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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IRFZ34VSPBF DISTI # 70018392 | Infineon Technologies AG | MOSFET,60V,30A,28 MOHM,32.7 NC QG,D2-PAK RoHS: Compliant | 0 |
|
| IRFZ34VSPBF | International Rectifier | RoHS: Compliant | 37 | |
| IRFZ34VSPBF DISTI # 8659265 | Infineon Technologies AG | RoHS: Compliant | 0 |
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| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: FZ3600R17HP4 OMO.#: OMO-FZ3600R17HP4 |
IGBT Modules IGBT 1700V 3600A |
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Mfr.#: FZ3600R17HE4 OMO.#: OMO-FZ3600R17HE4 |
IGBT Modules IGBT 1700V 3600A |
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Mfr.#: FZ3600R12HP4HOSA2 |
MODULE IGBT IHMB190-2 |
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Mfr.#: FZ3600R12KE3 OMO.#: OMO-FZ3600R12KE3-125 |
IGBT Modules 1200V 3600A SINGLE |
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Mfr.#: FZ300R12KF1 OMO.#: OMO-FZ300R12KF1-1190 |
신규 및 오리지널 |
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Mfr.#: FZ300R17KE3G OMO.#: OMO-FZ300R17KE3G-1190 |
신규 및 오리지널 |
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Mfr.#: FZ34E OMO.#: OMO-FZ34E-1190 |
신규 및 오리지널 |
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Mfr.#: FZ35-30WK-04-H OMO.#: OMO-FZ35-30WK-04-H-1190 |
신규 및 오리지널 |
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Mfr.#: FZ3600R17HE4NPSA1 OMO.#: OMO-FZ3600R17HE4NPSA1-1190 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel |
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Mfr.#: FZ3600R12KE3NOSA1 OMO.#: OMO-FZ3600R12KE3NOSA1-1190 |
Insulated Gate Bipolar Transistor, 4700A I(C), 1200V V(BR)CES, N-Channel |