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SIR414DP-T1-GE3

SIR414DP-T1-GE3
Mfr. #:
SIR414DP-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIR414DP-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
SIR414DP-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
E
기술:
시
장착 스타일:
SMD/SMT
패키지/케이스:
PowerPAK-SO-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
40 V
Id - 연속 드레인 전류:
50 A
Rds On - 드레인 소스 저항:
2.3 mOhms
Vgs th - 게이트 소스 임계 전압:
1 V
Vgs - 게이트 소스 전압:
20 V
Qg - 게이트 차지:
117 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
83 W
구성:
하나의
채널 모드:
상승
상표명:
TrenchFET, PowerPAK
포장:
릴
시리즈:
선생님
트랜지스터 유형:
1 N-Channel
상표:
비쉐이 / 실리콘닉스
순방향 트랜스컨덕턴스 - 최소:
102 S
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
3000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
41 ns
일반적인 켜기 지연 시간:
14 ns
부품 번호 별칭:
SIR414DP-GE3
단위 무게:
0.017870 oz
Tags
SIR414, SIR41, SIR4, SIR
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ark
MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous D
***ure Electronics
Single N-Channel 40 V 0.0028 Ohm SMT TrenchFET Power Mosfet - PowerPak-SO-8
***nell
MOSFET, N CH, 40V, 50A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:40V; On Resistance Rds(on):0.0023ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:83W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
TrenchFET® Gen III Power MOSFET
The Vishay Siliconix TrenchFET® Gen III Power MOSFET family offers the industry's lowest on-resistance and on-resistance times gate charge for a device with this voltage rating in the PowerPAK® SO-8, PowerPAK 1212-8, and SO-8 package types. The Vishay Siliconix TrenchFET Gen III Power MOSFET improves greatly on the performance of the closest competing devices. The lower on-resistance and gate charge of the TrenchFET® Gen III Power MOSFET translate into lower conduction and switching losses. Several devices in the TrenchFET family are also equipped with TurboFET™ technology, which won the EN-Genius award for Best Improvement in Power Devices. Vishay Siliconix TrenchFET devices are used as the low-side MOSFET in synchronous buck converters and in secondary synchronous rectification and OR-ing applications.
Industrial Power Solution
Vishay offers one of the industry’s broadest selections of semiconductor and passive components for industrial power supply applications. The Vishay product portfolio for industrial power supplies includes power MOSFETs, power ICs, rectifiers, diodes, capacitors, resistors, and inductors. 
ThunderFET® Power MOSFETs
Vishay Siliconix ThunderFET® Power MOSFETs offer the lowest values of on-resistance in the industry for 100V MOSFETs with 4.5V ratings. In addition to the product of on-resistance and gate charge - a key figure-of-merit (FOM) for MOSFETs in DC-DC Converter applications is also best in class. For designers, the lower on-resistance translates into lower conduction losses and reduced power consumption for energy-saving green solutions. These devices are optimized for primary side switching and secondary side synchronous rectification in isolated DC/DC power supply designs for telecom brick and bus converter applications. The MOSFETs' 4.5 V rating for on-resistance allows a wide range of PWM and gate driver ICs to be considered.
부분 # 제조 설명 재고 가격
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3TR-ND		Vishay SiliconixMOSFET N-CH 40V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)		On Order
  • 3000:$0.7796
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3CT-ND		Vishay SiliconixMOSFET N-CH 40V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)		Temporarily Out of Stock
  • 1000:$0.8625
  • 500:$1.0409
  • 100:$1.3384
  • 10:$1.6660
  • 1:$1.8400
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3DKR-ND		Vishay SiliconixMOSFET N-CH 40V 50A PPAK SO-8
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®		Temporarily Out of Stock
  • 1000:$0.8625
  • 500:$1.0409
  • 100:$1.3384
  • 10:$1.6660
  • 1:$1.8400
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R - Tape and Reel (Alt: SIR414DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel		Americas - 0
  • 3000:$0.9389
  • 6000:$0.9119
  • 12000:$0.8749
  • 18000:$0.8499
  • 30000:$0.8269
SIR414DP-T1-GE3
DISTI # SIR414DP-T1-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R (Alt: SIR414DP-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Tape and Reel		Europe - 0
  • 3000:€1.5309
  • 6000:€1.0979
  • 12000:€0.8899
  • 18000:€0.7869
  • 30000:€0.7529
SIR414DP-T1-GE3
DISTI # 05W6928		Vishay IntertechnologiesTrans MOSFET N-CH 40V 33A 8-Pin PowerPAK SO T/R - Product that comes on tape, but is not reeled (Alt: 05W6928)
RoHS: Compliant
Min Qty: 1
Container: Ammo Pack		Americas - 0
  • 1:$1.6400
  • 25:$1.3600
  • 50:$1.2100
  • 100:$1.0500
  • 250:$0.9850
  • 500:$0.9190
  • 1000:$0.8750
SIR414DP-T1-GE3
DISTI # 781-SIR414DP-GE3		Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
RoHS: Compliant		0
  • 1:$1.6400
  • 10:$1.3600
  • 100:$1.0500
  • 500:$0.9190
  • 1000:$0.8750
SIR414DPT1GE3Vishay Intertechnologies 
RoHS: Compliant		Europe - 1400
    SIR414DP-T1-GE3
    DISTI # TMOSP10946    		Vishay IntertechnologiesN-CH 40V 50A 2,8mOhm PPSO-8
    RoHS: Compliant    		Stock DE - 0Stock US - 0
    • 3000:$0.8870
    SIR414DP-T1-GE3
    DISTI # 2335397    		Vishay IntertechnologiesMOSFET, N CH, 40V, 50A, POWERPAK SO
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.1600
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.3900
    • 3000:$1.3900
    SIR414DP-T1-GE3
    DISTI # 2458562    		Vishay IntertechnologiesMOSFET, N CHANNEL, 40V, 50A, POWERPAK SO
    RoHS: Compliant    		0
    • 1:$2.6000
    • 10:$2.1600
    • 100:$1.6600
    • 500:$1.4500
    • 1000:$1.3900
    • 3000:$1.3900
    SIR414DP-T1-GE3
    DISTI # 2335397    		Vishay IntertechnologiesMOSFET, N CH, 40V, 50A, POWERPAK SO
    RoHS: Compliant    		1
    • 5:£1.4300
    • 25:£1.3000
    • 100:£1.0000
    SIR414DP-T1-GE3Vishay IntertechnologiesMOSFET 40V Vds 20V Vgs PowerPAK SO-8
    RoHS: Compliant    		Americas -
      영상 부분 # 설명
      SIR414DP-T1-GE3

      Mfr.#: SIR414DP-T1-GE3

      OMO.#: OMO-SIR414DP-T1-GE3

      		 MOSFET 40V Vds 20V Vgs PowerPAK SO-8
      SIR414DP-T1-GE3

      Mfr.#: SIR414DP-T1-GE3

      OMO.#: OMO-SIR414DP-T1-GE3-VISHAY

      		 IGBT Transistors MOSFET 40V 50A 83W 2.8mohm @ 10V
      SIR414DP-T1-GE3-CUT TAPE

      Mfr.#: SIR414DP-T1-GE3-CUT TAPE

      OMO.#: OMO-SIR414DP-T1-GE3-CUT-TAPE-1190

      		 신규 및 오리지널
      SIR414DP

      Mfr.#: SIR414DP

      OMO.#: OMO-SIR414DP-1190

      		 신규 및 오리지널
      유효성
      재고:
      Available
      주문 시:
      1985
      수량 입력:
      SIR414DP-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$1.63
      US$1.63
      10
      US$1.35
      US$13.50
      100
      US$1.05
      US$105.00
      500
      US$0.92
      US$459.00
      1000
      US$0.76
      US$761.00
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