
        IPB60R299CPATMA1Infineon Technologies AGPower Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
        RoHS: Compliant
        4790
        • 1000:$1.1600
        • 500:$1.2200
        • 100:$1.2700
        • 25:$1.3200
        • 1:$1.4300
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        유효성
        재고:
        488
        주문 시:
        2471
        수량 입력:
        IPB60R299CPATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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