SIE882DF-T1-GE3

SIE882DF-T1-GE3
Mfr. #:
SIE882DF-T1-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 25V Vds 20V Vgs PolarPAK
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIE882DF-T1-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIE882DF-T1-GE3 DatasheetSIE882DF-T1-GE3 Datasheet (P4-P6)SIE882DF-T1-GE3 Datasheet (P7-P9)SIE882DF-T1-GE3 Datasheet (P10)
ECAD Model:
추가 정보:
SIE882DF-T1-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
상표명:
TrenchFET, PolarPAK
포장:
시리즈:
SIE
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
3000
하위 카테고리:
MOSFET
부품 번호 별칭:
SIE882DF-GE3
Tags
SIE8, SIE
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
Trans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R
***i-Key
MOSFET N-CH 25V 60A 10POLARPAK
***ark
Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:60A; Drain Source Voltage, Vds:25V; On Resistance, Rds(on):0.0014ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.7V ;RoHS Compliant: Yes
N-Channel PolarPAK® Power MOSFETs
Vishay Siliconix 20V to 75V PolarPAK® Power MOSFETs combine the thermal benefits of a double-sided cooling package with on-resistance down to as low as 1.4mΩ. The double-sided cooling provided by these Vishay Siliconix PolarPAK® Power MOSFETs gives designers a way to reduce system size and cost through better MOSFET thermal performance. These Vishay Siliconix PolarPAK® MOSFETs share the same footprint area as the standard SO-8 yet are twice as thin with a height profile of just 0.8 mm.
부분 # 제조 설명 재고 가격
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3-ND
Vishay SiliconixMOSFET N-CH 25V 60A POLARPAK
RoHS: Compliant
Min Qty: 3000
Container: Tape & Reel (TR)
Temporarily Out of Stock
  • 3000:$1.2028
SIE882DF-T1-GE3
DISTI # SIE882DF-T1-GE3
Vishay IntertechnologiesTrans MOSFET N-CH 25V 47A 10-Pin PolarPAK T/R - Tape and Reel (Alt: SIE882DF-T1-GE3)
RoHS: Compliant
Min Qty: 3000
Container: Reel
Americas - 0
  • 3000:$1.0900
  • 6000:$1.0900
  • 12000:$1.0900
  • 18000:$1.0900
  • 30000:$1.0900
SIE882DF-T1-GE3
DISTI # 781-SIE882DF-GE3
Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant
0
  • 1:$2.5200
  • 10:$2.1000
  • 100:$1.6200
  • 500:$1.4200
  • 1000:$1.3600
  • 3000:$1.3500
SIE882DF-T1-GE3Vishay IntertechnologiesMOSFET 25V Vds 20V Vgs PolarPAK
RoHS: Compliant
Americas - 3000
  • 3000:$1.1210
  • 6000:$1.0590
  • 12000:$1.0270
  • 24000:$1.0110
영상 부분 # 설명
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3

MOSFET 25V Vds 20V Vgs PolarPAK
SIE882DF-T1-GE3

Mfr.#: SIE882DF-T1-GE3

OMO.#: OMO-SIE882DF-T1-GE3-VISHAY

RF Bipolar Transistors MOSFET 25V 229A 125W 1.4mohm @ 10V
유효성
재고:
Available
주문 시:
5500
수량 입력:
SIE882DF-T1-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.51
US$2.51
10
US$2.09
US$20.90
100
US$1.62
US$162.00
500
US$1.41
US$705.00
1000
US$1.17
US$1 170.00
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