HN1B04FE-Y,LF

Mfr. #:: HN1B04FE-Y,LF
제조사:: Toshiba
설명:: Bipolar Transistors - BJT Transistor for Low Freq Sm-Signal Amp
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: HN1B04FE-Y,LF 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
HTML Datasheet:: HN1B04FE-Y,LF Datasheet HN1B04FE-Y,LF Datasheet (P4-P6)
ECAD Model:

제품 속성
속성 값

제조사:: 도시바

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

기술:: 시

장착 스타일:: SMD/SMT

패키지/케이스:: SOT-563-6

트랜지스터 극성:: NPN, PNP

구성:: 듀얼

컬렉터-이미터 전압 VCEO 최대:: 50 V

컬렉터-베이스 전압 VCBO:: 60 V, - 50 V

이미터-베이스 전압 VEBO:: 5 V

수집기-이미터 포화 전압:: 100 mV

최대 DC 수집기 전류:: 150 mA

이득 대역폭 곱 fT:: 80 MHz, 80 MHz

최대 작동 온도:: + 150 C

시리즈:: HN1B04

DC 전류 이득 hFE 최대:: 400

포장:: 릴

상표:: 도시바

DC 수집기/기본 이득 hfe 최소:: 120

Pd - 전력 손실:: 100 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 4000

하위 카테고리:: 트랜지스터

단위 무게:: 0.000106 oz

Tags: HN1B04FE-Y, HN1B04FE, HN1B04, HN1B0, HN1B, HN1

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We provide 90-360 days warranty.

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Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

HN1B04FE-Y,LF 설명

***ical: Trans GP BJT NPN/PNP 50V 0.15A 100mW 6-Pin ES T/R

***i-Key: TRANS NPN/PNP 50V 0.15A ES6

***et: ES6 PLN(LF),ACTIVE

***ical: Trans GP BJT NPN 50V 0.15A 320mW 3-Pin SOT-23

***el Electronic: SMCJ Series 38.9 V 1.5 kW Surface Mount Uni-Directional TVS Diode - DO-214AB

***enic: 30nA 50V 320mW 150mA 290@2mA,5V 100MHz 170mV@100mA,5mA NPN +150¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***or: X34 PB-F SOT-23 TRANSISTOR FOR L

***-Wing Technology: Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 180 @ 1mA 6V 150mA 150mW 100MHz

***ical: Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R

***peria: 2PC4617 - NPN general-purpose transistor

***ment14 APAC: TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:180; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:180; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose

***-Wing Technology: Tape & Reel (TR) Surface Mount PNP SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz

***p One Stop: Trans GP BJT PNP 50V 0.15A Automotive 3-Pin SC-75 T/R

***peria: 2PA1774 - PNP general-purpose transistor

*** Americas: PNP transistor in a SOT416 (SC-75) plastic package

***-Wing Technology: Tape & Reel (TR) Surface Mount NPN SINGLE Bipolar (BJT) Transistor 120 @ 1mA 6V 150mA 150mW 100MHz

***p One Stop: Trans GP BJT NPN 50V 0.15A Automotive 3-Pin SC-75 T/R

***peria: 2PC4617 - NPN general-purpose transistor

***ment14 APAC: TRANSISTOR NPN 50V 0.15A SC-75; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency Typ ft:100MHz; Power Dissipation Pd:150mW; DC Collector Current:150mA; DC Current Gain hFE:120; Operating Temperature Range:-65°C to +150°C; Transistor Case Style:SOT-416; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:200mV; Current Ic Continuous a Max:50mA; Gain Bandwidth ft Typ:100MHz; Hfe Min:120; Package / Case:SOT-416; Power Dissipation Pd:150mW; Termination Type:SMD; Transistor Type:General Purpose

***et: Trans GP BJT PNP 50V 0.15A 3-Pin S-Mini Embossed T/R

***enic: 50V 150mW 150mA 70@2mA,6V 80MHz 100mV@100mA,10mA PNP +125¡æ@(Tj) SOT-23(SOT-23-3) Bipolar Transistors - BJT ROHS

***: TRANS S-MINI PLN

*** Source Electronics: Trans GP BJT NPN 50V 0.15A 150mW 3-Pin VESM T/R / TRANS NPN 50V 0.15A VESM

***enic: 50V 150mW 150mA 200@2mA,6V 60MHz 150mV@100mA,10mA NPN +150¡æ@(Tj) SOT-723 Bipolar Transistors - BJT ROHS

***: VESM PLN ACTIVE

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