S29GL01GS11DHB013

S29GL01GS11DHB013
Mfr. #:
S29GL01GS11DHB013
제조사:
Cypress Semiconductor
설명:
NOR Flash Nor
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
S29GL01GS11DHB013 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
추가 정보:
S29GL01GS11DHB013 추가 정보 S29GL01GS11DHB013 Product Details
제품 속성
속성 값
제조사:
사이프러스 반도체
제품 카테고리:
NOR 플래시
RoHS:
Y
시리즈:
S29GL01G/512/256/128S
자격:
AEC-Q100
포장:
메모리 유형:
도 아니다
상표:
사이프러스 반도체
습기에 민감한:
상품 유형:
NOR 플래시
공장 팩 수량:
2200
하위 카테고리:
메모리 및 데이터 저장
상표명:
미러비트 이클립스
Tags
S29GL01GS11DHB, S29GL01GS11D, S29GL01GS11, S29GL01GS, S29GL01G, S29GL01, S29GL0, S29GL, S29G, S29
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***et
NOR FLASH X 16 1GBIT 105C 9MM X 9MM BGA
***i-Key
IC FLASH 1G PARALLEL 64BGA
***ark
TAPE AND REEL / 1G BIT, 3V, 110NS, 64-BALL FBGA, PAGE MODE FLASH MEMORY FEATURING 65 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED
S29 GL-S MirrorBit® Eclipse™ Flash
Cypress S29 GL-S MirrorBit® Eclipse™ Flash products are fabricated on 65nm process technology. These devices offer a fast page access time - as fast as 15ns with a corresponding random access time as fast as 90ns. MirrorBit® Eclipse™ Flash non-volatile memory is a CMOS 3V core with versatile I/O interface. S29 GL-S MirrorBit® Eclipse™ Flash features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation. This results in faster effective programming time than standard programming algorithms. Programming time makes the S29 GL-S flash ideal for today's embedded applications that require higher density, better performance, and lower power consumption.
부분 # 제조 설명 재고 가격
IS29GL01GS-11DHB013
DISTI # IS29GL01GS-11DHB013-ND
Cypress SemiconductorIC FLASH 1G PARALLEL
RoHS: Compliant
Min Qty: 2200
Container: Tape & Reel (TR)
Limited Supply - Call
    S29GL01GS11DHB013
    DISTI # S29GL01GS11DHB013-ND
    Cypress SemiconductorIC FLASH 1G PARALLEL 64BGA
    RoHS: Compliant
    Min Qty: 2200
    Container: Tape & Reel (TR)
    Temporarily Out of Stock
    • 2200:$10.7980
    S29GL01GS11DHB013
    DISTI # 727-29GL01GS11DHB013
    Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant
    0
    • 2200:$11.0100
    IS29GL01GS-11DHB013
    DISTI # 727-IS29GL01GS11DH13
    Cypress SemiconductorNOR Flash Nor
    RoHS: Compliant
    0
      영상 부분 # 설명
      S29GL01GT12TFVV20

      Mfr.#: S29GL01GT12TFVV20

      OMO.#: OMO-S29GL01GT12TFVV20

      NOR Flash NOR
      S29GL01GT11TFIV33

      Mfr.#: S29GL01GT11TFIV33

      OMO.#: OMO-S29GL01GT11TFIV33

      NOR Flash Nor
      S29GL01GT11FAIV23

      Mfr.#: S29GL01GT11FAIV23

      OMO.#: OMO-S29GL01GT11FAIV23

      NOR Flash Nor
      S29GL01GS11FAIV20

      Mfr.#: S29GL01GS11FAIV20

      OMO.#: OMO-S29GL01GS11FAIV20-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL 64BGA GL-S
      S29GL01GT11TFIV10

      Mfr.#: S29GL01GT11TFIV10

      OMO.#: OMO-S29GL01GT11TFIV10-CYPRESS-SEMICONDUCTOR

      Flash Memory 1 GBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO
      S29GL01GS11DHSS63

      Mfr.#: S29GL01GS11DHSS63

      OMO.#: OMO-S29GL01GS11DHSS63-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL 64BGA GL-S
      S29GL01GT10GHI010

      Mfr.#: S29GL01GT10GHI010

      OMO.#: OMO-S29GL01GT10GHI010-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL GL-T
      S29GL01GT13TFNV23

      Mfr.#: S29GL01GT13TFNV23

      OMO.#: OMO-S29GL01GT13TFNV23-CYPRESS-SEMICONDUCTOR

      Flash Memory 1 GBIT, 3V, 110NS, 56-LEAD TSOP, PAGE MODE FLASH MEMORY FEATURING 45 NM MIRRORBIT PROCESS TECHNOLOGY, HIGHEST ADDRESS SECTOR PROTECTED, VIO
      S29GL01GT11FHIV20

      Mfr.#: S29GL01GT11FHIV20

      OMO.#: OMO-S29GL01GT11FHIV20-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL 64FBGA GL-T
      S29GL01GP11FFIR20

      Mfr.#: S29GL01GP11FFIR20

      OMO.#: OMO-S29GL01GP11FFIR20-CYPRESS-SEMICONDUCTOR

      IC FLASH 1G PARALLEL 64BGA GL-P
      유효성
      재고:
      Available
      주문 시:
      2000
      수량 입력:
      S29GL01GS11DHB013의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
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