2SJ243-T1-A

Mfr. #:: 2SJ243-T1-A
제조사:: Rochester Electronics, LLC
설명:: Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 2SJ243-T1-A 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: 르네사스

제품 카테고리: IC 칩

Tags: 2SJ243-T1, 2SJ243-T, 2SJ243, 2SJ24, 2SJ2, 2SJ

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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we buy and manage excess electronic components, including excess inventory identified for disposal.
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Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

2SJ243-T1-A 설명

***ical: Trans MOSFET P-CH 30V 0.1A 3-Pin SC-75 T/R

***ser: Single MOSFET Single MOSFET Pch

***i-Key Marketplace: MOSFET P-CH 30V 100MA SC75-3 USM

***emi: N-Channel MOSFET, Enhancement Mode, 60V, 0.115A, 2Ω

***et Europe: Transistor MOSFET Array Dual N-CH 60V 0.115A 6-Pin SOT-363 T/R

***ure Electronics: N-Channel 60 V 7.5 Ohm SMT Enhancement Mode Field Effect Transistor - SOT-363

***trelec: Transistor Polarity = N-Channel / Configuration = Dual / Continuous Drain Current (Id) mA = 115 / Drain-Source Voltage (Vds) V = 60 / ON Resistance (Rds(on)) Ohm = 7.5 / Gate-Source Voltage V = 20 / Turn-OFF Delay Time ns = 20 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-363 / Pins = 6 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 200

***(Formerly Allied Electronics): SI1031R-T1-GE3 P-channel MOSFET Transistor; 100 mA; 20 V; 3-Pin SC-75A

***ure Electronics: Single P-Channel 20 V 8 Ohms Surface Mount Power Mosfet - SC-75A

***ark: Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:140Ma; On Resistance Rds(On):20Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1.2V; Msl:- Rohs Compliant: No

***nell: MOSFET, P, SC-75A; Transistor Polarity: P Channel; Continuous Drain Current Id: 140mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 20ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -1.2V; Power Dissipation Pd: 250mW; Transistor Case Style: SC-75; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (15-Jun-2015); Alternate Case Style: SOT-416; Current Id Max: -140mA; ESD HBM: 2kV; External Depth: 1.7mm; External Length / Height: 0.8mm; External Width: 1.6mm; Junction Temperature Tj Max: 150°C; Junction Temperature Tj Min: -55°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Ptot Max: 250W; Pulse Current Idm: 500mA; SMD Marking: H; Voltage Vds Typ: -20V; Voltage Vgs Max: 6V; Voltage Vgs Rds on Measurement: 1.5V; Voltage Vgs th Max: -1.2V; Voltage Vgs th Min: -0.4V

***(Formerly Allied Electronics): SI1062X-T1-GE3 N-channel MOSFET Transistor; 0.53 A; 20 V; 3-Pin SC-89

***ment14 APAC: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Source Voltage Vds:20V; On Resistance

***nell: MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity: N Channel; Continuous Drain Current Id: 530mA; Drain Source Voltage Vds: 20V; On Resistance Rds(on): 0.35ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 1V; Power Dissipation Pd: 220mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: TrenchFET Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (20-Jun-2016)

***roFlash: Mosfet; Power; N-ch; Vdss 20V; Rds(on) 5 Ohms; Id 140MA; SC-75A (SOT-416); Pd 250MW

***ure Electronics: Single N-Channel 20 V 5 Ohms Surface Mount Power Mosfet - SC-75A

*** Source Electronics: Trans MOSFET N-CH 20V 0.14A 3-Pin SC-75A T/R / MOSFET N-CH 20V 140MA SC-75A

***ment14 APAC: MOSFET ESD, N CH, 20V, 0.14A, SC89; Transistor Polarity:N Channel; Continuous Drain Current Id:140mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):5ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:250mW; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SC-89; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:140mA; Power Dissipation Pd:250mW; Voltage Vgs Max:6V

***emi: P-Channel PowerTrench® MOSFET, 2.5V Specified, -1.2 A, 180 mΩ

***ment14 APAC: MOSFET, P; Transistor Polarity:P Channel; Continuous Drain Current Id:1.2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):187mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:900mV; Power Dissipation Pd:750mW; Transistor Case Style:SC-70; No. of Pins:6; SVHC:No SVHC (19-Dec-2011); Current Id Max:1.2A; Package / Case:SC70; Power Dissipation Pd:750mW; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:-900mV; Voltage Vgs Rds on Measurement:8V

***rchild Semiconductor: This P-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for portable electronics applications.

***emi: P-Channel (-1.5V) Specified PowerTrench® MOSFET -20V, -0.83A, 0.5Ω

***nell: MOSFET, P CH, -20V, -0.83A, SC-89-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -830mA; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 625mW; Transistor Case Style: SC-89; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)

***rchild Semiconductor: This Single P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the r DS(on)@VGS = –1.5 V.

Market price

부분 #	제조	설명	재고	가격
2SJ243-T1-A	Renesas Electronics Corporation	Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET RoHS: Compliant	41333	1000:$0.1800 500:$0.1900 100:$0.2000 25:$0.2100 1:$0.2300

관련 상품

영상	부분 #	설명
	Mfr.#: 2SJ241 OMO.#: OMO-2SJ241-1190	POWER FIELD-EFFECT TRANSISTOR, 20A I(D), 60V, 0.09OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
	Mfr.#: 2SJ241 J241 OMO.#: OMO-2SJ241-J241-1190	신규 및 오리지널
	Mfr.#: 2SJ243-T1 , RLZ TE-11 24 OMO.#: OMO-2SJ243-T1-RLZ-TE-11-24-1190	신규 및 오리지널
	Mfr.#: 2SJ2434-000111F OMO.#: OMO-2SJ2434-000111F-1190	신규 및 오리지널
	Mfr.#: 2SJ244 OMO.#: OMO-2SJ244-1190	신규 및 오리지널
	Mfr.#: 2SJ244JY TR OMO.#: OMO-2SJ244JY-TR-1190	신규 및 오리지널
	Mfr.#: 2SJ245 OMO.#: OMO-2SJ245-1190	신규 및 오리지널
	Mfr.#: 2SJ245L-E OMO.#: OMO-2SJ245L-E-1190	신규 및 오리지널
	Mfr.#: 2SJ246S OMO.#: OMO-2SJ246S-1190	신규 및 오리지널
	Mfr.#: 2SJ246STL OMO.#: OMO-2SJ246STL-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 4500
수량 입력:

2SJ243-T1-A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$0.27~~; ~~US$0.27~~

10: ~~US$0.26~~; ~~US$2.56~~

100: ~~US$0.24~~; ~~US$24.30~~

500: ~~US$0.23~~; ~~US$114.75~~

1000: ~~US$0.22~~; ~~US$216.00~~

시작

2SJ243-T1 5
2SJ243-T 6
2SJ243 9
2SJ24 34
2SJ2 250
2SJ 1533

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2SJ243-T1-A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes