IS43R86400D-6BLI-TR

Mfr. #:: IS43R86400D-6BLI-TR
제조사:: ISSI
설명:: DRAM 512M (64Mx8) 166MHz DDR 2.5v
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IS43R86400D-6BLI-TR 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:: IS43R86400D-6BLI-TR 추가 정보

제품 속성
속성 값

제조사:: ISSI

제품 카테고리:: 적은 양

RoHS:: Y

유형:: SDRAM - DDR1

데이터 버스 폭:: 8 bit

조직:: 64 M x 8

패키지/케이스:: BGA-60

메모리 크기:: 512 Mbit

최대 클록 주파수:: 166 MHz

액세스 시간:: 6 ns

공급 전압 - 최대:: 2.7 V

공급 전압 - 최소:: 2.3 V

공급 전류 - 최대:: 370 mA

최소 작동 온도:: - 40 C

최대 작동 온도:: + 85 C

시리즈:: IS43R86400D

포장:: 릴

상표:: ISSI

장착 스타일:: SMD/SMT

습기에 민감한:: 네

작동 공급 전압:: 2.5 V

상품 유형:: 적은 양

공장 팩 수량:: 2500

하위 카테고리:: 메모리 및 데이터 저장

Tags: IS43R86400D-6BLI, IS43R86400D-6B, IS43R86400D-6, IS43R86400D, IS43R86400, IS43R86, IS43R8, IS43R, IS43, IS4

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IS43R86400D-6BLI-TR 평가 및 리뷰

S***v

THANKS!

2019-07-25

O***i

Everything went all right.

2019-04-08

G***s

Diode bridges work, voltage drop somewhere 3 volts. Packed badly i will not hide, just thrown into the package, i have a little bent contacts, but what you wanted for this money, at the time of purchase 86,86 rubles.

2019-05-07

IS43R86400D-6BLI-TR 설명

***et: DRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 60-Pin TFBGA T/R

***i-Key: IC DRAM 512MBIT PARALLEL 60TFBGA

IS43R86400D-6BLI-TR 추가 정보

IS43R32800D 8Mx32 256-Mbit DDR SDRAM: ISSI IS43R32800D 8Mx32 256-Mbit DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 268,435,456-bit memory array is internally organized as four banks of 64Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. The programmable features of burst length, burst sequence and CAS latency enable further advantages.

IS43R86400D 512Mb DDR SDRAM: ISSI IS43R86400D 512Mb DDR SDRAM achieves high speed data transfer using pipeline architecture and two data word accesses per clock cycle. The 536,870,912-bit memory array is internally organized as four banks of 128Mb to allow concurrent operations. The pipeline allows Read and Write burst accesses to be virtually continuous, with the option to concatenate or truncate the bursts. ISSI IS43R86400D 512Mb DDR SDRAM features programmable burst length, burst sequence, and CAS latency, enabling further advantages.

Market price

부분 #	제조	설명	재고	가격
IS43R86400D-6BLI-TR DISTI # IS43R86400D-6BLI-TR-ND	Integrated Silicon Solution Inc	IC DRAM 512M PARALLEL 60TFBGA RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	Temporarily Out of Stock	2500:$7.5792
IS43R86400D-6BLI-TR DISTI # IS43R86400D-6BLI-TR	Integrated Silicon Solution Inc	DRAM Chip DDR SDRAM 512M-Bit 64M x 8 2.5V 60-Pin TFBGA T/R - Tape and Reel (Alt: IS43R86400D-6BLI-TR) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$8.3900 5000:$8.0900 10000:$7.7900 15000:$7.4900 25000:$7.1900
IS43R86400D-6BLI DISTI # 870-IS43R86400D-6BLI	Integrated Silicon Solution Inc	DRAM 512M (64Mx8) 166MHz 2.5v DDR SDRAM RoHS: Compliant	180	1:$10.8200 10:$10.0100 25:$9.7900 50:$9.7300 100:$8.5700 250:$8.1500 500:$8.0600 1000:$7.7900
IS43R86400D-6BLI-TR DISTI # 870-43R86400D6BLITR	Integrated Silicon Solution Inc	DRAM 512M (64Mx8) 166MHz DDR 2.5v RoHS: Compliant	0	2500:$7.2700

관련 상품

영상	부분 #	설명
	Mfr.#: IS43R86400D-5TLI OMO.#: OMO-IS43R86400D-5TLI	DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
	Mfr.#: IS43R86400F-6TLI-TR OMO.#: OMO-IS43R86400F-6TLI-TR	DRAM 512M 64Mx8 166MHz DDR 2.5V
	Mfr.#: IS43R86400D-5TL OMO.#: OMO-IS43R86400D-5TL	DRAM 512M (64Mx8) 200MHz 2.5v DDR SDRAM
	Mfr.#: IS43R86400E-5TL OMO.#: OMO-IS43R86400E-5TL	DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8
	Mfr.#: IS43R86400F-6TLI OMO.#: OMO-IS43R86400F-6TLI	DRAM 512M 64Mx8 166MHz DDR 2.5V
	Mfr.#: IS43R86400E-5TLI OMO.#: OMO-IS43R86400E-5TLI	DRAM DDR,512M,2.5V,RoHs 200MHz,64Mx8, IT
	Mfr.#: IS43R86400E-6TLI-TR OMO.#: OMO-IS43R86400E-6TLI-TR-INTEGRATED-SILICON-SOLUTION	DRAM DDR,512M,2.5V,RoHs 166MHz,64Mx8, IT
	Mfr.#: IS43R86400F-6BLI-TR OMO.#: OMO-IS43R86400F-6BLI-TR-INTEGRATED-SILICON-SOLUTION	DRAM 512M 64Mx8 166MHz DDR 2.5V
	Mfr.#: IS43R86400F-5TL OMO.#: OMO-IS43R86400F-5TL-INTEGRATED-SILICON-SOLUTION	DRAM 512M 64Mx8 200MHz DDR 2.5V
	Mfr.#: IS43R86400F-5BL-TR OMO.#: OMO-IS43R86400F-5BL-TR-INTEGRATED-SILICON-SOLUTION	DRAM 512M 64Mx8 200MHz DDR 2.5V

유효성

재고:: Available
주문 시:: 1500
수량 입력:

IS43R86400D-6BLI-TR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

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