55GN01MA-TL-E

Mfr. #:: 55GN01MA-TL-E
제조사:: ON Semiconductor
설명:: Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
수명 주기:: 이 제조업체의 새 제품입니다.
데이터 시트:: 55GN01MA-TL-E 데이터 시트
배달:: DHL FedEx Ups TNT EMS
지불:: T/T Paypal Visa MoneyGram Western Union
ECAD Model:

제품 속성
속성 값

제조사:: 온세미컨덕터

제품 카테고리:: 양극성 트랜지스터 - BJT

RoHS:: Y

장착 스타일:: SMD/SMT

패키지/케이스:: MCPH-3

트랜지스터 극성:: NPN

컬렉터-이미터 전압 VCEO 최대:: 10 V

이미터-베이스 전압 VEBO:: 3 V

시리즈:: 55GN01MA

포장:: 릴

상표:: 온세미컨덕터

지속적인 수집가 전류:: 70 mA

DC 수집기/기본 이득 hfe 최소:: 200

Pd - 전력 손실:: 400 mW

상품 유형:: BJT - 양극성 트랜지스터

공장 팩 수량:: 3000

하위 카테고리:: 트랜지스터

Tags: 55GN01M, 55GN0, 55GN, 55G

Service Guarantees

We guarantee 100% customer satisfaction.

Quality Guarantees

We provide 90-360 days warranty.

If the items you received were not in perfect quality, we would be responsible for your refund or replacement, but the items must be returned in their original condition.
Our experienced sales team and tech support team back our services to satisfy all our customers.

we buy and manage excess electronic components, including excess inventory identified for disposal.
Email us if you have excess stock to sell.

Email: [email protected]

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes

55GN01MA-TL-E 설명

***emi: RF Transistor, NPN Single, 10 V, 70 mA, fT = 5.5 GHz

***r Electronics: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, NPN

***(Formerly Allied Electronics): ON Semi 55GN01MA-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 55GN01MA-TL-E

***emi: RF Transistor, NPN Single MCP, 10 V, 70 mA, fT = 7 GHz

***enic: 1Ã×A 10V 150mW 70mA 7GHz NPN +150¡Í@(Tj) SC-70 Bipolar Transistors - BJT ROHS

***(Formerly Allied Electronics): ON Semi 2SC5226A-4-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 2SC5226A-4-TL-E

***r Electronics: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

***ure Electronics: Bipolar Transistors - BJT VHF TO UHF WIDEBAND AMPLIFIER

***ment14 APAC: Transistor, RF, NPN, 10V, 7GHZ, SC-70; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Transition Frequency ft:7GHz; Power

***nell: TRANS, NPN, 10V, 0.07A, SOT323; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:10V; Typ Gain Bandwidth ft:7GHz; Power Dissipation Pd:150mW; DC Collector Current:70mA; DC Current Gain hFE:180; Transistor Case Style:SOT-323; No. of Pins:3

***ure Electronics: NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin SSFP tape & reel

***emi: RF Transistor, NPN Single, 10 V, 70 mA, fT = 7 GHz

***r Electronics: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, NPN

***enic: 1Ã×A 10V 100mW 70mA 90@20mA5V 7GHz NPN +150¡Í@(Tj) SC-81 Bipolar Transistors - BJT ROHS

***Yang: Trans GP BJT NPN 10V 0.07A 3-Pin SSFP T/R - Tape and Reel

***nell: TRANS, NPN, HIGH F, 10V, 0.07A, SSFP; Transistor Polarity:NPN; Collector-to-Emitter Breakdown Voltage:10V; Typ Gain Bandwidth ft:7GHz; Power Dissipation Pd:100mW; DC Collector Current:70mA; DC Current Gain hFE:200; Transistor Case Style:SC-81; No. of Pins:3

***emi: RF Transistor, NPN Single MCP, 10 V, 70 mA, fT = 7 GHz

***(Formerly Allied Electronics): ON Semi 2SC5226A-5-TL-E NPN RF Bipolar Transistor, 0.07 A, 10 V, 3-Pin MCP | ON Semiconductor 2SC5226A-5-TL-E

***r Electronics: RF Small Signal Bipolar Transistor, 0.07A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN

***Yang: Trans GP BJT NPN 10V 0.07A 3-Pin MCP T/R - Tape and Reel

***ark: RF Transistor, 10V, 70mA, fT=7GHz, NPN Single MCP / REEL

***-Wing Technology: Trans GP BJT NPN 12V 0.08A 3-Pin SOT-23 Emboss T/R

***i-Key: RF TRANS NPN 12V 7GHZ USM

***S: new, original packaged

***roFlash: Trans GP BJT NPN 12V 0.08A 3-Pin UFM Embossed T/R

***el Electronic: RF Bipolar Transistors Radio-Freq VHF/UHF 80mA 900mW 12V

***i-Key: RF TRANS NPN 12V 7GHZ UFM

***enic: 1Ã×A 12V 150mW 80mA 120@20mA10V 7GHz NPN +125¡Í@(Tj) SC-59 Bipolar Transistors - BJT ROHS

***ical: Trans RF BJT NPN 12V 0.08A 3-Pin S-Mini T/R

***i-Key: RF TRANS NPN 12V 7GHZ SC59

Market price

부분 #	제조	설명	재고	가격
55GN01MA-TL-E DISTI # 26735743	ON Semiconductor	Trans RF BJT NPN 10V 0.07A 3-Pin Case MCP T/R RoHS: Compliant	135000	75000:$0.0480 30000:$0.0539 15000:$0.0575 9000:$0.0647
55GN01MA-TL-E DISTI # 55GN01MA-TL-EOSCT-ND	ON Semiconductor	RF TRANS NPN 10V 5.5GHZ 3MCP RoHS: Compliant Min Qty: 1 Container: Cut Tape (CT)	5979In Stock	1000:$0.1003 500:$0.1308 100:$0.1974 10:$0.3490 1:$0.4700
55GN01MA-TL-E DISTI # 55GN01MA-TL-EOSDKR-ND	ON Semiconductor	RF TRANS NPN 10V 5.5GHZ 3MCP RoHS: Compliant Min Qty: 1 Container: Digi-Reel®	5979In Stock	1000:$0.1003 500:$0.1308 100:$0.1974 10:$0.3490 1:$0.4700
55GN01MA-TL-E DISTI # 55GN01MA-TL-EOSTR-ND	ON Semiconductor	RF TRANS NPN 10V 5.5GHZ 3MCP RoHS: Compliant Min Qty: 3000 Container: Tape & Reel (TR)	3000In Stock	75000:$0.0564 30000:$0.0635 15000:$0.0677 6000:$0.0762 3000:$0.0846
55GN01MA-TL-E DISTI # 55GN01MA-TL-E	ON Semiconductor	Trans GP BJT NPN 10V 0.07A 3-Pin MCP T/R - Tape and Reel (Alt: 55GN01MA-TL-E) RoHS: Compliant Min Qty: 9000 Container: Reel	Americas - 0	9000:$0.0457 15000:$0.0454 24000:$0.0449 45000:$0.0443 90000:$0.0432
55GN01MA-TL-E DISTI # 70465750	ON Semiconductor	ON Semi 55GN01MA-TL-E NPN RF Bipolar Transistor,0.07 A,10 V,3-Pin MCP RoHS: Compliant	0	100:$0.0840 250:$0.0790 500:$0.0750 1250:$0.0720
55GN01MA-TL-E	ON Semiconductor	RoHS: Not Compliant	3000	500:$0.0800 1000:$0.0800 25:$0.0900 100:$0.0900 1:$0.1000
55GN01MA-TL-E DISTI # 863-55GN01MA-TL-E	ON Semiconductor	Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G RoHS: Compliant	9000	1:$0.4500 10:$0.2910 100:$0.1250 1000:$0.0960 3000:$0.0730 9000:$0.0650 24000:$0.0610 45000:$0.0540 99000:$0.0520
55GN01MA-TL-E DISTI # 8009389P	ON Semiconductor	55GN01MA-TL-EBIP NPN 70MA 10V FT=5.5G, RL	8450	100:£0.1160 250:£0.1120 500:£0.1080 1000:£0.0910

영상	부분 #	설명
	Mfr.#: NSVF4020SG4T1G OMO.#: OMO-NSVF4020SG4T1G	RF Bipolar Transistors BIP NPN 150MA 8V FT=16G
	Mfr.#: NSVF5488SKT3G OMO.#: OMO-NSVF5488SKT3G	RF Bipolar Transistors BIP NPN 70MA 10V F
	Mfr.#: NSVF6003SB6T1G OMO.#: OMO-NSVF6003SB6T1G	RF Bipolar Transistors BIP NPN 0.15A 12V FT=7G
	Mfr.#: NSVF4017SG4T1G OMO.#: OMO-NSVF4017SG4T1G	RF Bipolar Transistors BIP NPN 100MA 12V FT=10G
	Mfr.#: UJ2-MIBH-4-SMT-TR OMO.#: OMO-UJ2-MIBH-4-SMT-TR	USB Connectors USB 2.0 micro B jack 5 pin Horizontal SMT
	Mfr.#: NSVF6003SB6T1G OMO.#: OMO-NSVF6003SB6T1G-ON-SEMICONDUCTOR	RF TRANS NPN 12V 7GHZ 6CPH
	Mfr.#: ER8-120P-0.8SV-5H OMO.#: OMO-ER8-120P-0-8SV-5H-HIROSE	120 Position High-Speed Transmission Plating Thickness 0.76 �m Straight Heade
	Mfr.#: UJ2-MIBH-4-SMT-TR OMO.#: OMO-UJ2-MIBH-4-SMT-TR-CUI	USB JACK 2.0, MICRO B TYPE, 5
	Mfr.#: BM23PF0.8-40DS-0.35V(895) OMO.#: OMO-BM23PF0-8-40DS-0-35V-895--HIROSE	신규 및 오리지널
	Mfr.#: NSVF4020SG4T1G OMO.#: OMO-NSVF4020SG4T1G-ON-SEMICONDUCTOR	RF TRANS NPN 8V 16GHZ SC82FL/MCP

55GN01MA-TL-E

Step1:Vacuum Packaging with PL

Step2:Anti-Static Bag

Step3:Packaging Boxes

Step1:
Vacuum Packaging with PL

Step2:
Anti-Static Bag

Step3:
Packaging Boxes