IPA60R750E6XKSA1

Mfr. #:: IPA60R750E6XKSA1
제조사:: Infineon Technologies
설명:: MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: IPA60R750E6XKSA1 데이터 시트
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ECAD Model:

제품 속성
속성 값

제조사:: 인피니언

제품 카테고리:: MOSFET

RoHS:: Y

기술:: 시

장착 스타일:: 구멍을 통해

패키지/케이스:: TO-220FP-3

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 600 V

Id - 연속 드레인 전류:: 5.7 A

Rds On - 드레인 소스 저항:: 680 mOhms

Vgs th - 게이트 소스 임계 전압:: 2.5 V

Vgs - 게이트 소스 전압:: 20 V

Qg - 게이트 차지:: 17.2 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 27 W

구성:: 하나의

채널 모드:: 상승

상표명:: 쿨모스

포장:: 튜브

키:: 16.15 mm

길이:: 10.65 mm

시리즈:: CoolMOS E6

트랜지스터 유형:: 1 N-Channel

너비:: 4.85 mm

상표:: 인피니언 테크놀로지스

가을 시간:: 12 ns

상품 유형:: MOSFET

상승 시간:: 7 ns

공장 팩 수량:: 500

하위 카테고리:: MOSFET

일반적인 끄기 지연 시간:: 50 ns

일반적인 켜기 지연 시간:: 9 ns

부품 번호 별칭:: IPA60R750E6 IPA6R75E6XK SP000842480

단위 무게:: 0.211644 oz

Tags: IPA60R7, IPA60R, IPA60, IPA6, IPA

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

IPA60R750E6XKSA1 설명

***el Electronic: In a Pack of 10, N-Channel MOSFET, 5.7 A, 600 V, 3-Pin TO-220FP Infineon IPA60R750E6XKSA1

***ical: Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: CoolMOS™ E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ark: Mosfet, N-Ch, 650V, 5.7A, To-220Fp-3; Transistor Polarity:n Channel; Continuous Drain Current Id:5.7A; Drain Source Voltage Vds:650V; On Resistance Rds(On):0.68Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power Rohs Compliant: Yes

***ineon: CoolMOS E6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease-of-use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Very high commutation ruggedness; Extremely low losses due to very low Figure of Merit (R DS(ON)*Q g) and E oss); Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***emi: N-Channel Power MOSFET, SUPERFET® II, FAST, 600 V, 7.4 A, 600 mΩ, TO-220F

***ark: SuperFET2, 600mohm, TO220F, Zener - TO220, MOLDED, 3LD, FULL PACK, EIAJ SC91, STRAIGHT LEAD

*** Stop Electro: Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET

***Yang: Trans MOSFET N-CH 600V 7.4A 3-Pin TO-220F Tube - Rail/Tube

***rchild Semiconductor: SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

***ineon SCT: Single N-Channel 600 V 0.65 Ohm 20.5 nC CoolMOS Power Mosfet - TO-220-3FP, PG-TO220-3, RoHS

***ow.cn: Trans MOSFET N-CH 600V 9.9A 3-Pin(3+Tab) TO-220FP Tube

***ark: MOSFET, N-CH, 600V, 9.9A, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.54ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; Power RoHS Compliant: Yes

***ineon: Summary of Features: Narrow margins between typical and max R DS(on); Reduced energy stored in output capacitance (E oss); Good body diode ruggedness and reduced reverse recovery charge (Q rr); Optimized integrated R g | Benefits: Low conduction losses; Low switching losses; Suitable for hard and soft switching; Easy controllable switching behavior; Improved efficiencyand consequent reduction of power consumption; Less design in effort; Easy to use | Target Applications: Laptop and notebook adapter; Low power charger; Lighting; LCD and LED TV

***el Electronic: Shift Register Single 8-Bit Serial/Parallel to Serial Automotive 16-Pin SOIC T/R

*** Electronics: Trans MOSFET N-CH 650V 7.3A 3-Pin(3+Tab) TO-251 Tube

***nsix Microsemi: 600V 0.6ohm 1-Element N-Channel Silicon Metal-oxide Semiconductor FET TO-251AA

***ronik: N-CH 650V 7,3A 600mOhm TO251-3 RoHSconf

***ure Electronics: Single N-Channel 600 V 950 mOhm 13 nC CoolMOS Power Mosfet - TO-220-3-FP

***p One Stop: Trans MOSFET N-CH 600V 4.4A 3-Pin(3+Tab) TO-220FP Tube

***ineon SCT: CoolMOS™ C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation, PG-TO220-3, RoHS

***ment14 APAC: MOSFET,N CH,600V,4.4A,TO220-FP; Transistor Polarity:N Channel; Continuous Drain Current Id:4.4A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.86ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:26W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:4.4A; Power Dissipation Pd:26W; Voltage Vgs Max:30V

***ineon: CoolMOS C6 combines Infineon's experience as the leading superjunction MOSFET supplier with best-in-class innovation. The C6 devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, compact, lighter and cooler. | Summary of Features: Easy control of switching behavior; Extremely low losses due to very low Figure of Merit (R DS(on)* Q g and E oss); Very high commutation ruggedness; Easy to use; Better light load efficiency compared to C3; Outstanding reliability with proven CoolMOS quality combined with high body diode ruggedness; Better price performance in comparison to previous CoolMOS generations; More efficient, more compact, lighter and cooler | Benefits: Improved power density; Improved reliability; General purpose part can be used in both soft and hard switching topologies; Better light load effciency; Improved effciency in hard switching applications; Improved ease-of-use; Reduces possible ringing due to pcb layout and package parasitic effects | Target Applications: Consumer; Adapter; eMobility; PFC stages for server & telecom; SMPS; PC power; Solar; Lighting

***(Formerly Allied Electronics): IRFBC40PBF N-channel MOSFET Transistor, 6.2 A, 600 V, 3-Pin TO-220AB

***ure Electronics: Single N-Channel 600 V 1.2 Ohms Flange Mount Power Mosfet - TO-220-3

***ical: Trans MOSFET N-CH 600V 6.2A 3-Pin (3+Tab) TO-220AB

***nell: MOSFET, N, 600V, 6.2A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 6.2A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 1.2ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4V; Power Dissipation Pd: 125W; Transistor Case Style: TO-220AB; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; Current Id Max: 6.2A; Current Temperature: 25°C; Full Power Rating Temperature: 25°C; Junction to Case Thermal Resistance A: 1°C/W; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to +150°C; Pulse Current Idm: 25A; Termination Type: Through Hole; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

***ical: Trans MOSFET N-CH 600V 7A 3-Pin(3+Tab) TO-220AB

*** Electronics: VISHAY SIHP7N60E-GE3 Power MOSFET, N Channel, 7 A, 600 V, 0.5 ohm, 10 V, 2 V

***S.I.T. Europe - USA - Asia: Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

***nell: MOSFET, N-CH, 600V, 7A, TO220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.5ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:78W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220AB; No. of Pins:3; MSL:(Not Applicable); Operating Temperature Range:-55°C to +150°C; Voltage Vgs Max:30V

Market price

부분 #	제조	설명	재고	가격
IPA60R750E6XKSA1 DISTI # V99:2348_06384499	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	1000	100:$0.8624 25:$0.9008 10:$0.9705 1:$1.1027
IPA60R750E6XKSA1 DISTI # IPA60R750E6XKSA1-ND	Infineon Technologies AG	MOSFET N-CH 600V 5.7A TO220 RoHS: Compliant Min Qty: 1 Container: Tube	On Order	1000:$0.6683 500:$0.8465 100:$1.0915 10:$1.3810 1:$1.5600
IPA60R750E6XKSA1 DISTI # 31077642	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	1000	500:$0.7392 100:$0.8362 20:$1.0944
IPA60R750E6XKSA1 DISTI # 30355662	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	1000	100:$0.8607 25:$0.8991 12:$0.9685
IPA60R750E6XKSA1 DISTI # IPA60R750E6XKSA1	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: IPA60R750E6XKSA1) RoHS: Compliant Min Qty: 1000 Container: Tube	Americas - 0	1000:$0.5829 2000:$0.5619 3000:$0.5419 5000:$0.5229 10000:$0.5139
IPA60R750E6XKSA1 DISTI # 49AC0276	Infineon Technologies AG	MOSFET, N-CH, 650V, 5.7A, TO-220FP-3,Transistor Polarity:N Channel,Continuous Drain Current Id:5.7A,Drain Source Voltage Vds:650V,On Resistance Rds(on):0.68ohm,Rds(on) Test Voltage Vgs:10V,Threshold Voltage Vgs:3V,Power RoHS Compliant: Yes	490	1:$1.3300 10:$1.1400 100:$0.8710 500:$0.7700
IPA60R750E6XKSA1 DISTI # 726-IPA60R750E6XKSA1	Infineon Technologies AG	MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6 RoHS: Compliant	0	1:$1.3300 10:$1.1400 100:$0.8710 500:$0.7700
IPA60R750E6 DISTI # 726-IPA60R750E6	Infineon Technologies AG	MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6 RoHS: Compliant	0	1:$1.3300 10:$1.1400 100:$0.8710 500:$0.7700
IPA60R750E6XKSA1 DISTI # 8922315	Infineon Technologies AG	MOSFET N-CHANNEL 600V 5.7A COOLMOS TO220, PK	500	10:£0.8440 20:£0.7250 50:£0.6620 100:£0.5990 200:£0.5690
IPA60R750E6XKSA1 DISTI # C1S322000562208	Infineon Technologies AG	Trans MOSFET N-CH 600V 5.7A 3-Pin(3+Tab) TO-220FP Tube RoHS: Compliant	1000	100:$0.8607 25:$0.8991 10:$0.9685
IPA60R750E6XKSA1 DISTI # 2839444	Infineon Technologies AG	MOSFET, N-CH, 650V, 5.7A, TO-220FP-3 RoHS: Compliant	490	5:£0.7250 25:£0.6620 100:£0.5690 250:£0.5540 500:£0.5380
IPA60R750E6XKSA1 DISTI # 2839444	Infineon Technologies AG	MOSFET, N-CH, 650V, 5.7A, TO-220FP-3 RoHS: Compliant	490	5:$1.9500 25:$1.7000 100:$1.3900 250:$1.1700 500:$1.0100 1000:$0.9570 5000:$0.9080

영상	부분 #	설명
	Mfr.#: IPA60R750E6XKSA1 OMO.#: OMO-IPA60R750E6XKSA1	MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6
	Mfr.#: IPA60R750E6 OMO.#: OMO-IPA60R750E6	MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6
	Mfr.#: IPA60R750E6 TK6A60 OMO.#: OMO-IPA60R750E6-TK6A60-1190	신규 및 오리지널
	Mfr.#: IPA60R750E6(SP000842480) OMO.#: OMO-IPA60R750E6-SP000842480--1190	신규 및 오리지널
	Mfr.#: IPA60R750E6XKSA1 OMO.#: OMO-IPA60R750E6XKSA1-INFINEON-TECHNOLOGIES	MOSFET N-CH 600V 5.7A TO220
	Mfr.#: IPA60R750E6 OMO.#: OMO-IPA60R750E6-126	IGBT Transistors MOSFET N-Ch 650V 5.7A TO220FP-3 CoolMOS E6

IPA60R750E6XKSA1

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes