BSC016N06NSTATMA1

BSC016N06NSTATMA1
Mfr. #:
BSC016N06NSTATMA1
제조사:
Infineon Technologies
설명:
MOSFET DIFFERENTIATED MOSFETS
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
BSC016N06NSTATMA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
BSC016N06NSTATMA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
SMD/SMT
패키지/케이스:
PG-TDSON-8
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
60 V
Id - 연속 드레인 전류:
100 A
Rds On - 드레인 소스 저항:
1.6 mOhms
Vgs th - 게이트 소스 임계 전압:
2.1 V
Vgs - 게이트 소스 전압:
10 V
Qg - 게이트 차지:
71 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
139 W
구성:
하나의
채널 모드:
상승
포장:
트랜지스터 유형:
1 N-Channel
상표:
인피니언 테크놀로지스
순방향 트랜스컨덕턴스 - 최소:
70 S
가을 시간:
9 ns
상품 유형:
MOSFET
상승 시간:
9 ns
공장 팩 수량:
5000
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
35 ns
일반적인 켜기 지연 시간:
19 ns
부품 번호 별칭:
BSC016N06NST SP001657074
Tags
BSC016N06, BSC016, BSC01, BSC0, BSC
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et Europe
OptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R
***ical
Trans MOSFET N-CH 60V 31A Tape
***i-Key
DIFFERENTIATED MOSFETS
***ark
Mosfet, N-Ch, 60V, 100A, 167W, Tdson; Transistor Polarity:n Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(On):0.0014Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Rohs Compliant: Yes
***ment14 APAC
Prices include import duty and tax. MOSFET, N-CH, 60V, 100A, 167W, TDSON; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:60V; On Resistance Rds(on):0.0014ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.8V; Power Dissipation Pd:167W; Transistor Case Style:TDSON; No. of Pins:8Pins; Operating Temperature Max:175°C; Product Range:OptiMOS Series; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (27-Jun-2018)
***nell
MOSFET, CAN N, 60V, 100A, 167W, TDSON; Polarità Transistor:Canale N; Corrente Continua di Drain Id:100A; Tensione Drain Source Vds:60V; Resistenza di Attivazione Rds(on):0.0014ohm; Tensione Vgs di Misura Rds(on):10V; Tensione di Soglia Vgs:2.8V; Dissipazione di Potenza Pd:167W; Modello Case Transistor:TDSON; No. di Pin:8Pin; Temperatura di Esercizio Max:175°C; Gamma Prodotti:OptiMOS Series; Standard di Qualifica Automotive:-; Livello di Sensibilità all'Umidità (MSL):MSL 1 - Non Limitata; Sostanze Estremamente Preoccupanti (SVHC):No SVHC (27-Jun-2018)
OptiMOS™ 5 Power MOSFETs
Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower RDS(on) and Figure of Merit (RDS(on) x Qg) compared to alternative devices. They are designed using a new silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom and client applications in the computing industry. They can also be used in synchronous rectification in switched mode power supplies (SMPS) and motor control, solar micro inverters and fast switching DC/DC converter applications.
부분 # 제조 설명 재고 가격
BSC016N06NSTATMA1
DISTI # V72:2272_19084605
Infineon Technologies AGBSC016N06NST4314
  • 3000:$1.2320
  • 1000:$1.3770
  • 500:$1.5209
  • 250:$1.5930
  • 100:$1.7700
  • 25:$2.0660
  • 10:$2.2950
  • 1:$2.8853
BSC016N06NSTATMA1
DISTI # V36:1790_19084605
Infineon Technologies AGBSC016N06NST0
  • 5000000:$1.0790
  • 2500000:$1.0800
  • 500000:$1.1490
  • 50000:$1.2490
  • 5000:$1.2640
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1CT-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Cut Tape (CT)
14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1DKR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 1
Container: Digi-Reel®
14918In Stock
  • 1000:$1.4525
  • 500:$1.7530
  • 100:$2.1336
  • 10:$2.6540
  • 1:$2.9500
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1TR-ND
Infineon Technologies AGDIFFERENTIATED MOSFETS
RoHS: Compliant
Min Qty: 5000
Container: Tape & Reel (TR)
5000In Stock
  • 5000:$1.2643
BSC016N06NSTATMA1
DISTI # 32689028
Infineon Technologies AGBSC016N06NST5000
  • 5000:$1.1842
BSC016N06NSTATMA1
DISTI # 32445508
Infineon Technologies AGBSC016N06NST4314
  • 6:$2.8853
BSC016N06NSTATMA1
DISTI # BSC016N06NSTATMA1
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R - Tape and Reel (Alt: BSC016N06NSTATMA1)
RoHS: Compliant
Min Qty: 5000
Container: Reel
Americas - 0
  • 30000:$1.0900
  • 50000:$1.0900
  • 10000:$1.1900
  • 20000:$1.1900
  • 5000:$1.2900
BSC016N06NSTATMA1
DISTI # SP001657074
Infineon Technologies AGOptiMOS Power Transistor MOSFET N-Channel 60V 100A 8-Pin TDSON-FL T/R (Alt: SP001657074)
RoHS: Compliant
Min Qty: 5000
Container: Tape and Reel
Europe - 0
  • 50000:€1.0489
  • 30000:€1.1239
  • 20000:€1.2108
  • 10000:€1.3119
  • 5000:€1.5739
BSC016N06NSTATMA1
DISTI # 93AC6983
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON,Transistor Polarity:N Channel,Continuous Drain Current Id:100A,Drain Source Voltage Vds:60V,On Resistance Rds(on):0.0014ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:2.8V,Power RoHS Compliant: Yes2429
  • 1000:$1.3500
  • 500:$1.6400
  • 250:$1.7500
  • 100:$1.8700
  • 50:$2.0200
  • 25:$2.1800
  • 10:$2.3300
  • 1:$2.7500
BSC016N06NSTATMA1
DISTI # 726-BSC016N06NSTATM1
Infineon Technologies AGMOSFET DIFFERENTIATED MOSFETS
RoHS: Compliant
27859
  • 1:$2.7200
  • 10:$2.3100
  • 100:$1.8500
  • 500:$1.6200
  • 1000:$1.3400
BSC016N06NSTATMA1
DISTI # 2986440
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON
RoHS: Compliant
2429
  • 1000:$1.9000
  • 500:$1.9700
  • 250:$2.2100
  • 100:$2.3600
  • 10:$2.8600
  • 1:$3.7300
BSC016N06NSTATMA1
DISTI # 2986440
Infineon Technologies AGMOSFET, N-CH, 60V, 100A, 167W, TDSON5454
  • 500:£1.2400
  • 250:£1.3900
  • 100:£1.4900
  • 10:£1.8100
  • 1:£2.3700
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STM32F405RGT6

Mfr.#: STM32F405RGT6

OMO.#: OMO-STM32F405RGT6

ARM Microcontrollers - MCU ARM M4 1024 FLASH 168 Mhz 192kB SRAM
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Mfr.#: LPC1517JBD48E

OMO.#: OMO-LPC1517JBD48E

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CRE2512-FZ-R005E-2

Mfr.#: CRE2512-FZ-R005E-2

OMO.#: OMO-CRE2512-FZ-R005E-2

Current Sense Resistors - SMD .005 Ohms 2W 1% AEC-Q200 2512
ATP302-TL-H

Mfr.#: ATP302-TL-H

OMO.#: OMO-ATP302-TL-H-ON-SEMICONDUCTOR

RF Bipolar Transistors MOSFET POWER MOSFET
유효성
재고:
27
주문 시:
2010
수량 입력:
BSC016N06NSTATMA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$2.72
US$2.72
10
US$2.31
US$23.10
100
US$1.85
US$185.00
500
US$1.62
US$810.00
1000
US$1.34
US$1 340.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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