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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPS12CN10LGBKMA1 DISTI # IPS12CN10LGBKMA1-ND | Infineon Technologies AG | MOSFET N-CH 100V 69A TO251-3-11 RoHS: Compliant Min Qty: 1500 Container: Tube | Limited Supply - Call | |
| IPS12CN10L G DISTI # 726-IPS12CN10LG | Infineon Technologies AG | MOSFET N-Ch 100V 69A IPAK-3 RoHS: Compliant | 0 | |
| IPS12CN10LG | Infineon Technologies AG | Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA RoHS: Compliant | 230 |
|
| 영상 | 부분 # | 설명 |
|---|---|---|
|
Mfr.#: IPS12CN10 OMO.#: OMO-IPS12CN10-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPS12CN10L OMO.#: OMO-IPS12CN10L-1190 |
신규 및 오리지널 |
|
|
Mfr.#: IPS12CN10LG OMO.#: OMO-IPS12CN10LG-1190 |
Power Field-Effect Transistor, 69A I(D), 100V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
|
Mfr.#: IPS12CN10LGBKMA1 |
MOSFET N-CH 100V 69A TO251-3-11 |
|
|
Mfr.#: IPS12CN10L G OMO.#: OMO-IPS12CN10L-G-126 |
IGBT Transistors MOSFET N-Ch 100V 69A IPAK-3 |