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IDW30G65C5XKSA1

IDW30G65C5XKSA1
Mfr. #:
IDW30G65C5XKSA1
제조사:
Infineon Technologies
설명:
Schottky Diodes & Rectifiers SIC DIODES
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IDW30G65C5XKSA1 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
IDW30G65C5XKSA1 추가 정보
제품 속성
속성 값
제조사:
인피니언
제품 카테고리:
쇼트키 다이오드 및 정류기
RoHS:
Y
제품:
쇼트키 탄화규소 다이오드
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
If - 순방향 전류:
30 A
Vrrm - 반복적인 역전압:
650 V
Vf - 순방향 전압:
1.5 V
Ifsm - 순방향 서지 전류:
165 A
구성:
하나의
기술:
SiC
Ir - 역전류:
1.6 uA
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 175 C
시리즈:
CoolSiC
포장:
튜브
상표:
인피니언 테크놀로지스
Pd - 전력 손실:
150 W
상품 유형:
쇼트키 다이오드 및 정류기
공장 팩 수량:
240
하위 카테고리:
다이오드 및 정류기
상표명:
CoolSiC
Vr - 역 전압:
650 V
부품 번호 별칭:
IDW30G65C5 SP001632892
단위 무게:
0.211644 oz
Tags
IDW30G6, IDW30G, IDW30, IDW3, IDW
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***ure Electronics
IDW30G65C5 Series 650 V 30 A Through Hole SiC Schottky Diode - TO-247-3
***ical
Diode Schottky 650V 30A 3-Pin(3+Tab) TO-247 Tube
***p One Stop Japan
Diode Schottky 650V 30A 3-Pin(3+Tab) TO-247
***et Europe
Diode Schottky 650V 30A 3-Pin TO-247 Tube
***o-Tech
SIC SCHOTTKY DIODE THINQ 650V 30A TO247
***i-Key
DIODE SCHOTTKY 650V 20A TO247-3
***ronik
SiC-D 650V 30A 1,5V TO247-3
***ukat
SiC-Schottky 650V 30A TO247
***ark
SIC SCHOTTKY DIODE, 650V, 30A, TO-247; Product Range:thinQ Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:30A; Total Capacitive Charge Qc:42nC; Diode Case Style:TO-247; No.RoHS Compliant: Yes
***ment14 APAC
Prices include import duty and tax. SIC SCHOTTKY DIODE, 650V, 30A, TO-247; Product Range:thinQ Series; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:650V; Continuous Forward Current If:30A; Total Capacitive Charge Qc:42nC; Diode Case Style:TO-247; No. of Pins:3 Pin; Junction Temperature Tj Max:175°C; Automotive Qualification Standard:-; SVHC:No SVHC (15-Jan-2019)
***nell
SIC SCHOTTKY DIODE, 30A, 650V, TO-247; Asortyment produktów:Seria thinQ 5G 650V; Konfiguracja diody:Pojedyncze; Powtarzalne napięcie wsteczne Vrrm, maks.:650V; Ciągły prąd przewodzenia If:30A; Całkowity ładunek pojemnościowy Qc:42nC; Rodzaj obudowy diody:TO-247; Liczba pinów:3 piny; Temperatura złącza Tj, maks.:175°C; Kwalifikacja motoryzacyjna:-; Substancje SVHC:No SVHC (27-Jun-2018); Liczba pinów:3piny/-ów; Napięcie przewodzenia VF, maks.:1.7V; Prąd przewodzenia If(AV):30A; Prąd udarowy przewodzenia Ifsm, maks.:165A; Technologia półprzewodnika:SiC; Temperatura robocza, maks.:175°C
***ineon
CoolSiC generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Q c x V f). The new CoolSiC Generation 5 has been designed to complement our 650V CoolMOS families: this ensures meeting the most stringent application requirements in this voltage range. | Summary of Features: V br at 650V; Improved figure of merit (Q c x V f); No reverse recovery charge; Soft switching reverse recovery waveform; Temperature independent switching behavior; High operating temperature (T j max 175C); Improved surge capability; Pb-free lead plating | Benefits: Higher safety margin against overvoltage and complements CoolMOS offer; Improved efficiency over all load conditions; Increased efficiency compared to Silicon Diode alternatives; Reduced EMI compared to snappier Silicon diode reverse recovery waveform; Highly stable switching performance; Reduced cooling requirements; Reduced risks of thermal runaway; RoHS compliant; Very high quality and high volume manufacturing capability | Target Applications: Telecom/server SMPS; Solar; UPS; PC power; LED/LCD TV; Motor drives; HID lighting
CoolSiC™ Schottky Diodes
Infineon CoolSiC™ Schottky Diodes deliver high reliability, optimum efficiency, and industry-leading SiC performance. The Infineon comprehensive portfolio of Silicon Carbide (SiC) devices encompasses 600V and 650V to 1200V Schottky diodes. A much higher breakdown voltage can be reached in SiC material Schottky diodes.
부분 # 제조 설명 재고 가격
IDW30G65C5XKSA1
DISTI # IDW30G65C5XKSA1-ND		Infineon Technologies AGDIODE SCHOTTKY 650V 30A TO247-3
RoHS: Compliant
Min Qty: 1
Container: Tube		877In Stock
  • 720:$8.2334
  • 240:$9.2555
  • 25:$10.5048
  • 10:$10.9590
  • 1:$11.9200
IDW30G65C5XKSA1
DISTI # SP001632892		Infineon Technologies AGSIC DIODES (Alt: SP001632892)
RoHS: Compliant
Min Qty: 1		Europe - 45
  • 1000:€6.2900
  • 500:€6.6900
  • 100:€6.9900
  • 50:€7.1900
  • 25:€7.4900
  • 10:€7.7900
  • 1:€8.4900
IDW30G65C5XKSA1
DISTI # IDW30G65C5XKSA1		Infineon Technologies AGSIC DIODES - Rail/Tube (Alt: IDW30G65C5XKSA1)
RoHS: Compliant
Min Qty: 240
Container: Tube		Americas - 0
  • 2400:$7.1900
  • 1440:$7.2900
  • 960:$7.5900
  • 480:$7.7900
  • 240:$8.0900
IDW30G65C5XKSA1
DISTI # 726-IDW30G65C5XKSA1		Infineon Technologies AGSchottky Diodes & Rectifiers SIC DIODES
RoHS: Compliant		234
  • 1:$11.9100
  • 10:$10.9600
  • 25:$10.5100
  • 50:$10.5000
  • 100:$9.2500
  • 250:$8.8000
  • 500:$8.2300
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TWW5J3R9E

Mfr.#: TWW5J3R9E

OMO.#: OMO-TWW5J3R9E

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OMO.#: OMO-114991438

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OMO.#: OMO-56100C-MURATA-POWER-SOLUTIONS

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82635AWGDVKPRQ

Mfr.#: 82635AWGDVKPRQ

OMO.#: OMO-82635AWGDVKPRQ-INTEL

 CAMERA MOD 82635AWGDVKPRQ
TWW5J3R9E

Mfr.#: TWW5J3R9E

OMO.#: OMO-TWW5J3R9E-OHMITE

 Wirewound Resistors - Through Hole 5watt 3.9ohm 5% Vertical Mount
1EDN8550BXTSA1

Mfr.#: 1EDN8550BXTSA1

OMO.#: OMO-1EDN8550BXTSA1-INFINEON-TECHNOLOGIES

 DRIVER IC (Alt: SP001690388)
유효성
재고:
458
주문 시:
2441
수량 입력:
IDW30G65C5XKSA1의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
1
US$11.91
US$11.91
10
US$10.96
US$109.60
25
US$10.51
US$262.75
50
US$10.50
US$525.00
100
US$9.25
US$925.00
250
US$8.80
US$2 200.00
500
US$8.23
US$4 115.00
시작
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