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FGH40N60SMDF-F085

FGH40N60SMDF-F085
Mfr. #:
FGH40N60SMDF-F085
제조사:
ON Semiconductor / Fairchild
설명:
IGBT Transistors 600V, 40A FIELD STOP IGBT
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
FGH40N60SMDF-F085 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
FGH40N60SMDF-F085 추가 정보
제품 속성
속성 값
제조사:
온세미컨덕터
제품 카테고리:
IGBT 트랜지스터
RoHS:
Y
기술:
시
시리즈:
FGH40N60DF_F085
자격:
AEC-Q101
포장:
튜브
상표:
온세미컨덕터 / 페어차일드
상품 유형:
IGBT 트랜지스터
공장 팩 수량:
450
하위 카테고리:
IGBT
부품 번호 별칭:
FGH40N60SMDF_F085
단위 무게:
0.225401 oz
Tags
FGH40N60SMDF-F, FGH40N60SMDF, FGH40N60SM, FGH40N60S, FGH40N60, FGH40N6, FGH40N, FGH40, FGH4, FGH
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ical
Trans IGBT Chip N-CH 600V 80A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 600V V(BR)CES, N-Channel, TO-247AB
*** Electronic Components
IGBT Transistors 600V, 40A FIELD STOP IGBT
***rchild Semiconductor
Using Novel Field Stop IGBT Technology, Fairchild’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential.
***p One Stop
Trans IGBT Chip N-CH 600V 80A 260400mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 80A 260.4W TO247A
***nell
IGBT, HIGH SPEED, 600V, 80A, TO-247A; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 260.4W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ical
Trans IGBT Chip N-CH 600V 60A 235800mW 3-Pin(3+Tab) TO-247A Tube
***SIT Distribution GmbH
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
***ark
Igbt, High Speed, 600V, 60A, To-247A
***nell
IGBT, HIGH SPEED, 600V, 60A, TO-247A; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 1.7V; Power Dissipation Pd: 235.8W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. o
***ical
Trans IGBT Chip N-CH 600V 90A 328900mW 3-Pin(3+Tab) TO-247A
***i-Key
IGBT 600V 90A 328.9W TO247A
*** Electronic Components
IGBT Transistors IGBT
***S
new, original packaged
***ment14 APAC
IGBT, HIGH SPEED, 600V, 90A, TO-247A; Transistor Type:IGBT; DC Collector Current:90A; Collector Emitter Voltage Vces:1.6V; Power Dissipation Pd:328.9W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No. of Pins:3; MSL:MSL 2A - 4 weeks; SVHC:No SVHC (19-Dec-2012); Operating Temperature Range:-
***ure Electronics
Very Fast 600 V 80 A 250 W Flange Mount PowerMESH IGBT - TO-247LL
***ical
Trans IGBT Chip N-CH 600V 80A 250000mW 3-Pin(3+Tab) TO-247 Tube
***el Electronic
PMIC Solutions Power Management IC, i.MX6, no-prog ,4/6 buck, 6 LDO, 1 boost, QFN 56, Reel
***icroelectronics
40 A, 600 V, very fast IGBT with Ultrafast diode
***nell
IGBT, N 600V 40A TO-247; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 250W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
***emi
IGBT, N-Channel with Low VF Switching Diode, 600V, 30A, VCE(sat)=1.4V
***et
Trans IGBT Chip N-CH 600V 100A 3-Pin TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel
***ark
Transistor, Igbt, N-Ch, 600V, 30A, To247
***el Electronic
RES SMD 1.96M OHM 1% 1/8W 0805
***nell
TRANSISTOR, IGBT, N-CH, 600V, 30A, TO247; DC Collector Current: 30A; Collector Emitter Saturation Voltage Vce(on): 1.4V; Power Dissipation Pd: 225mW; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
***ical
Trans IGBT Chip N-CH 650V 80A 290000mW Automotive 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Insulated Gate Bipolar Transistor, 80A I(C), 650V V(BR)CES, N-Channel, TO-247AB
*** Electronic Components
IGBT Transistors N-ch / 40A 650V IGBT
***nell
IGBT, 650V, 40A, 1.8V, TO-247 FIELD STOP;
***i-Key
IGBT FIELD STOP 650V 80A TO247-3
***rchild Semiconductor
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other applications where low conduction and switching losses are essential
Field Stop IGBTs
ON Semiconductor Field Stop (FS) IGBTs offer optimum performance with low conduction and switching losses. These IGBTs feature high current handling capability, positive temperature coefficient, tight parameter distribution, and a wide safe operating area. The FS IGBTs come with increased breakdown voltage that improves reliability where negative ambient temperatures are present. As the temperature decreases the IGBT and FRD blocking voltage also decreases that makes the devices particularly beneficial for PV solar inverters used in colder climates. These IGBTs provide fast and soft recovery that reduces power dissipation and achieves low turn-on and turn-off losses.
부분 # 제조 설명 재고 가격
FGH40N60SMDF-F085
DISTI # V99:2348_14141775		ON Semiconductor600V, 40A FIELD STOP IGBT270
  • 1000:$2.8730
  • 500:$3.3150
  • 250:$3.7330
  • 100:$3.9650
  • 10:$4.6210
  • 1:$6.0313
FGH40N60SMDF-F085
DISTI # V36:1790_14141775		ON Semiconductor600V, 40A FIELD STOP IGBT0
  • 450000:$2.5280
  • 225000:$2.5320
  • 45000:$2.9950
  • 4500:$3.8960
  • 450:$4.0520
FGH40N60SMDF-F085
DISTI # FGH40N60SMDF-F085-ND		ON SemiconductorIGBT 600V 80A 349W TO247
RoHS: Compliant
Min Qty: 450
Container: Tube		Temporarily Out of Stock
  • 450:$4.0517
FGH40N60SMDF-F085
DISTI # 25943386		ON Semiconductor600V, 40A FIELD STOP IGBT270
  • 3:$6.0313
FGH40N60SMDF_F085
DISTI # FGH40N60SMDF-F085		ON Semiconductor600V, 40A FIELD STOP IGBT - Rail/Tube (Alt: FGH40N60SMDF-F085)
RoHS: Compliant
Min Qty: 450
Container: Tube		Americas - 0
  • 4500:$2.4900
  • 1800:$2.5900
  • 2700:$2.5900
  • 450:$2.6900
  • 900:$2.6900
FGH40N60SMDF_F085
DISTI # FGH40N60SMDF-F085		ON Semiconductor600V, 40A FIELD STOP IGBT - Bulk (Alt: FGH40N60SMDF-F085)
Min Qty: 108
Container: Bulk		Americas - 0
  • 1080:$2.7900
  • 324:$2.8900
  • 540:$2.8900
  • 108:$2.9900
  • 216:$2.9900
FGH40N60SMDF-F085
DISTI # 48AC1098		ON SemiconductorFS P TO247 40A 600V AUTO / TUBE0
  • 500:$2.7200
  • 250:$2.8000
  • 100:$3.3400
  • 50:$3.8600
  • 25:$4.1100
  • 10:$4.7000
  • 1:$5.4300
FGH40N60SMDF-F085
DISTI # 512-FGH40N60SMDFF085		ON SemiconductorIGBT Transistors 600V, 40A FIELD STOP IGBT
RoHS: Compliant		418
  • 1:$5.5200
  • 10:$4.6900
  • 100:$4.0600
  • 250:$3.8600
  • 500:$3.4600
  • 1000:$2.9200
  • 2500:$2.7700
FGH40N60SMDF-F085Fairchild Semiconductor Corporation 
RoHS: Not Compliant		528
  • 1000:$3.0500
  • 500:$3.2100
  • 100:$3.3500
  • 25:$3.4900
  • 1:$3.7600
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유효성
재고:
418
주문 시:
2401
수량 입력:
FGH40N60SMDF-F085의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$5.52
US$5.52
10
US$4.69
US$46.90
100
US$4.06
US$406.00
250
US$3.86
US$965.00
500
US$3.46
US$1 730.00
1000
US$2.92
US$2 920.00
2500
US$2.77
US$6 925.00
2021년부터 반도체 공급 부족으로 인해 아래 가격은 2021년 이전 정상 가격입니다. 확인을 위해 문의를 보내주세요.
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