IXFH4N100Q

IXFH4N100Q
Mfr. #:
IXFH4N100Q
제조사:
Littelfuse
설명:
MOSFET 4 Amps 1000V 2.8 Rds
수명 주기:
이 제조업체의 새 제품입니다.
데이터 시트:
IXFH4N100Q 데이터 시트
배달:
DHL FedEx Ups TNT EMS
지불:
T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:
IXFH4N100Q DatasheetIXFH4N100Q Datasheet (P4)
ECAD Model:
제품 속성
속성 값
제조사:
익시스
제품 카테고리:
MOSFET
RoHS:
Y
기술:
장착 스타일:
구멍을 통해
패키지/케이스:
TO-247-3
채널 수:
1 Channel
트랜지스터 극성:
N-채널
Vds - 드레인 소스 항복 전압:
1 kV
Id - 연속 드레인 전류:
4 A
Rds On - 드레인 소스 저항:
3 Ohms
Vgs - 게이트 소스 전압:
20 V
최소 작동 온도:
- 55 C
최대 작동 온도:
+ 150 C
Pd - 전력 손실:
150 W
구성:
하나의
채널 모드:
상승
상표명:
하이퍼펫
포장:
튜브
키:
21.46 mm
길이:
16.26 mm
시리즈:
IXFH4N100
트랜지스터 유형:
1 N-Channel
너비:
5.3 mm
상표:
익시스
가을 시간:
18 ns
상품 유형:
MOSFET
상승 시간:
15 ns
공장 팩 수량:
30
하위 카테고리:
MOSFET
일반적인 끄기 지연 시간:
32 ns
일반적인 켜기 지연 시간:
17 ns
단위 무게:
0.229281 oz
Tags
IXFH4N100Q, IXFH4N, IXFH4, IXFH, IXF
Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1: Vacuum Packaging with PL
Step1:
Vacuum Packaging with PL
Step2: Anti-Static Bag
Step2:
Anti-Static Bag
Step3: Packaging Boxes
Step3:
Packaging Boxes
***el Electronic
MOSFET N-CH 1000V 4A TO-247AD
***el Nordic
Contact for details
***r Electronics
Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 1050 V, 1.4 Ohm typ., 4 A MDmesh K5 Power MOSFETs in TO-247 package
***ical
Trans MOSFET N-CH 1.05KV 4A 3-Pin(3+Tab) TO-247 Tube
***r Electronics
Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***icroelectronics
N-channel 1050 V, 1 Ohm typ., 6 A MDmesh K5 Power MOSFETs in TO-247 package
***ical
Trans MOSFET N-CH 1.05KV 6A 3-Pin(3+Tab) TO-247 Tube
***icroelectronics SCT
Power MOSFETs, 1050V, 6A, TO-247, Tube
***icroelectronics
N-channel 850 V, 0.2 Ohm typ., 19 A MDmesh K5 Power MOSFET in a TO-247 package
***r Electronics
Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
***ure Electronics
N-Channel 850 V 0.275 Ohm Flange Mount Power Mosfet - TO-247
***emi
N-Channel Power MOSFET, SUPERFET® II, 800 V, 58 A, 60 mΩ, TO-247
***r Electronics
Power Field-Effect Transistor, 58A I(D), 800V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247
***el Electronic
Aluminum Electrolytic Capacitors 680μF Radial, Can - SMD ±20% Tape & Reel (TR) FT 0.413 10.50mm Surface Mount Automotive, High Temperature Reflow CAP ALUM 680UF 20% 35V SMD
***nell
MOSFET, N CHANNEL, 800V, 58A, TO-247-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 58A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 0.054ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 4
***rchild Semiconductor
SuperFET®II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology istailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
부분 # 제조 설명 재고 가격
IXFH4N100Q
DISTI # IXFH4N100Q-ND
IXYS CorporationMOSFET N-CH 1000V 4A TO-247AD
RoHS: Compliant
Min Qty: 30
Container: Tube
Temporarily Out of Stock
  • 30:$5.7810
IXFH4N100Q
DISTI # 747-IXFH4N100Q
IXYS CorporationMOSFET 4 Amps 1000V 2.8 Rds
RoHS: Compliant
0
  • 30:$7.0500
  • 60:$6.9100
  • 120:$6.6500
  • 270:$5.6800
  • 510:$5.3800
  • 1020:$4.5400
IXFH4N100Q
DISTI # XSFT00000027581
IXYS CorporationSINGLE N-CHANNEL 1000 V 150 W 82 NC THROUGH HOLEPOWER MOSFET - TO-247
RoHS: Compliant
660 in Stock0 on Order
  • 30:$6.6800
영상 부분 # 설명
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OMO.#: OMO-IXFH400N075T2

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OMO.#: OMO-IXFH40N30

MOSFET 300V 40A
IXFH40N20

Mfr.#: IXFH40N20

OMO.#: OMO-IXFH40N20-1190

신규 및 오리지널
IXFH42N20P

Mfr.#: IXFH42N20P

OMO.#: OMO-IXFH42N20P-1190

신규 및 오리지널
IXFH46M65X2

Mfr.#: IXFH46M65X2

OMO.#: OMO-IXFH46M65X2-1190

신규 및 오리지널
IXFH40N50Q

Mfr.#: IXFH40N50Q

OMO.#: OMO-IXFH40N50Q-IXYS-CORPORATION

Darlington Transistors MOSFET 500V 40A
IXFH40N30

Mfr.#: IXFH40N30

OMO.#: OMO-IXFH40N30-IXYS-CORPORATION

MOSFET 300V 40A
유효성
재고:
Available
주문 시:
5500
수량 입력:
IXFH4N100Q의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.
참고 가격(USD)
수량
단가
내선 가격
30
US$7.05
US$211.50
60
US$6.91
US$414.60
120
US$6.65
US$798.00
270
US$5.68
US$1 533.60
510
US$5.38
US$2 743.80
1020
US$4.54
US$4 630.80
2520
US$3.89
US$9 802.80
시작
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