S25FL128SAGBHM200

Mfr. #:: S25FL128SAGBHM200
제조사:: Cypress Semiconductor
설명:: IC 128 MB FLASH MEMORY Automotive, AEC-Q100, FL-S
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: S25FL128SAGBHM200 데이터 시트
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추가 정보:: S25FL128SAGBHM200 추가 정보 S25FL128SAGBHM200 Product Details

제품 속성
속성 값

Tags: S25FL128SAGB, S25FL128SAG, S25FL128SA, S25FL128S, S25FL128, S25FL12, S25FL1, S25FL, S25F, S25

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S25FL128SAGBHM200 설명

***ical: 128 Mbit 3.0V SPI Flash Memory

***i-Key: IC 128 MB FLASH MEMORY

S25FL128SAGBHM200 추가 정보

S25FL128S NOR Flash Memory Devices: Cypress S25FL128S FL-S NOR is a 2.7V - 3.6V / 1.65V - 3.6V VIO Volt Flash Non-volatile Memory Device using 65nm MirrorBit technology. Designed using the Eclipse architecture with a Page Programming Buffer, the 128-Mb S25FL128S FL-S NOR allows users to program up to 128 words (256 bytes) in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. The device connects to a host system via a Serial Peripheral Interface (SPI) and supports traditional SPI single bit serial input and output (Single I/O or SIO), optional two bit (Dual I/O or DIO), and four bit (Quad I/O or QIO) serial commands. As part of the FL-S family, S25FL128S FL-S NOR provides support for Double Data Rate (DDR) read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FL128S FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. Cypress S25FL128S FL-S NOR is ideal for code shadowing, XIP, and data storage.

S25FL MirroBit Flash Non-Volatile Memory: Cypress S25FL128S / S25FL256S MirroBit® Flash Non-Volatile Memory devices employ MirrorBit technology that stores two data bits in each memory array transistor. These Cypress devices feature 65nm process lithography as well as Eclipse architecture that dramatically improves program and erase performance. S25FL128S and S25FL256S Flash Non-Volatile Memory devices offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.

S25FLxS FL-S NOR Flash Memory Devices: Cypress S25FLxS FL-S NOR Flash Memory Devices are 2.7V-3.6V or 1.65V-3.6V VIO Volt Flash Non-volatile Memory Devices. The S25FLxS FL-S NOR Flash Memory Devices use 65nm MirrorBit® technology. Featuring the Eclipse™ architecture with a Page Programming Buffer, 256-Mb S25FLxS FL-S NOR allows users to program up to 256-words. This results in faster effective programming and erase than prior generation SPI program or erase algorithms. The devices connect to a host system via an SPI and support traditional SPI single bit serial input and output.The S25FLxS FL-S NOR provides support for Double Data Rate read commands for SIO, DIO, and QIO. The S25FLxS FL-S NOR transfer address and read data on both edges of the clock. Using FL-S devices at the supported higher clock rates with QIO or DDR-QIO commands. The S25FLxS NOR instruction read transfer rate can match a traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. S25FLxS FL-S NOR offers high-density performance capabilities coupled with the flexibility and speed required by a variety of embedded applications. S25FLxS FL-S NOR memory devices are ideal for code shadowing, XIP, and data storage.

Market price

부분 #	제조	설명	재고	가격
S25FL128SAGBHM200 DISTI # V99:2348_19096604	Cypress Semiconductor	IC 128 Mb FLASH MEMORY	338	250:$4.6550 100:$5.0839 50:$5.4340 25:$5.7610 10:$6.3949 1:$7.7440
S25FL128SAGBHM200 DISTI # V36:1790_19096604	Cypress Semiconductor	IC 128 Mb FLASH MEMORY	0	338000:$3.5750 169000:$3.5790 33800:$3.9630 3380:$4.6890 338:$4.8140
S25FL128SAGBHM200 DISTI # S25FL128SAGBHM200-ND	Cypress Semiconductor	IC 128 MB FLASH MEMORY RoHS: Compliant Min Qty: 338 Container: Tray	Temporarily Out of Stock	338:$4.8135
S25FL128SAGBHM200 DISTI # 30279384	Cypress Semiconductor	IC 128 Mb FLASH MEMORY	338	250:$4.6550 100:$5.0839 50:$5.4340 25:$5.7610 10:$6.3949 2:$7.7440
S25FL128SAGBHM200 DISTI # 47AC6065	Cypress Semiconductor	S25FL128SAGBHM200	0	500:$3.8400 250:$3.9600 100:$4.7200 50:$5.0800 25:$5.4300 10:$5.9600 1:$6.6400
S25FL128SAGBHM200 DISTI # 727-S25FL128SAGBM200	Cypress Semiconductor	NOR Flash IC 128 Mb FLASHMEM RoHS: Compliant	304	1:$7.0800 10:$6.4900 25:$5.9000 50:$5.6200 100:$5.3100 250:$4.9100

관련 상품

영상	부분 #	설명
	Mfr.#: S25FL128LAGMFI000 OMO.#: OMO-S25FL128LAGMFI000	NOR Flash IC 128 Mb FLASHMEM
	Mfr.#: S25FL128SAGMFV003 OMO.#: OMO-S25FL128SAGMFV003	NOR Flash Nor
	Mfr.#: S25FL128SAGMFIR10 OMO.#: OMO-S25FL128SAGMFIR10	NOR Flash Nor
	Mfr.#: S25FL128SDSMFN003 OMO.#: OMO-S25FL128SDSMFN003	NOR Flash Nor
	Mfr.#: S25FL128SAGMFVR03 OMO.#: OMO-S25FL128SAGMFVR03-CYPRESS-SEMICONDUCTOR	IC FLASH 128M SPI 133MHZ
	Mfr.#: S25FL128LAGMFA010 OMO.#: OMO-S25FL128LAGMFA010-CYPRESS-SEMICONDUCTOR	IC 128 MB FLASH MEMORY
	Mfr.#: S25FL128LDPBHV033 OMO.#: OMO-S25FL128LDPBHV033-CYPRESS-SEMICONDUCTOR	IC NOR FL-L
	Mfr.#: S25FL128SAGBHI310 OMO.#: OMO-S25FL128SAGBHI310-CYPRESS-SEMICONDUCTOR	IC FLASH 128M SPI 133MHZ 24BGA FL-S
	Mfr.#: S25FL128P0XMFI011-SP OMO.#: OMO-S25FL128P0XMFI011-SP-1190	신규 및 오리지널
	Mfr.#: S25FL128PIF OMO.#: OMO-S25FL128PIF-1190	신규 및 오리지널

유효성

재고:: Available
주문 시:: 1500
수량 입력:

S25FL128SAGBHM200의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$7.36~~; ~~US$7.36~~

10: ~~US$7.00~~; ~~US$69.97~~

100: ~~US$6.63~~; ~~US$662.85~~

500: ~~US$6.26~~; ~~US$3 130.15~~

1000: ~~US$5.89~~; ~~US$5 892.00~~

2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.

시작

S25FL128SAGB 38
S25FL128SAG 125
S25FL128SA 132
S25FL128S 189
S25FL128 309
S25FL12 434
S25FL1 647
S25FL 1464
S25F 1653
S25 1993

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S25FL128SAGBHM200

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Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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