RN1971TE85LF

Mfr. #:: RN1971TE85LF
제조사:: Toshiba
설명:: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: RN1971TE85LF 데이터 시트
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HTML Datasheet:: RN1971TE85LF Datasheet RN1971TE85LF Datasheet (P4-P6)
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - 사전 바이어스

RoHS:: Y

구성:: 듀얼

트랜지스터 극성:: NPN

일반적인 입력 저항:: 10 kOhms

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-363-6

DC 수집기/기본 이득 hfe 최소:: 120

컬렉터-이미터 전압 VCEO 최대:: 50 V

지속적인 수집가 전류:: 100 mA

Pd - 전력 손실:: 200 mW

시리즈:: RN1971

포장:: 릴

이미터-베이스 전압 VEBO:: 5 V

상표:: 도시바

최대 DC 수집기 전류:: 100 mA

상품 유형:: BJT - 양극성 트랜지스터 - 사전 바이어스

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000212 oz

Tags: RN1971T, RN1971, RN197, RN19, RN1

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

RN1971TE85LF 설명

***et: Trans Digital BJT NPN 50V 100mA 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***ure Electronics: DDC114YU Series NPN/PNP 50 V 100 mA Dual Transistor Surface Mount - SOT-363-6

***(Formerly Allied Electronics): NPN Biased Signal Dual Transistor SOT363 | Diodes Inc DDC114YU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***nell: TRANS, RF, 50V, SOT-363; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: -; Base Input Resistor R1: 10kohm; Base-Emitter Resistor R2: 47kohm; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)

***ca Corp: Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 2-Element, NPN, Silicon

***ure Electronics: DDC144EU Series 50 V 100 mA NPN Surface Mount Dual Transistor - SOT-363-6

***ow.cn: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin SOT-363 T/R

***ark: Transistor Polarity:Single NPN; Collector Emitter Voltage Max NPN:50V; Collector Emitter Voltage Max PNP:-; Continuous Collector Current:100mA; Base Input Resistor R1:10kohm; Base Emitter Resistor R2:10kohm; No. of Pins:6 Pin; MSL:- RoHS Compliant: Yes

***p One Stop Global: Trans Digital BJT NPN/PNP 50V 100mA 6-Pin SOT-363 T/R

***ure Electronics: DCX143TU Series 50V 100 mA Small Signal Complementary Pre-Biased Dual Transistor

***ark: Rf Transistor, 50V, 0.1A, Sot-363 Rohs Compliant: Yes |Diodes Inc. DCX143TU-7-F

***ical: Trans Digital BJT NPN 50V 100mA 150mW 6-Pin UMT T/R

***ure Electronics: UMH3N Series 50 V 100 mA Surface Mount Dual NPN Digital Transistor - SC-88

***ark: Transistor Dual, Npn/npn, Um6; Transistor Polarity:dual Npn; Collector Emitter Voltage Max Npn:50V; Collector Emitter Voltage Max Pnp:-; Continuous Collector Current:100Ma; Base Input Resistor R1:4.7Kohm; Base Emitter Resistor R2:- Rohs Compliant: Yes

***nell: TRANSISTOR DUAL UM6 NPN/NPN; Digital Transistor Polarity: Dual NPN; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMH3N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Transistor Case Style: SOT-363; Transistor Polarity: NPN; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ure Electronics: UMD2N Series 50 V 100 mA Surface Mount Dual NPN/PNP Digital Transistor - SOT-363

***ical: Trans Digital BJT NPN/PNP 50V 100mA 150mW 6-Pin UMT T/R

***ment14 APAC: Transistor DUAL UM6 PNP/NPN; Digital Polarity:NPN and PNP Complement; Collector Emitter Voltage V(br)ceo:50V; Continuous Current

***ark: TRANSISTOR DUAL UM6 PNP/NPN; Transistor Type:General Purpose; Transistor Polarity:NPN / PNP; Collector-to-Emitter Breakdown Voltage:50V; Current Ic Continuous a Max:5mA; Voltage, Vce Sat Max:300mV; Power Dissipation:150mW; Min ;RoHS Compliant: Yes

***nell: TRANSISTOR DUAL UM6 PNP/NPN; Digital Transistor Polarity: NPN and PNP Complement; Collector Emitter Voltage V(br)ceo: 50V; Continuous Collector Current Ic: 100mA; Base Input Resistor R1: 4.7kohm; Base-Emitter Resistor R2: -; Resistor Ratio, R1 / R2: -; RF Transistor Case: SOT-363; No. of Pins: 6 Pin; Product Range: UMD6N Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Collector Emitter Saturation Voltage Vce(on): 300mV; Current Ic Continuous a Max: 5mA; DC Collector Current: 100mA; DC Current Gain hFE: 250hFE; Gain Bandwidth ft Typ: 250MHz; Hfe Min: 100; Module Configuration: Dual; No. of Pins: 6Pins; Operating Temperature Max: 150°C; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Power Dissipation Pd: 150mW; Termination Type: Surface Mount Device; Transistor Case Style: SOT-363; Transistor Polarity: NPN, PNP; Transistor Type: General Purpose; Transition Frequency ft: 250MHz

***ical: Trans Digital BJT NPN 50V 100mA 200mW 6-Pin US T/R

***el Electronic: Bipolar Transistors - Pre-Biased Bias Resistor Built-in transistor

***i-Key: TRANS 2NPN PREBIAS 0.2W US6

***: TRANS US6 PLN (LF) 200MW

Market price

부분 #	제조	설명	재고	가격
RN1971TE85LF DISTI # RN1971TE85LFTR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	3000:$0.0630
RN1971TE85LF DISTI # RN1971TE85LFCT-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	Limited Supply - Call
RN1971TE85LF DISTI # RN1971TE85LFDKR-ND	Toshiba America Electronic Components	TRANS 2NPN PREBIAS 0.2W US6 RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	Limited Supply - Call
RN1971TE85LF DISTI # 757-RN1971TE85LF	Toshiba America Electronic Components	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V RoHS: Compliant	0	1:$0.3900 10:$0.2170 100:$0.0930 1000:$0.0720 3000:$0.0540 9000:$0.0480 24000:$0.0450 45000:$0.0400 99000:$0.0390

영상	부분 #	설명
	Mfr.#: RN1971TE85LF OMO.#: OMO-RN1971TE85LF	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
	Mfr.#: RN1971FS(TPL3) OMO.#: OMO-RN1971FS-TPL3--123	Bipolar Transistors - Pre-Biased 50mA 20volts 6Pin 10Kohms
	Mfr.#: RN1971TE85LF OMO.#: OMO-RN1971TE85LF-TOSHIBA-SEMICONDUCTOR-AND-STOR	Bipolar Transistors - Pre-Biased BRT NPN 2-in-1 100mA 50V
	Mfr.#: RN1971FE(TE85LF)CT-ND OMO.#: OMO-RN1971FE-TE85LF-CT-ND-1190	신규 및 오리지널
	Mfr.#: RN1971FE(TE85LF)DKR-ND OMO.#: OMO-RN1971FE-TE85LF-DKR-ND-1190	신규 및 오리지널
	Mfr.#: RN1971FE(TE85LF)TR-ND OMO.#: OMO-RN1971FE-TE85LF-TR-ND-1190	신규 및 오리지널
	Mfr.#: RN1971TE85LFCT-ND OMO.#: OMO-RN1971TE85LFCT-ND-1190	신규 및 오리지널
	Mfr.#: RN1971TE85LFDKR-ND OMO.#: OMO-RN1971TE85LFDKR-ND-1190	신규 및 오리지널
	Mfr.#: RN1971TE85LFTR-ND OMO.#: OMO-RN1971TE85LFTR-ND-1190	신규 및 오리지널
	Mfr.#: RN1971FE OMO.#: OMO-RN1971FE-1190	신규 및 오리지널

RN1971TE85LF

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes