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SIHG17N60D-GE3

SIHG17N60D-GE3
Mfr. #:
SIHG17N60D-GE3
제조사:
Vishay / Siliconix
설명:
MOSFET 600V Vds 30V Vgs TO-247AC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
SIHG17N60D-GE3 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
SIHG17N60D-GE3 DatasheetSIHG17N60D-GE3 Datasheet (P4-P6)SIHG17N60D-GE3 Datasheet (P7-P8)
ECAD Model:
추가 정보:
SIHG17N60D-GE3 추가 정보
제품 속성
속성 값
제조사:
비쉐이
제품 카테고리:
MOSFET
RoHS:
Y
기술:
시
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247AC-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
600 V
Id - 연속 드레인 전류:
17 A
Rds On - 드레인 소스 저항:
340 mOhms
Vgs th - 게이트 소스 임계 전압:
5 V
Vgs - 게이트 소스 전압:
30 V
Qg - 게이트 차지:
45 nC
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
277.8 W
구성:
하나의
포장:
대부분
시리즈:
D
상표:
비쉐이 / 실리콘닉스
상품 유형:
MOSFET
공장 팩 수량:
500
하위 카테고리:
MOSFET
부품 번호 별칭:
SIHG17N60D-E3
단위 무게:
1.340411 oz
Tags
SIHG17, SIHG1, SIHG, SIH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
***S.I.T. Europe - USA - Asia
Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
***nell
MOSFET, N-CH, 600V, 17A, TO-247AC; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.275ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:277.8W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-247AC; No. of Pins:3; MSL:MSL 1 - Unlimited; Operating Temperature Range:-55°C to +150°C
D-Series High Voltage Power MOSFETs
Vishay Siliconix's D-Series High Voltage Power MOSFETs are Vishay's next-generation high voltage N-Channel MOSFETs available in 400V, 500V and 600V ratings. These new devices combines low specific on-resistance with ultra-low gate charge, currents from 3.0A to 36A and are available in a wide range of packages. Features include Vishay's new high-voltage stripe technology, on-resistance down to 0.13Ω, gate charge down to 6nC, best-in-class gate charge times on-resistant figures of merit (FOM) down to 7.65 Ω-nC, and avalanche rated for reliable operation. Typical applications include high-power, high-performance switch mode applications, including server and telecom power systems, welding, plasma cutting, battery chargers, ballast light, high-intensity discharge (HID) lighting, semiconductor capital equipment, and induction heating.
부분 # 제조 설명 재고 가격
SIHG17N60D-GE3
DISTI # 27549478		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin(3+Tab) TO-247AC
RoHS: Compliant		85
  • 31:$2.5385
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3-ND		Vishay SiliconixMOSFET N-CH 600V 17A TO247AC
RoHS: Compliant
Min Qty: 500
Container: Tube		Temporarily Out of Stock
  • 500:$2.4665
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC (Alt: SIHG17N60D-GE3)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€1.3900
  • 50:€1.4900
  • 100:€1.4900
  • 500:€1.4900
  • 25:€1.6900
  • 10:€2.0900
  • 1:€2.5900
SIHG17N60D-GE3
DISTI # SIHG17N60D-GE3		Vishay IntertechnologiesTrans MOSFET N-CH 600V 17A 3-Pin TO-247AC - Tape and Reel (Alt: SIHG17N60D-GE3)
RoHS: Not Compliant
Min Qty: 500
Container: Reel		Americas - 0
  • 3000:$1.7900
  • 5000:$1.7900
  • 1000:$1.8900
  • 2000:$1.8900
  • 500:$1.9900
SIHG17N60D-GE3
DISTI # 62W0514		Vishay IntertechnologiesPower MOSFET, N Channel, 17 A, 600 V, 0.275 ohm, 10 V, 3 V RoHS Compliant: Yes85
  • 1:$1.6500
  • 10:$1.6500
  • 25:$1.6500
  • 50:$1.6500
  • 100:$1.6500
  • 500:$1.6500
  • 1000:$1.6500
  • 2500:$1.6500
SIHG17N60D-GE3
DISTI # 78-SIHG17N60D-GE3		Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
RoHS: Compliant		277
  • 1:$3.9700
  • 10:$3.2900
  • 100:$2.7100
  • 250:$2.6200
  • 500:$2.3500
  • 1000:$1.9900
  • 2500:$1.8900
SIHG17N60DGE3Vishay IntertechnologiesPower Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
RoHS: Compliant		500
    SIHG17N60D-GE3Vishay IntertechnologiesMOSFET 600V Vds 30V Vgs TO-247AC
    RoHS: Compliant    		Americas -
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      유효성
      재고:
      277
      주문 시:
      2260
      수량 입력:
      SIHG17N60D-GE3의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
      참고 가격(USD)
      수량
      단가
      내선 가격
      1
      US$3.97
      US$3.97
      10
      US$3.29
      US$32.90
      100
      US$2.71
      US$271.00
      250
      US$2.62
      US$655.00
      500
      US$2.35
      US$1 175.00
      1000
      US$1.99
      US$1 990.00
      2500
      US$1.89
      US$4 725.00
      5000
      US$1.82
      US$9 100.00
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