55GN01CA-TB-E

Mfr. #:: 55GN01CA-TB-E
제조사:: ON Semiconductor
설명:: RF Bipolar Transistors SWITCHING DEVICE
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 55GN01CA-TB-E 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: RF 양극성 트랜지스터

RoHS:: Y

시리즈:: 55GN01CA

트랜지스터 유형:: 양극성 전원

기술:: 시

트랜지스터 극성:: NPN

DC 수집기/기본 이득 hfe 최소:: 100

컬렉터-이미터 전압 VCEO 최대:: 10 V

이미터-베이스 전압 VEBO:: 3 V

지속적인 수집가 전류:: 5 mA

최소 작동 온도:: + 25 C

최대 작동 온도:: + 150 C

구성:: 하나의

장착 스타일:: SMD/SMT

패키지/케이스:: CP-3

포장:: 릴

컬렉터-베이스 전압 VCBO:: 20 V

DC 전류 이득 hFE 최대:: 180

키:: 1.1 mm

길이:: 2.9 mm

동작 주파수:: 5.5 GHz

작동 온도 범위:: + 25 C to + 150 C

유형:: RF 바이폴라 전원

너비:: 1.5 mm

상표:: 온세미컨덕터

이득 대역폭 곱 fT:: 4.5 GHz

최대 DC 수집기 전류:: 70 mA

Pd - 전력 손실:: 200 mW

상품 유형:: RF 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

Tags: 55GN01C, 55GN0, 55GN, 55G

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We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

55GN01CA-TB-E 설명

***r Electronics: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, C Band, Silicon, NPN, TO-236AB

***emi: RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz

***ure Electronics: 55GN01CA Series NPN 10 V 200 mW 70 mA UHF Wide-Band Low Noise Amplifier - CP-3

***(Formerly Allied Electronics): ON Semi 55GN01CA-TB-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin CP | ON Semiconductor 55GN01CA-TB-E

***ark: RF Transistor, 10V, 70mA, fT=5.5GHz, NPN Single CP / REEL

***emi: RF Transistor, NPN Single CP, 10 V, 70 mA, fT = 1.5 GHz

***ark: RF Transistor, 10V, 70mA, fT=1.5GHz, NPN Single CP / REEL

***ical: Trans RF BJT NPN 10V 0.07A 200mW 3-Pin SC-59 T/R

***r Electronics: RF Small Signal Bipolar Transistor

***el Electronic: Current & Power Monitors & Regulators High-Side Power and Current Monitor

***ure Electronics: PBR941 Series 8 GHz 10 V 360 mW UHF Wideband NPN Transistor - SOT23-3

***ical: Trans RF BJT NPN 10V 0.05A 360mW 3-Pin TO-236AB T/R

***ark: RF WIDEBAND TRANSISTOR, NPN, 10V, 8GHZ, 3-SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage Max:10V; Transition Frequency:8GHz; Power Dissipation:360mW; Continuous Collector Current:50mA; No. of Pins:3Pins; Product Range:- RoHS Compliant: Yes

***emi: RF Transistor, NPN Single CP, 8 V, 50 mA, fT=1.5 GHz

***et: Trans GP BJT NPN 8V 0.05A 3-Pin CP T/R

***S: NPN SMALL SGNL TRANSISTOR 600mA 40V hFE=20~300 SOT-23 Leaded

***eco: MMBT4401-7,BIPOLAR TRANSISTOR NPN SOT-23 3K

***Yang: Trans GP BJT NPN 40V 0.6A Automotive 3-Pin SOT-23 T/R

***essParts.Net: DIODES INC MMBT4401-7 / TRANS NPN 40V 350MW SMD SOT-23 DIODE INC

***ure Electronics: BFU550A Series 12V 50mA 450mW NPN Wideband Silicon RF Transistor - 236AB (SOT23)

***icontronic: RF Small Signal Bipolar Transistor, 0.08A I(C), 1-Element, L Band, Silicon, NPN, TO-236AB

***ical: Trans RF BJT NPN 16V 0.08A 450mW Automotive 3-Pin TO-236AB T/R

***ukat: NPN-HF 12V 50mA 450mW 11GHz SOT23

***W: RF Transistor, 2 GHz, 18 dB, 0.6 dB NF, 3 Pin SOT23, Silicon

***et: Trans GP NPN 12V 0.05A 3-Pin SOT-23 T/R

***nell: RF TRANSISTOR, AEC-Q101, NPN, 12V, SOT23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 12V; Transition Frequency ft: 11GHz; Power Dissipation Pd: 450mW; DC Collector Current: 50mA; DC Current Gain hFE: 60hFE; RF Transistor Case: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ure Electronics: FMMT Series NPN 500 mW 30 V 1 A Surface Mount Small Signal Transistor - SOT-23

***r Electronics: Small Signal Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

***Yang: Trans GP BJT NPN 30V 1A 3-Pin SuperSOT T/R - Tape and Reel

***rchild Semiconductor: These devices are designed with high current gain and low saturation voltage with collector currents up to 2 A continuous. Sourced from Process NB.

Market price

부분 #	제조	설명	재고	가격
55GN01CA-TB-E DISTI # V72:2272_07322767	ON Semiconductor	Trans RF BJT NPN 10V 0.07A 3-Pin CP T/R RoHS: Compliant	5985	3000:$0.0404 1000:$0.0895 500:$0.0937 250:$0.1041 100:$0.1156 25:$0.2488 10:$0.2764 1:$0.4275
55GN01CA-TB-E DISTI # 55GN01CA-TB-EOSCT-ND	ON Semiconductor	RF TRANS NPN 10V 4.5GHZ 3CP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5980In Stock	1000:$0.1003 500:$0.1308 100:$0.1974 10:$0.3490 1:$0.4700
55GN01CA-TB-E DISTI # 55GN01CA-TB-EOSDKR-ND	ON Semiconductor	RF TRANS NPN 10V 4.5GHZ 3CP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5980In Stock	1000:$0.1003 500:$0.1308 100:$0.1974 10:$0.3490 1:$0.4700
55GN01CA-TB-E DISTI # 55GN01CA-TB-EOSTR-ND	ON Semiconductor	RF TRANS NPN 10V 4.5GHZ 3CP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	75000:$0.0564 30000:$0.0635 15000:$0.0677 6000:$0.0762 3000:$0.0846
55GN01CA-TB-E DISTI # 25775832	ON Semiconductor	Trans RF BJT NPN 10V 0.07A 3-Pin CP T/R RoHS: Compliant	5985	3000:$0.0404 1000:$0.0895 500:$0.0937 250:$0.1041 143:$0.1156
55GN01CA-TB-E DISTI # 55GN01CA-TB-E	ON Semiconductor	Trans GP BJT NPN 10V 0.07A 3-Pin CP T/R (Alt: 55GN01CA-TB-E) RoHS: Compliant Min Qty: 3000 Container: Tape and Reel	Europe - 0	3000:€0.0861 6000:€0.0650 12000:€0.0592 18000:€0.0530 30000:€0.0500
55GN01CA-TB-E DISTI # 55GN01CA-TB-E	ON Semiconductor	Trans GP BJT NPN 10V 0.07A 3-Pin CP T/R - Tape and Reel (Alt: 55GN01CA-TB-E) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0480 15000:$0.0477 24000:$0.0471 45000:$0.0465 90000:$0.0454
55GN01CA-TB-E DISTI # 55GN01CA-TB-E	ON Semiconductor	Trans GP BJT NPN 10V 0.07A 3-Pin CP T/R (Alt: 55GN01CA-TB-E) RoHS: Compliant Min Qty: 9000 Container: Tape and Reel	Asia - 0	9000:$0.0700 18000:$0.0673 27000:$0.0648 45000:$0.0625 90000:$0.0603 225000:$0.0583 450000:$0.0574
55GN01CA-TB-E DISTI # 70341726	ON Semiconductor	ON Semi 55GN01CA-TB-E NPN RF Bipolar Transistor,0.07 A,10 V,3-Pin CP RoHS: Compliant	0	100:$0.0840 250:$0.0800 500:$0.0760 1000:$0.0720
55GN01CA-TB-E DISTI # 863-55GN01CA-TB-E	ON Semiconductor	RF Bipolar Transistors SWITCHING DEVICE RoHS: Compliant	8884	1:$0.4500 10:$0.2910 100:$0.1250 1000:$0.0960 3000:$0.0730 9000:$0.0650 24000:$0.0610 45000:$0.0540 99000:$0.0520
55GN01CA-TB-E	ON Semiconductor	RoHS: Not Compliant	68926	500:$0.0900 1000:$0.0900 25:$0.1000 100:$0.1000 1:$0.1100
55GN01CA-TB-E DISTI # 7925212P	ON Semiconductor	TRANSISTOR NPN 10V 70MA UHF LOWNOISE CP3, RL	5550	100:£0.0930
55GN01CA-TB-E DISTI # C1S541900658033	ON Semiconductor	Trans GP BJT NPN 10V 0.07A 3-Pin CP T/R RoHS: Compliant	5985	250:$0.1041 100:$0.1156 25:$0.2488

영상	부분 #	설명
	Mfr.#: 24LC32AT-I/OT OMO.#: OMO-24LC32AT-I-OT	EEPROM 32K 4K X 8 2.5V SER EE IND
	Mfr.#: CMDSH-3 TR OMO.#: OMO-CMDSH-3-TR	Schottky Diodes & Rectifiers 30V Schottky
	Mfr.#: MCH3484-TL-W OMO.#: OMO-MCH3484-TL-W	MOSFET NCH 0.9V DRIVE SERIE
	Mfr.#: 2SC5086-O,LF OMO.#: OMO-2SC5086-O-LF	RF Bipolar Transistors Radio-Frequency Bipolar Transistor
	Mfr.#: MCH3484-TL-W OMO.#: OMO-MCH3484-TL-W-ON-SEMICONDUCTOR	MOSFET N-CH 20V 4.5A MCPH3
	Mfr.#: 24LC32AT-I/OT OMO.#: OMO-24LC32AT-I-OT-MICROCHIP-TECHNOLOGY	IC EEPROM 32K I2C SOT23-5
	Mfr.#: CMDSH-3 TR OMO.#: OMO-CMDSH-3-TR-CENTRAL-SEMICONDUCTOR	Schottky Diodes & Rectifiers 30V Schottky
	Mfr.#: 2SC5086-O,LF OMO.#: OMO-2SC5086-O-LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	RF Bipolar Transistors Radio-Frequency Bipolar Transisto

55GN01CA-TB-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes