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| 부분 # | 제조 | 설명 | 재고 | 가격 |
|---|---|---|---|---|
| IPB26CNE8N G DISTI # IPB26CNE8NG-ND | Infineon Technologies AG | MOSFET N-CH 85V 35A TO263-3 RoHS: Compliant Min Qty: 1000 Container: Tape & Reel (TR) | Limited Supply - Call |
| 영상 | 부분 # | 설명 |
|---|---|---|
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Mfr.#: IPB260N06N3G OMO.#: OMO-IPB260N06N3G-1190 |
Power Field-Effect Transistor, 27A I(D), 60V, 0.0257ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
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Mfr.#: IPB260N06N3GATMA1 |
MOSFET N-CH 60V 27A TO263-3 |
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Mfr.#: IPB26CN10 OMO.#: OMO-IPB26CN10-1190 |
신규 및 오리지널 |
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Mfr.#: IPB26CN10N OMO.#: OMO-IPB26CN10N-1190 |
- Bulk (Alt: IPB26CN10N) |
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Mfr.#: IPB26CN10N G OMO.#: OMO-IPB26CN10N-G-1190 |
MOSFET N-Ch 100V 35A D2PAK-2 |
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Mfr.#: IPB26CN10NG OMO.#: OMO-IPB26CN10NG-1190 |
신규 및 오리지널 |
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Mfr.#: IPB26CN10NG(IRF540NS) |
신규 및 오리지널 |
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Mfr.#: IPB26CN10NGATMA1 |
MOSFET N-CH 100V 35A TO263-3 |
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Mfr.#: IPB26CNE8NG OMO.#: OMO-IPB26CNE8NG-1190 |
신규 및 오리지널 |
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Mfr.#: IPB260N06N3 G OMO.#: OMO-IPB260N06N3-G-126 |
IGBT Transistors MOSFET N-Ch 200V 27A D2PAK-2 |