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NDS8958

NDS8958
Mfr. #:
NDS8958
제조사:
ON Semiconductor
설명:
MOSFET N/P-CH 30V 5.3A/4A 8SOIC
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
NDS8958 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
ECAD Model:
제품 속성
속성 값
제조사
페어차일드 반도체
제품 카테고리
FET - 어레이
시리즈
-
포장
디지릴R
패키지 케이스
8-SOIC (0.154", 3.90mm Width)
작동 온도
-55°C ~ 150°C (TJ)
장착형
표면 실장
공급자-장치-패키지
8-SO
FET형
N 및 P-채널
파워맥스
900mW
드레인-소스 전압 Vdss
30V
입력-커패시턴스-Ciss-Vds
720pF @ 15V
FET 기능
로직 레벨 게이트
Current-Continuous-Drain-Id-25°C
5.3A, 4A
Rds-On-Max-Id-Vgs
35 mOhm @ 5.3A, 10V
Vgs-th-Max-Id
2.8V @ 250μA
Gate-Charge-Qg-Vgs
30nC @ 10V
Tags
NDS895, NDS89, NDS8, NDS
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***th Star Micro
Transistor MOSFET N/P-CH 30V 5.3A/4A 8-Pin SOIC N T/R
***ment14 APAC
MOSFET, DUAL, NP, SO-8; Transistor Polarity:N and P Channel; Continuous Drain Current Id:4A; Drain Source Voltage Vds:30V; On Resistance Rds(on):65mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Power Dissipation Pd:2W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOIC; No. of Pins:8; Cont Current Id N Channel 2:5.3A; Cont Current Id P Channel:4A; Continuous Drain Current Id, N Channel:5.3A; Continuous Drain Current Id, P Channel:-4A; Current Id Max:5.3A; Current Temperature:25°C; Drain Source Voltage Vds, N Channel:30V; Drain Source Voltage Vds, P Channel:-30V; Full Power Rating Temperature:25°C; Module Configuration:Dual; No. of Transistors:2; On Resistance Rds(on), N Channel:0.033ohm; On Resistance Rds(on), P Channel:0.052ohm; On State Resistance Channel 1:50mohm; On State Resistance P Channel 2:100mohm; Package / Case:SOIC; Power Dissipation N Channel 2:2W; Power Dissipation P Channel 2:2W; Power Dissipation Pd:1.6W; Pulse Current Idm:15A
***rchild Semiconductor
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
부분 # 제조 설명 재고 가격
NDS8958
DISTI # NDS8958TR-ND		ON SemiconductorMOSFET N/P-CH 30V 5.3A/4A 8SOIC
RoHS: Compliant
Min Qty: 2500
Container: Tape & Reel (TR)		Limited Supply - Call
    NDS8958
    DISTI # NDS8958CT-ND    		ON SemiconductorMOSFET N/P-CH 30V 5.3A/4A 8SOIC
    RoHS: Compliant
    Min Qty: 1
    Container: Cut Tape (CT)    		Limited Supply - Call
      NDS8958
      DISTI # NDS8958DKR-ND      		ON SemiconductorMOSFET N/P-CH 30V 5.3A/4A 8SOIC
      RoHS: Compliant
      Min Qty: 1
      Container: Digi-Reel®      		Limited Supply - Call
        NDS8958
        DISTI # 512-NDS8958        		ON SemiconductorMOSFET Dual N/P Channel FET Enhancement Mode
        RoHS: Compliant        		0
          NDS8958Fairchild Semiconductor Corporation 54
            NDS8958Fairchild Semiconductor Corporation 
            RoHS: Not Compliant            		Europe - 2350
              NDS8958
              DISTI # 1017727              		ON SemiconductorMOSFET, DUAL, NP, SO-8
              RoHS: Compliant              		0
              • 1:$2.8500
              • 10:$2.3900
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              		 신규 및 오리지널
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              		 신규 및 오리지널
              NDS9407_Q

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              		 MOSFET Single P-Ch MOSFET Power Trench
              유효성
              재고:
              Available
              주문 시:
              2500
              수량 입력:
              NDS8958의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
              참고 가격(USD)
              수량
              단가
              내선 가격
              1
              US$0.00
              US$0.00
              10
              US$0.00
              US$0.00
              100
              US$0.00
              US$0.00
              500
              US$0.00
              US$0.00
              1000
              US$0.00
              US$0.00
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