QPD0030

Mfr. #:: QPD0030
제조사:: Qorvo
설명:: RF JFET Transistors DC-4GHz 45W GaN 48V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: QPD0030 데이터 시트
배달:: DHL FedEx Ups TNT EMS
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ECAD Model:
추가 정보:: QPD0030 추가 정보

제품 속성
속성 값

제조사:: 코르보

제품 카테고리:: RF JFET 트랜지스터

RoHS:: Y

기술:: GaN

얻다:: 21.7 dB

Vds - 드레인 소스 항복 전압:: -

Vgs - 게이트 소스 항복 전압:: -

Id - 연속 드레인 전류:: -

출력 파워:: 45 W

최대 드레인 게이트 전압:: -

최소 작동 온도:: - 40 C

최대 작동 온도:: -

Pd - 전력 손실:: 45 W

장착 스타일:: SMD/SMT

패키지/케이스:: QFN-20

포장:: 릴

애플리케이션:: 마이크로셀 기지국, W-CDMA / LTE

구성:: 하나의

동작 주파수:: DC to 4 GHz

시리즈:: QPD

상표:: 코르보

순방향 트랜스컨덕턴스 - 최소:: -

상품 유형:: RF JFET 트랜지스터

공장 팩 수량:: 250

하위 카테고리:: 트랜지스터

부품 번호 별칭:: 1132528

Tags: QPD0, QPD

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

QPD0030 추가 정보

QPD GaN RF Transistors: Qorvo QPD GaN RF Transistors can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high-efficiency systems. These GaN transistors are discrete GaN on SiC HEMTs with a single-stage matched power amplifier transistor. Typical applications include W-CDMA/LTE, Macrocell base station, active antenna and general purpose applications.

GaN Transistor Solutions for Sub 6GHz 5G: Qorvo GaN Transistor Solutions for Sub 6GHz 5G are a broad portfolio of gallium nitride (GaN) discrete transistor products. The devices have varying levels of power, voltage, and frequency ratings in die-level and packaged solutions. These products provide high GaN performance plus the convenience of industry-standard packaging. This speeds design, manufacturing, and is backed by industry-leading reliability.

Market price

부분 #	제조	설명	재고	가격
QPD0030 DISTI # 772-QPD0030	Qorvo	RF JFET Transistors DC-4GHz 45W GaN 48V RoHS: Compliant	175	1:$33.7500 25:$30.3800 100:$27.3400 250:$25.1500

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