CSD16342Q5A

Mfr. #:: CSD16342Q5A
설명:: MOSFET N-Channel NexFET Power MOSFET
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: CSD16342Q5A 데이터 시트
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추가 정보:: CSD16342Q5A 추가 정보 CSD16342Q5A Product Details

제품 속성
속성 값

제조사:: 텍사스 인스트루먼트

제품 카테고리:: MOSFET

RoHS:: E

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: VSONP-8

채널 수:: 1 Channel

트랜지스터 극성:: N-채널

Vds - 드레인 소스 항복 전압:: 25 V

Id - 연속 드레인 전류:: 60 A

Rds On - 드레인 소스 저항:: 5.5 mOhms

Vgs - 게이트 소스 전압:: 10 V

Qg - 게이트 차지:: 6.5 nC

최소 작동 온도:: - 55 C

최대 작동 온도:: + 150 C

Pd - 전력 손실:: 3 W

구성:: 하나의

상표명:: 넥스펫

포장:: 릴

키:: 1 mm

길이:: 6 mm

시리즈:: CSD16342Q5A

트랜지스터 유형:: 1 N-Channel

너비:: 4.9 mm

상표:: 텍사스 인스트루먼트

상품 유형:: MOSFET

공장 팩 수량:: 2500

하위 카테고리:: MOSFET

단위 무게:: 0.003002 oz

Tags: CSD1634, CSD163, CSD16, CSD1, CSD

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
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Step3:
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CSD16342Q5A 설명

***as Instruments: 25-V, N channel NexFET™ power MOSFET, single SON 5 mm x 6 mm, 5.5 mOhm 8-VSONP -55 to 150

***nell: MOSFET, N-CH, 25V, 100A, VSON-8; Polarité transistor: Canal N; Courant de drain Id: 100A; Tension Vds max..: 25V; Résistance Rds(on): 0.0038ohm; Tension, mesure Rds: 8V; Tension de seuil Vgs: 850mV; Dissipation de puissance Pd

***ment14 APAC: MOSFET, N-CH, 25V, 100A, VSON-8; Transistor Polarity:N Channel; Continuous Drain Current Id:100A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0038ohm; Rds(on) Test Voltage Vgs:8V; Threshold Voltage Vgs:850mV; Power Dissipation Pd:3W; Transistor Case Style:VSON; No. of Pins:8Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:MSL 1 - Unlimited; SVHC:No SVHC (15-Jan-2019)

***emi: Power MOSFET 25 V, 124 A, Single N-Channel

***r Electronics: Power Field-Effect Transistor, 15.7A I(D), 25V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 25V 15.7A/128A DPAK

***peria: PSMN3R7-25YLC - N-channel 25 V 3.9 mΩ logic level MOSFET in LFPAK using NextPower technology

***ical: Trans MOSFET N-CH 25V 97A 5-Pin(4+Tab) LFPAK T/R

***el Electronic: AUTOMOTIVE DRIVER

***emi: Power MOSFET 25V 98A 4.3 mOhm Single N-Channel DPAK

***r Electronics: Power Field-Effect Transistor, 14A I(D), 25V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:25V; Continuous Drain Current, Id:18A; On Resistance, Rds(on):3.5mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:3-DPAK ;RoHS Compliant: Yes

***ineon SCT: 30V Single N-Channel HEXFET Power MOSFET in a 5mm X 6mm PQFN package, PQFN 5X6 8L, RoHS

***ure Electronics: Single N-Channel 30 V 3.3 mOhm 34 nC HEXFET® Power Mosfet - PQFN 5 x 6 mm

***et Europe: Transistor MOSFET N-CH 30V 25A 8-Pin QFN T/R

***ark: Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:24mA; On Resistance, Rds(on):0.033ohm; Rds(on) Test Voltage, Vgs:10V; Threshold Voltage, Vgs Typ:1.8V ;RoHS Compliant: Yes

***ineon: Benefits: RoHS Compliant; Industry-leading quality; 100% Rg tested; Low RDS(ON) at 4.5V VGS; Very Low Gate Charge; Fully Characterized Avalanche Voltage and Current | Target Applications: Isolated Primary Side MOSFETs; Isolated Secondary Side SyncRec MOSFETs; Point of Load ControlFET

***ment14 APAC: MOSFET, N, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):3.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:3.4W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:PQFN; No. of Pins:8; MSL:MSL 2 - 1 year; SVHC:No SVHC (20-Jun-2011); Current Id Max:25A; Package / Case:PQFN; Power Dissipation Pd:3.4W; Pulse Current Idm:200A; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:2.35V

***ser: MOSFETs- Power and Small Signal 24V 110A N-Channel No-Cancel/No-Return

***r Electronics: Power Field-Effect Transistor, 12.5A I(D), 24V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

***or: MOSFET N-CH 24V 12.5A/110A DPAK

***ure Electronics: Single N-Channel 25 V 3.7 mOhm 11 nC HEXFET® Power Mosfet - DirectFET®

***Yang: Trans MOSFET N-CH 25V 19A 6-Pin Direct-FET SQ T/R 4.8k - Tape and Reel

***ernational Rectifier: A 25V Single N-Channel HEXFET Power MOSFET in a DirectFET SQ package rated at 19 amperes optimized with low on resistance. Shipped in Tape and Reel only. Part is not available in bulk, TR is implied in part number.

***nell: MOSFET, N-CH, 25V, 74A, DIRECTFET SQ; Transistor Polarity: N Channel; Continuous Drain Current Id: 74A; Drain Source Voltage Vds: 25V; On Resistance Rds(on): 0.0028ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.6

***ineon: Benefits: RoHS Compliant; 100% Rg tested; Low Profile (less than 0.7 mm); Dual Sided Cooling; Optimized for Control FET Applications; Low Conduction Losses; Optimized for High Frequency Switching; Low Package Inductance | Target Applications: MultiPhase ControlFET

***AS INSRUMENT: The NexFET power MOSFET has been designed to minimize losses in power conversion and optimized for 5V gate drive applications.

CSD16342Q5A 추가 정보

NexFET N-Channel Power MOSFETs: OMO Electronic NexFET N-Channel Power MOSFETs are designed to minimize losses in power conversion applications. These N-channel devices feature ultra low Qg and Qd and low thermal resistance. These devices are avalanche rated and come in a SON 5mm x 6mm plastic package.

TI N-Channel 8-23-12

NexFET™ Power MOSFETs: OMO Electronic NexFET™ Power MOSFETs deliver half the gate charge for the same resistance so that designers can achieve 90% power-supply efficiencies with double the frequency. These NexFET power MOSFETs combine vertical current flow with a lateral power MOSFET. These devices provide a low on resistance and require an extremely low gate charge with industry-standard package outlines. This combination was not previously possible with existing silicon platforms. OMO Electronic NexFET™ Power MOSFET technology improves energy efficiency in high-power computing, networking, server systems, and power supplies.

Market price

부분 #	설명	재고	가격
CSD16342Q5A DISTI # V98:2334_07248735	Trans MOSFET N-CH 25V 21A 8-Pin VSONP EP T/R RoHS: Compliant	918	500:$0.5860 250:$0.6575 100:$0.6581 25:$0.8402 10:$0.8412 1:$0.9777
CSD16342Q5A DISTI # 296-30314-1-ND	MOSFET N-CH 25V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	2596In Stock	1000:$0.5404 500:$0.6846 100:$0.8827 10:$1.1170 1:$1.2600
CSD16342Q5A DISTI # 296-30314-6-ND	MOSFET N-CH 25V 100A 8SON RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	2596In Stock	1000:$0.5404 500:$0.6846 100:$0.8827 10:$1.1170 1:$1.2600
CSD16342Q5A DISTI # 296-30314-2-ND	MOSFET N-CH 25V 100A 8SON RoHS: Compliant Min Qty: 2500 Container: Tape & Reel (TR)	On Order	5000:$0.4652 2500:$0.4897
CSD16342Q5A DISTI # 27544534	Trans MOSFET N-CH 25V 21A 8-Pin VSONP EP T/R RoHS: Compliant	918	500:$0.5860 250:$0.6575 100:$0.6580 25:$0.8402 16:$0.8412
CSD16342Q5A DISTI # CSD16342Q5A	Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R - Tape and Reel (Alt: CSD16342Q5A) RoHS: Compliant Min Qty: 2500 Container: Reel	Americas - 0	2500:$0.4609 5000:$0.4389 10000:$0.4239 15000:$0.4099 25000:$0.3989
CSD16342Q5A DISTI # CSD16342Q5A	Trans MOSFET N-CH 25V 21A 8-Pin SON EP T/R (Alt: CSD16342Q5A) RoHS: Compliant Min Qty: 2500 Container: Tape and Reel	Asia - 0
CSD16342Q5A DISTI # 71Y7088	MOSFET Transistor, N Channel, 100 A, 25 V, 0.0038 ohm, 8 V, 850 mV , RoHS Compliant: Yes	904	1:$1.0500 10:$0.8910 25:$0.8220 50:$0.7530 100:$0.6840 250:$0.6450 500:$0.6050 1000:$0.4770
CSD16342Q5A	N-Channel NexFET&#153,Power MOSFET....	4895	1000:$0.3600 750:$0.4000 500:$0.5100 250:$0.6200 100:$0.6700 25:$0.7900 10:$0.8500 1:$0.9500
CSD16342Q5A	Power Field-Effect Transistor, 21A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant	507	1000:$0.4700 500:$0.5000 100:$0.5200 25:$0.5400 1:$0.5800
CSD16342Q5A DISTI # 595-CSD16342Q5A	MOSFET N-Channel NexFET Power MOSFET RoHS: Compliant	1475	1:$1.0500 10:$0.8910 100:$0.6840 500:$0.6050 1000:$0.4770 2500:$0.4230
CSD16342Q5A DISTI # 8274739P	MOSFET N-CHANNEL 25V 21A NEXFET SON8EP, RL	2305	50:£0.3100
CSD16342Q5A DISTI # 2501087	MOSFET, N-CH, 25V, 100A, VSON-8 RoHS: Compliant	934	5:£0.7350 25:£0.6580 100:£0.5050 250:£0.4760 500:£0.4460
CSD16342Q5A DISTI # C1S746202593266	Trans MOSFET N-CH 25V 21A 8-Pin VSONP EP T/R RoHS: Compliant	918	250:$0.6575 100:$0.6581 10:$0.8412
CSD16342Q5A DISTI # 2501087	MOSFET, N-CH, 25V, 100A, VSON-8 RoHS: Compliant	924	1:$1.6100 10:$1.3700 100:$1.0500 500:$0.9270 1000:$0.7300 2500:$0.6480 10000:$0.6250 22500:$0.6050

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유효성

재고:: Available
주문 시:: 1986
수량 입력:

CSD16342Q5A의 현재 가격은 참고용이며 최상의 가격을 원하시면 판매팀 [email protected]으로 문의 또는 다이렉트 이메일을 보내주십시오.

참고 가격(USD)

수량
단가
내선 가격

1: ~~US$1.04~~; ~~US$1.04~~

10: ~~US$0.89~~; ~~US$8.90~~

100: ~~US$0.68~~; ~~US$68.40~~

500: ~~US$0.60~~; ~~US$302.50~~

1000: ~~US$0.48~~; ~~US$477.00~~

시작

CSD1634 6
CSD163 33
CSD16 82
CSD1 359
CSD 800

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CSD16342Q5A

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes