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AS4C32M16D1-5BCNTR

AS4C32M16D1-5BCNTR
Mfr. #:
AS4C32M16D1-5BCNTR
제조사:
Alliance Memory
설명:
DRAM 512M 2.5V 200Mhz 32M x 16 DDR1
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
AS4C32M16D1-5BCNTR 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
AS4C32M16D1-5BCNTR 추가 정보
제품 속성
속성 값
제조사:
얼라이언스 메모리
제품 카테고리:
적은 양
RoHS:
Y
유형:
SDRAM - DDR1
데이터 버스 폭:
16 bit
조직:
32 M x 16
패키지/케이스:
TFBGA-60
메모리 크기:
512 Mbit
최대 클록 주파수:
200 MHz
액세스 시간:
0.7 ns
공급 전압 - 최대:
2.7 V
공급 전압 - 최소:
2.3 V
공급 전류 - 최대:
250 mA
최소 작동 온도:
0 C
최대 작동 온도:
+ 70 C
시리즈:
AS4C32M16D1
포장:
릴
상표:
얼라이언스 메모리
장착 스타일:
SMD/SMT
습기에 민감한:
네
상품 유형:
적은 양
공장 팩 수량:
2500
하위 카테고리:
메모리 및 데이터 저장
Tags
AS4C32M16D1-5B, AS4C32M16D1-5, AS4C32M16D1, AS4C32M16D, AS4C32M1, AS4C3, AS4C, AS4
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
    C***l
    C***l
    CY

    As described, arrived quickly, works just fine! Recommend the seller.

    2019-04-12
    M***o
    M***o
    RU

    The product corresponds to the description

    2019-05-15
    N***a
    N***a
    RU

    Long walking!

    2019-05-28
***metry Electronics
DDR1 512MB 200Mhz 400Mbps/pin 2.5V 32M x 16 60ball TFBGA
***et
DRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA T/R
***i-Key
IC DRAM 512MBIT PARALLEL 60BGA
DDR1 Synchronous DRAM
Alliance Memory DDR1 Synchronous DRAM is a high-speed CMOS double data rate synchronous DRAM. It is internally configured with a synchronous interface (all signals are registered on the positive edge of the clock signal, CK). Data outputs occur at both rising edges of CK and CK. Read and write accesses to the SDRAM are burst oriented. The Accesses start at a selected location and continue for a programmed number of locations in a programmed sequence. Accesses begin with the registration of a BankActivate command which is then followed by a Read or Write command.
부분 # 제조 설명 재고 가격
AS4C32M16D1-5BCNTR
DISTI # AS4C32M16D1-5BCNTR		Alliance Memory IncDRAM Chip DDR SDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA T/R - Tape and Reel (Alt: AS4C32M16D1-5BCNTR)
RoHS: Compliant
Min Qty: 2500
Container: Reel		Americas - 0
  • 2500:$2.5900
  • 5000:$2.5900
  • 10000:$2.4900
  • 15000:$2.4900
  • 25000:$2.3900
AS4C32M16D1-5BCN
DISTI # 913-AS4C32M16D1-5BCN		Alliance Memory IncDRAM 512M 2.5V 200Mhz 32M x 16 DDR1
RoHS: Compliant		134
  • 1:$4.4800
  • 10:$4.0600
  • 25:$3.9700
  • 50:$3.9500
  • 100:$3.5400
  • 250:$3.5300
  • 500:$3.4000
  • 1000:$3.0900
  • 2000:$2.9400
AS4C32M16D1-5BCNTR
DISTI # 913-AS4C32M16D15BCNT		Alliance Memory IncDRAM 512M 2.5V 200Mhz 32M x 16 DDR1
RoHS: Compliant		0
  • 2500:$3.0100
AS4C32M16D1-5BCNTRAlliance Memory IncSDRAM 512M-Bit 32M x 16 2.5V 60-Pin TFBGA2500
    영상 부분 # 설명
    AS4C32M16SA-7TINTR

    Mfr.#: AS4C32M16SA-7TINTR

    OMO.#: OMO-AS4C32M16SA-7TINTR

    		 DRAM 512M, 3.3V, 32M x 16 SDRAM
    AS4C32M16D1-5BANTR

    Mfr.#: AS4C32M16D1-5BANTR

    OMO.#: OMO-AS4C32M16D1-5BANTR

    		 DRAM 512M 2.5V 200MHz 32Mx16 DDR1 A-Temp
    AS4C32M16D3L-12BCN

    Mfr.#: AS4C32M16D3L-12BCN

    OMO.#: OMO-AS4C32M16D3L-12BCN

    		 DRAM 512M 1.35V 800Mhz 32M x 16 DDR3
    AS4C32M16D3-12BCN

    Mfr.#: AS4C32M16D3-12BCN

    OMO.#: OMO-AS4C32M16D3-12BCN

    		 DRAM 512M 1.5V 800Mhz 32M x 16 DDR3
    AS4C32M16MD1-5BCN

    Mfr.#: AS4C32M16MD1-5BCN

    OMO.#: OMO-AS4C32M16MD1-5BCN

    		 DRAM 512M, 1.8V, 200Mhz 32M x 16 Mobile DDR
    AS4C32M16SB-7TIN

    Mfr.#: AS4C32M16SB-7TIN

    OMO.#: OMO-AS4C32M16SB-7TIN-ALLIANCE-MEMORY

    		 512Mb SDRAM is a high-speed CMOS synchronous DRAM containing 512 Mbits (Alt: AS4C32M16SB-7TIN)
    AS4C32M16MS-6BIN

    Mfr.#: AS4C32M16MS-6BIN

    OMO.#: OMO-AS4C32M16MS-6BIN-230

    		 DRAM 512M 1.8V 166MHz 32Mx16 LP MSDR
    AS4C32M16D1A-5TANTR

    Mfr.#: AS4C32M16D1A-5TANTR

    OMO.#: OMO-AS4C32M16D1A-5TANTR-ALLIANCE-MEMORY

    		 DRAM 512m 2.5V 200Mhz 32M x 16 DDR1
    AS4C32M16D2A-25BAN

    Mfr.#: AS4C32M16D2A-25BAN

    OMO.#: OMO-AS4C32M16D2A-25BAN-ALLIANCE-MEMORY

    		 IC DRAM 512M PARALLEL 84FBGA
    AS4C32M16D1A-5TCNTR

    Mfr.#: AS4C32M16D1A-5TCNTR

    OMO.#: OMO-AS4C32M16D1A-5TCNTR-ALLIANCE-MEMORY

    		 IC DRAM 512M PARALLEL 66TSOP II
    유효성
    재고:
    Available
    주문 시:
    4500
    수량 입력:
    AS4C32M16D1-5BCNTR의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$4.59
    US$4.59
    10
    US$4.16
    US$41.60
    25
    US$4.07
    US$101.75
    50
    US$4.05
    US$202.50
    100
    US$3.63
    US$363.00
    250
    US$3.62
    US$905.00
    500
    US$3.48
    US$1 740.00
    1000
    US$3.16
    US$3 160.00
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