FCP11N60N

Mfr. #:: FCP11N60N
제조사:: ON Semiconductor
설명:: MOSFET N-CH 600V 10.8A TO220
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: FCP11N60N 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사: FSC

제품 카테고리: FET - 단일

포장: 튜브

단위 무게: 0.063493 oz

패키지 케이스: TO-220-3

기술: 시

채널 수: 1 Channel

구성: 하나의

트랜지스터형: 1 N-Channel

Pd 전력 손실: 94 W

최대 작동 온도: + 150 C

최소 작동 온도: - 55 C

가을철: 10 ns

상승 시간: 9.1 ns

Id-연속-드레인-전류: 10.8 A

Vds-드레인-소스-고장-전압: 600 V

Rds-On-Drain-Source-Resistance: 255 mOhms

트랜지스터 극성: N-채널

일반 꺼짐 지연 시간: 42 ns

일반 켜기 지연 시간: 13.6 ns

순방향 트랜스컨덕턴스-최소: 13.5 S

Tags: FCP11N60N, FCP11N60, FCP11N, FCP11, FCP1, FCP

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Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

FCP11N60N 설명

***Semiconductor: N-Channel Power MOSFET, SUPREMOS®, FAST, 600 V, 10.8 A, 299 mΩ, TO-220

***Components: FCP11N60N N-Channel MOSFET, 10.8 A, 600 V SupreMOS, 3-Pin TO-220 ON Semiconductor

***p One Stop Global: Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220AB Tube

***ure Electronics: FCH47N60 Series 600 V 0.38 Ohms Flange Mount N-Channel MOSFET - TO-220

***i-Key: MOSFET N-CH 600V 10.8A TO220

***ter Electronics: 600V N-CHANNEL MOSFET SUPREMOS

***ark: Sm 600V 299Mohm F To220 Rohs Compliant: Yes

***inecomponents.com: SupreMOS 11A in TO220

***ment14 APAC: MOSFET,N CH,600V,10.8A,TO220; Transistor Polarity:N Channel; Continuous Drain Current Id:10.8A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.255ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (18-Jun-2012)

***rchild Semiconductor: The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

Market price

부분 #	제조	설명	재고	가격
FCP11N60N DISTI # FCP11N60N-ND	ON Semiconductor	MOSFET N-CH 600V 10.8A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	744In Stock	1600:$1.5152 800:$1.6511 100:$2.3513 10:$2.9260 1:$3.2400
FCP11N60N-F102 DISTI # FCP11N60N-F102-ND	ON Semiconductor	MOSFET N-CH 600V 10.8A TO220F RoHS: Compliant Min Qty: 800 Container: Tube	Temporarily Out of Stock	800:$1.7034
FCP11N60N DISTI # FCP11N60N	ON Semiconductor	Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220AB Rail - Rail/Tube (Alt: FCP11N60N) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 23	800:$2.3900 1600:$2.3900 3200:$2.3900 4800:$2.3900 8000:$2.3900
FCP11N60N DISTI # FCP11N60N	ON Semiconductor	Trans MOSFET N-CH 600V 10.8A 3-Pin(3+Tab) TO-220AB Rail (Alt: FCP11N60N) RoHS: Compliant Min Qty: 1	Europe - 0	1:€1.5900 10:€1.4900 25:€1.2900 50:€1.2900 100:€1.1900 500:€1.1900 1000:€1.0900
FCP11N60N-F102 DISTI # FCP11N60N-F102	ON Semiconductor	N-Channel SupreMOS MOSFET 600V 10.8A 299mOhm 3-Pin TO-220 Tube - Rail/Tube (Alt: FCP11N60N-F102) RoHS: Compliant Min Qty: 800 Container: Tube	Americas - 0	800:$1.1139 1600:$1.1059 3200:$1.0919 4800:$1.0779 8000:$1.0519
FCP11N60N-F102 DISTI # FCP11N60N-F102	ON Semiconductor	N-Channel SupreMOS MOSFET 600V 10.8A 299mOhm 3-Pin TO-220 Tube (Alt: FCP11N60N-F102) RoHS: Compliant Min Qty: 1 Container: Tube	Europe - 0	1:€1.7900 10:€1.4900 25:€1.1900 50:€1.0900 100:€1.0900 500:€1.0900 1000:€1.0900
FCP11N60N-F102 DISTI # 48AC0856	ON Semiconductor	SM 600V 299MOHM F TO220 / TUBE	0	1:$2.5800 100:$2.1100 250:$1.9300 500:$1.8000 1000:$1.6900
FCP11N60N. DISTI # 27AC5649	Fairchild Semiconductor Corporation	SM 600V 299MOHM F TO220 ROHS COMPLIANT: YES	23	1:$2.9000 10:$2.4800 100:$2.0000 500:$1.7700 1000:$1.4800 5000:$1.3400 10000:$1.2900
FCP11N60N	Fairchild Semiconductor Corporation	Power Field-Effect Transistor, 10.8A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB RoHS: Compliant	17552	1000:$1.4000 500:$1.4700 100:$1.5300 25:$1.5900 1:$1.7200
FCP11N60N DISTI # 512-FCP11N60N	ON Semiconductor	MOSFET SupreMOS 11A RoHS: Compliant	724	1:$2.8000 10:$2.3800 100:$1.9000 500:$1.6700 1000:$1.3800 2500:$1.2900 5000:$1.2400
FCP11N60N-F102 DISTI # 512-FCP11N60N_F102	ON Semiconductor	MOSFET FCP11N60N, in TO220 F102 T/F option	0	800:$1.7200
FCP11N60N DISTI # 7396140P	ON Semiconductor	MOSFET N CHANNEL 600V 10.8A TO220AB, TU	28	10:£1.2900 20:£1.2400 50:£1.2000 250:£1.0200
FCP11N60N DISTI # 1885769	ON Semiconductor	MOSFET,N CH,600V,10.8A,TO220 RoHS: Compliant	0	1:$4.4400 10:$3.7700 100:$3.0100 500:$2.6500 1000:$2.1900 2500:$2.0400 5000:$1.9700 10000:$1.8800

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