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FFSH20120ADN-F155

FFSH20120ADN-F155
Mfr. #:
FFSH20120ADN-F155
제조사:
ON Semiconductor / Fairchild
설명:
Schottky Diodes & Rectifiers 1200V SiC SBD 20A
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FFSH20120ADN-F155 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FFSH20120ADN-F155 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
쇼트키 다이오드 및 정류기
RoHS:
Y
제품:
쇼트키 탄화규소 다이오드
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
If - 순방향 전류:
20 A
Vrrm - 반복적인 역전압:
1.2 kV
Vf - 순방향 전압:
1.45 V
Ifsm - 순방향 서지 전류:
96 A
구성:
공통 음극
기술:
SiC
Ir - 역전류:
200 uA
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
FFSH20120A
포장:
튜브
작동 온도 범위:
- 55 C to + 175 C
종료 스타일:
구멍을 통해
유형:
탄화규소 쇼트키 다이오드
상표:
온세미컨덕터 / 페어차일드
Pd - 전력 손실:
150 W
상품 유형:
쇼트키 다이오드 및 정류기
공장 팩 수량:
450
하위 카테고리:
다이오드 및 정류기
Vr - 역 전압:
1.2 kV
부품 번호 별칭:
FFSH20120ADN_F155
단위 무게:
0.225401 oz
Tags
FFSH20120ADN-F, FFSH20120AD, FFSH201, FFSH2, FFSH, FFS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***emi
SiC Diode - 1200V, 20A, TO-247-3, Common Cathode
***ure Electronics
Schottky Diodes Rectifiers 1200V
***i-Key Marketplace
RECTIFIER DIODE, SCHOTTKY, 1 PHA
***rchild Semiconductor
SiC Schottky Diode has no switching loss, provides improved system efficiency against Si diodes by utilizing new semiconductor material - Silicon Carbide, enables higher operating frequency, and helps increasing power density and reduction of system size/cost. Its high reliability ensures robust operation during surge or over-voltage conditions
FFSH SiC Schottky Diodes
ON Semiconductor FFSH Silicon Carbide (SiC) Schottky Diodes provide improved system efficiency and have a max junction temperature of 175ºC. These Schottky Diodes have no switching loss and a high surge current capacity. The diodes use Silicon Carbide semiconductor material for higher operating frequency, increasing power density and reduction of system size/cost. This ensures high reliability and robust operation during surge or over-voltage conditions.
1200V SiC Schottky Diodes
ON Semiconductor 1200V Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. These SiC Schottky diodes feature no reverse recovery current, temperature-independent switching, and excellent thermal performance. The system benefits include high-efficiency, fast operating frequency, high-power density, low EMI, and reduced system size and cost.
Wide Bandgap SiC Devices
ON Semiconductor Wide Bandgap Silicon Carbide (SiC) Devices incorporate a completely new technology that provides superior switching performance and higher reliability compared to silicon. The system benefits include the highest efficiency, faster-operating frequency, increased power density, reduced EMI, and reduced system size and cost. ON Semiconductor’s SiC portfolio includes 650V and 1200V diodes, 650V and 1200V IGBT and SiC diode Power Integrated Modules (PIMs), 1200V MOSFETs and SiC MOSFET drivers, and AEC-Q100 qualified devices.
Silicon Carbide Schottky Diodes
ON Semiconductor Silicon Carbide (SiC) Schottky Diodes provide superior switching performance and higher reliability to silicon-based devices. SiC Schottky Diodes feature no reverse recovery current, temperature independent switching, and excellent thermal performance. System benefits include high efficiency, fast operating frequency, high power density, low EMI, and reduced system size and cost.  ON Semiconductor offers 650V and 1200V devices in a range of current and package options, ideal for next-generation power system designs.
부분 # 제조 설명 재고 가격
FFSH20120ADN-F155
DISTI # V99:2348_16116317		ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 25:$9.5750
  • 10:$10.4610
  • 1:$10.6510
FFSH20120ADN-F155
DISTI # FFSH20120ADN-F155-ND		ON SemiconductorDIODE SIC 1200V 10A TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$8.1014
FFSH20120ADN-F155
DISTI # 29495569		ON SemiconductorSIC TO247 SBD 20A 1200V11250
  • 450:$9.2217
FFSH20120ADN-F155
DISTI # 25944270		ON SemiconductorSIC TO247 SBD 20A 1200V314
  • 1:$10.6510
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155		ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$6.3900
  • 2700:$6.5900
  • 900:$6.6900
  • 1800:$6.6900
  • 450:$6.7900
FFSH20120ADN_F155
DISTI # FFSH20120ADN-F155		ON Semiconductor1200V SiC SBD 20A (Alt: FFSH20120ADN-F155)
RoHS: Compliant
Min Qty: 1		Europe - 0
  • 1000:€6.0900
  • 500:€6.5900
  • 100:€6.7900
  • 50:€7.0900
  • 25:€7.3900
  • 10:€7.6900
  • 1:€8.3900
FFSH20120ADN_F155
DISTI # FFSH20120ADN_F155		ON Semiconductor1200V SiC SBD 20A - Rail/Tube (Alt: FFSH20120ADN_F155)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
    FFSH20120ADN_F155
    DISTI # FFSH20120ADN-F155    		ON Semiconductor1200V SiC SBD 20A - Bulk (Alt: FFSH20120ADN-F155)
    Min Qty: 44
    Container: Bulk    		Americas - 0
    • 440:$7.0900
    • 220:$7.2900
    • 132:$7.3900
    • 44:$7.4900
    • 88:$7.4900
    FFSH20120ADN-F155
    DISTI # 48AC1062    		ON SemiconductorSIC TO247 SBD 20A 1200V / TUBE0
    • 500:$9.4600
    • 250:$10.0900
    • 100:$10.8200
    • 50:$11.7700
    • 1:$12.9200
    FFSH20120ADN-F155
    DISTI # 512-FFSH20120ADNF155    		ON SemiconductorSchottky Diodes & Rectifiers 1200V SiC SBD 20A
    RoHS: Compliant    		194
    • 1:$10.6700
    • 10:$9.8100
    • 25:$9.4100
    • 100:$8.2900
    • 250:$7.8800
    • 500:$7.3700
    FFSH20120ADN-F155Fairchild Semiconductor Corporation 
    RoHS: Not Compliant    		421
    • 1000:$7.6500
    • 500:$8.0500
    • 100:$8.3800
    • 25:$8.7400
    • 1:$9.4100
    영상 부분 # 설명
    UCC5390SCDR

    Mfr.#: UCC5390SCDR

    OMO.#: OMO-UCC5390SCDR

    		 Gate Drivers 10A/10A 3-kVRMS Sing ChanelIsolGateDriver
    UCC5350SBDR

    Mfr.#: UCC5350SBDR

    OMO.#: OMO-UCC5350SBDR

    		 Gate Drivers 5A/5A, 3-kVRMS Single-Channel
    IXFT170N25X3HV

    Mfr.#: IXFT170N25X3HV

    OMO.#: OMO-IXFT170N25X3HV

    		 MOSFET 250V/170A Ultra Junc tion X3-Class MOSFET
    DA-T268-401E-TR

    Mfr.#: DA-T268-401E-TR

    OMO.#: OMO-DA-T268-401E-TR

    		 Heat Sinks TO-268 SMD HEAT SINK ANODZD
    L1F3-U400200012000

    Mfr.#: L1F3-U400200012000

    OMO.#: OMO-L1F3-U400200012000

    		 High Power LEDs - Single Color UV/NUV
    DA-T268-401E-TR

    Mfr.#: DA-T268-401E-TR

    OMO.#: OMO-DA-T268-401E-TR-OHMITE

    		 TO-268 SMD HEAT SINK ANODZD
    WSHP2818R0100FEA

    Mfr.#: WSHP2818R0100FEA

    OMO.#: OMO-WSHP2818R0100FEA-VISHAY-DALE

    		 RES 0.01 OHM 1% 10W 2818
    MCKK2012TR47M

    Mfr.#: MCKK2012TR47M

    OMO.#: OMO-MCKK2012TR47M-TAIYO-YUDEN

    		 FIXED IND 470NH 4.5A 39 MOHM SMD
    IXFT170N25X3HV

    Mfr.#: IXFT170N25X3HV

    OMO.#: OMO-IXFT170N25X3HV-IXYS-CORPORATION

    		 MOSFET N-CH 250V 170A TO268HV
    SGNMNC3706EK

    Mfr.#: SGNMNC3706EK

    OMO.#: OMO-SGNMNC3706EK-SPRAGUE-GOODMAN

    		 Trimmer / Variable Capacitors Trimmer / Variable Capacitors 2-70pF 6000 Volts Hgh Vlt Non-Magnetic
    유효성
    재고:
    194
    주문 시:
    2177
    수량 입력:
    FFSH20120ADN-F155의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
    참고 가격(USD)
    수량
    단가
    내선 가격
    1
    US$10.67
    US$10.67
    10
    US$9.81
    US$98.10
    25
    US$9.41
    US$235.25
    100
    US$8.29
    US$829.00
    250
    US$7.88
    US$1 970.00
    500
    US$7.37
    US$3 685.00
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